Low density approximation for diffusion annealing

The problem of annealing of Frenkel-pairs in electron irradiated fee metals due to diffusion of interstitials is treated starting from exact equations for single particle densities, pair densities, etc. The mobile interstitials are considered to interact with vacancies (leading to recombination), impurity atoms (leading to interstitial-impurity complexes) and with each other (leading to interstitial clusters).

By using the superposition approximation, i.e. replacing three-particle probabilities by products of two-particle probabilities we obtain generalized Waite equations. For low defect densities the annealing is at different times governed by different processes. For short times the important process is the recombination of an interstitial with the near-by correlated vacancy generated by the same electron impact event, the so-called correlated recovery. For long times the remaining interstitials undergo long range migration and interact with uncorrelated sinks. During this process interstitial impurity complexes and interstitial clusters are formed.

The time dependence of the defect densities, the remaining fraction of defects after completion of diffusion annealing and the size distribution of interstitial clusters are calculated. Detailed comparison with experiments in Cu and Pt will be made.     

Optical Properties of Gamma Irradiated Soda-Lime Silicate Glasses Exchanged with Copper

The effect of copper ion exchange upon the optical absorption and room temperature gamma colouration of soda lime silicate glasses has been investigated. After ion exchange performed at 720 K, copper ions substitute mainly the alkali ions and do modify the optical absorption spectra of the specimens. It has been shown that gamma irradiation does not induce the formation of colloidal copper. Moreover, the colouration process itself is independent of the presence of copper ions. The generated colour centres are rather related to the presence of sodium and potassium ions. The optical bleaching by the UV light occurs in two stages. First disappear centres related to the Na-type defects and next those related to the K-type defects.     

Effect of hydrogen introduced by channelling implantation on the microstructures in silicon wafers

High-resolution transmission electron microscopy has been employed to study the platelet defects before annealing and the extended defects generated by annealing in the channelling-implanted silicon wafers. It has been found that there apparently appear platelet defects of quite great size and spacing at the maximum projected range of ions (R _max). Additionally, the cracks induced by annealing at 550 °C are generated around R _max instead of the average projected range of ions (R _p) as it is in the non-channelling-implanted samples. Moreover, after annealing at 1000 °C, cracks without branches and cavities arranging in a single array, different from the forked cracks and cavities arranged in several arrays in the non-channelling-implanted samples, are observed in the channelling-implanted silicon wafers. It is suggested that those special microstructure characteristics are ascribed to the channelling effect of implanted hydrogen ions.     

Extraction of intense beams from ECR ion sources and electrostatic acceleration

High-space charge effects and problems related to beam transport are discussed in the context of an electron cyclotron-resonance ion sources extraction and pre-acceleration low emittance line (which works as the injector of a new superconducting Radio Frequency Quadruple (RFQ) under commissioning at Laboratori Nazionali di Legnaro (LNL)) at several values of the extracted beam current. In the extractor, both the cases of short-range magnetic fringe field (virtual source approximation) and large-range fringe field are simulated. Analytical expression of ion flow and plasma sheaths are easily incorporated in the charged fluid approach and in numerical modeling with three-dimensional simulation programs, which can treat several coupled field variables and lower space dimension (known as multiphysics codes). Advantages of flexibility and of representation of finer details are remarked. Effects of plasma potential and extraction hole thickness (0.5 mm) on the plasma meniscus can be resolved, even in the context of a simulation including 1 m long objects. An example of beam injection into an acceleration tube is also given; results are consistent with the tube-design goals and with the experimentally observed parameters.     

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EAST NBI束线综合测试台已研制完成并具备一台兆瓦级离子源测试运行的全套电源设备,包括离子源灯丝电源、弧电源、加速器电源、抑制极电源、偏转磁体电源及缓冲器电源等。介绍了EAST兆瓦级离子源进行起弧放电调试运行的方式,叙述了各套离子源电源系统的设计结构、技术特点及运行控制方式,分析了离子源电源系统稳定可靠运行需要解决的各个难点,给出了EAST束线样机进行高功率及长脉冲束引出测试运行的实验结果。     

Stabilization of organic thin film transistors by ion implantation

We report on the effects of low energy ion implantation (N and Ne) in the reduction and control of the degradation of pentacene organic thin film transistors (OTFTs) due to the exposure to atmosphere (i.e. oxygen and water). We have observed that a controlled damage depth distribution preserves the functionality of the devices, even if ion implantation induces significant molecular structure modifications, in particular a combination of dehydrogenation and carbonification effects. No relevant changes in the pentacene thin film thickness have been observed. The two major transport parameters that characterize OTFT performance are the carrier mobility and the threshold voltage. We have monitored the effectiveness of this process in stabilizing the device by monitoring the carrier mobility and the threshold voltage over a long time (over 2000 h). Finally, we have assessed by depth resolved X-ray Photoemission Spectroscopy analyses that, by selectively implanting with ions that can react with the hydrocarbon matrix (e.g. N⁺), it is possible to locally modify the charge distribution within the organic layer.     

纯锆上离子注入钇和镧后的表面分析

用金属蒸汽真空弧源，以40kV加速电压对纯锆样品分别进行了10¹⁶—10¹⁷/cm²的钇、镧离子注入，注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明，注入的钇以Y₂O₃形式存在，镧以La₂O₃形式存在.俄歇电子能谱表明，纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加，当离子注入剂量达到10¹⁷/cm²时，氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm，同时直接观察到当离子注入剂量为(La+Y)10¹⁷/cm²时，纯锆样品表面发生了严重的溅射. 关键词： 纯锆 钇和镧离子共注入 卢瑟福背散射 x射线光电子能谱     

Br2+分子离子[1+1]双光子解离动力学

本文利用最近研制的低温离子阱-离子速度成像谱仪在冷离子束中研究了同位素质量分辨的⁷⁹Br₂⁺分子离子的[1+1]双光子激光解离动力学. 借助其1⁴Σ^-_u,3/2态为中间态使⁷⁹Br₂⁺共振吸收两个光子至4∽5 eV区域的高激发态并发生解离. 利用离子速度成像技术获得了光解产物⁷⁹Br⁺的二维速度分布和平动能释放谱. 通过平动能释放谱确定了不同解离能量处量子态分辨的解离产物通道分支比. 光碎片产物的角分布表明⁷⁹Br₂⁺分子离子的双光子解离是1⁴Σ^-_u,3/2态的ΔΩ=0平行跃迁至一个Ω=3/2高解离态发生的. 由于分子激发态中的强自旋-轨道耦合作用,高激发的四重态很可能参与到实验观测的光解过程.     

高温注氦及随后230MeV的208Pb27+辐照Al2O3的光致发光谱的研究

主要研究了110keV的He⁺高温注入Al₂O₃单晶及1.1MeV/u的²⁰⁸Pb²⁷⁺辐照注氦Al₂O₃样品的光致发光的特性. 从测试结果可以清楚地看到在375nm, 413nm和450nm处出现了强烈的发光峰. 并且在600K, 5×10sup>16ions/cm²剂量点, 样品的发光峰是最强的. 这 表明He⁺注入Al₂O₃后使带隙中深的辐射中心复合的效率大幅度提高, 极大的增强了其发光强度,而且发光伴随着蓝移现象. 而经过高能²⁰⁸Pb²⁷⁺辐照后的样品, 在390nm出现了新的发光峰,从FTIR谱中我们能够看到, 可能是²⁰⁸Pb²⁷⁺辐照相对沉积膜出现一定的晶化, 其中含有许多纳米尺寸的Al₂O₃晶粒所致.     

流动注射在线离子交换柱富集-火焰原子吸收光谱法测定钨矿中的铜、锌和铅

建立了流动注射在线离子交换柱富集-火焰原子吸收光谱法测定钨矿中的铜、锌和铅的方法,样品经盐酸和硝酸分解后,加入5%宁可辛溶液使样品中大量的钨呈钨酸析出,样品中一般的伴生元素都可形成可溶性化合物与钨酸分离,之后采用流动注射在线富集与原子吸收联用技术,分别加入浓度依次递增的3种元素的标准溶液,用空气-乙炔火焰原子吸收连续测定Cu、Zn和Pb的含量。建立了优化的仪器工作条件,并对可能存在的元素进行干扰试验。方法检出限Cu为0.001μg/mL、Zn为0.001μg/mL、Pb为0.01μg/mL,相对标准偏差Cu为2.7%、Zn为3.6%、Pb为1.9%,加标回收率为96%—106%。