Et2Zn-mediated stoichiometric C(sp)-H silylation of 1-alkynes and chlorosilanes

A first example of an Et₂Zn mediated silylation of 1-aklynes is reported. A series of functional groups are tolerated in this reaction. Mechanistic studies support Zn alkynilides as intermediates in the reaction. This reaction protocol provides a practical method for the preparation of alkynylsilanes and expands the application of organometallic zinc in organic synthesis.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

光纤布拉格光栅的无源温度补偿

分析了通过施加应变补偿光纤布拉格光栅(FBG)中心波长随温度漂移的原理，给出了一种新型的无源温度补偿的方法和相应的实验结果。该方法采用了两种不同热膨胀系数的金属，对光栅先施加预应变。在0-60℃范围内，中心波长仅偏移了0．02nm。     

Al2O3陶瓷激光铣削试验研究

采用Nd∶YAG脉冲激光器对Al2 O3陶瓷进行铣削加工试验。系统研究了工艺参数对铣削量和铣削面质量的影响规律 ,并利用优化的铣削工艺对Al2 O3陶瓷进行多种形状的铣削加工。     

简化形式的系统EMC预测分析技术概述

本文探讨了系统级简化形式的电磁兼容性预测分析方法，该方法对于只有几对发-收干扰对的系统EMI的预测分析简洁有效，它避免了大系统间繁复的建模与大量的数据采集及其计算工作，从而对于只考虑其结果的系统间的EMC预测分析提高了效率。     

用CPLD实现SRAM工艺FPGA的安全应用

提出了一种利用CPLD产生的伪随机码来加密SRAM工艺FPGA的方法,并详细介绍了具体的电路和VHDL代码。     

半导体传感器在生物分析科学中的应用(英文)

回顾了半导体生化传感器 (ISFET 和 LA PS)在医学监测、免疫检测、免疫分析、D N A 杂交以及细胞培养等方面应用的进展。为使半导体器件适用于生化检测,对其中所采用的检测手段和取得的研究结果进行了分析。展望了通过与微流体网络相结合,基于半导体传感器的实验室芯片化的可行性。     

基于MFSK的多载波水声通信系统及实验研究

本文在深入研究水声通信信道特性及多载波关键技术的基础上,设计并研制了基于M FSK的高速自适应多载波水声通信系统,并进行了湖上实验。理论分析、仿真及湖上试验结果表明:基于M FSK的多载波水声通信系统,多径抑制有效,对同步的精确度要求不高,性能稳健,更适合于恶劣水声通信环境下、中距离(10~30km)较高数据率多载波通信系统,易于工程实现,具有良好的应用前景。     

Fast handoff with reducing waste rate approach for wireless resources management in UMTS mobile networks

3G Wideband CDMA systems adopt the Orthogonal Variable Spreading Factor code tree as the channelization codes management for achieving high data rate transmission in personal multimedia communications. It assigns a single channelization code for each accepted connection. Nevertheless, it wastes the system capacity when the required rate is not powers of two of the basic rate. One good solution is to assign multiple codes for each accepted connection but it causes two inevitable drawbacks: long handoff delay and new call setup delay due to high complexity of processing with multiple channelization codes, and high cost of using more number of rake combiners. Especially, long handoff delay may result in more call dropping probability and higher Grade of Service, which will degrade significantly the utilization and revenue of the 3G cellular systems. Therefore, we propose herein an adaptive efficient codes determination algorithm based on the Markov Decision Process analysis approach to reduce the waste rate and reassignments significantly while providing fast handoff. Numerical results demonstrate that the proposed approach yields several advantages, including the lowest GOS, the least waste rate, and the least number of reassignments. Meanwhile, the optimal number of rake combiners is also analyzed in this paper. This research was supported in part by the National Science Council of Taiwan, ROC, under contract NSC-93-2213-E-324-018.