用迈克耳逊干涉仪测量气体折射率的误差的研究

研究在用迈克尔逊干涉仪测量气体折射率时存在的系统和方法误差，提出了误差修正方法。     

透红外大尺寸氧氟化物玻璃研究

锗酸盐和氟铝酸盐透红外玻璃材料作为窗口或头罩材料具有广泛的应用前景。结合锗酸盐玻璃含有少量水的问题，在成分中引入氟化物，实验表明：随氟化物含量增加．玻璃中羟基含量逐渐降低。同时通过对熔制温度的调整，获得了不合羟基的红外玻璃。针对氟铝酸盐玻璃在冷却过程中易析晶的问题，在氟化物组分中加入少量重金属氧化物TeO2，得到析晶性能好的氧氟铝酸盐玻璃。同时给出了两类红外材料的一些物理、化学性质。     

Unsaturated bond existing in tetrafluoroethylene-propylene-vinylidene fluoride terpolymer

Infrared and nuclear magnetic resonance (NMR) spectroscopies have been applied for quantitative comparison on unsaturated bonds in tetrafluoroethylene (TFE)-propylene (P)-vinylidene fluoride (VdF) terpolymers. These spectroscopies have led to consistent results while they are based on completely different principles. It is shown that the absolute concentration can be evaluated from NMR measurements. The behavior of unsaturation has been discussed in terms of after-treatment such as wet and dry treatments. The result obtained here can give the important information to improve the performance of fluoroelastomer based on TFE-P-VdF terpolymers.     

增长曲线模型中回归系数的广义根方估计

本文对增长曲线模型中的回归系数B提出了一种新的估计形式－广义根方估计的B（K），其中K＝diag(k1,k2,…，kp）并证明了通过广义根方偏参数ki(i=1,2,…，p）的适当选取可使得该估计在均方误差矩阵的意义下优于已有的LS估计和根方估计，及广义根方估计是可容许估计，本文还给出了选取广义根方偏参数的两种方法，算法及一个应用实例。     

红外单站被动定位技术速度更新算法研究

针对红外单站被动定位技术中空中机动目标的运动速度不断变化这一实际情况,提出了一种基于红外相机运动特性的对目标的运动速度进行实时更新的校正算法.该算法克服了大多基于匀速直线运动这一空间模型的红外单站被动定位方案目标速度不变的缺点,客观地反映了空中机动目标的实际运动状况,不仅能对目标的运动速度进行实时准确的更新校正,而且可推演出一种新的红外单站被动定位算法,对推动红外单站被动定位技术的工程实用化进程具有重要的意义.     

加速牛顿迭代收敛的新方法

提出了加速牛顿迭代收敛的新思想，构造出一类加权牛顿迭代格式，通过选取最优加权因子，使得该格式具有高阶收敛性和较小的渐近误差常数。     

High-resolution infrared spectra of NCCN and NCCN

High-resolution spectra of ¹⁵N¹²C¹²C¹⁵N and ¹⁴N¹³C¹³C¹⁴N have been measured and analyzed from 200 to 3600 cm⁻¹. All the vibrational levels below 900 cm⁻¹ have been observed and characterized. The Fermi resonance between ν₂ and 2ν₄ has been studied and the resonance constant has been determined for several cases. Several Σ⁻ states have been directly observed for the first time for each isotopomer, the (0001111)0f, (0011111)0f, and (0002222)0f states. The pattern of the energy levels for clusters of l-type resonance coupled levels, such as 0001131,3, has been determined for cyanogen for the first time. Among other things this involved the determination of the vibrational l-type resonance constant, r₄₅. Many of the power series constants, α_i and x_ij, and higher order constants have been determined.     

Tunable narrow-band infrared emitters from hexagonal lattices

In this work, we present both the theoretical basis as well as supporting experimental measurements for development of a novel mid-infrared thermally stimulated narrow band emitter with a spectral bandwidth of less than 10%. To achieve this, we utilize a metallized-surface 2D photonic crystal of air voids in a silicon background with hexagonal structure symmetry. Our results are based on the generation of discrete surface plasmon (SP) modes in the thin metallized layer residing on the top surface. This yields a series of adequately spaced discrete peaks in the reflection spectrum, dominated by a single sharp feature corresponding to the lowest plasmon order, in an otherwise uniform highly reflective spectrum (>90%) over most of the IR spectrum. This, in turn, gives rise to a sharp absorption feature with a correspondingly narrow thermal emission peak in the emission spectrum. Transfer matrix calculations simulate well both the position and strengths of the absorption peaks. By altering the period of the surface photonic lattice, the SP peak and emissive band can be tuned to the desired wavelength. These devices promise a new class of tunable infrared emitters with high power in a narrow spectral bandwidth. Such narrow band sources are critical to achieving high efficiency gas sensors.     

时间分辨红外发射光谱法对自由基反应的研究

在过去的 15年中 ,傅立叶变换红外发射光谱法广泛应用于研究气相自由基反应 .Sloan首先研究了O(1D)的反应 ,随后Leone和Hancock研究了O(3 P)的反应 .此后 ,孔繁敖和朱起鹤等研究了小自由基 ,包括CH、CH2 、CH3 、C2 H3 、C2 H5、C2 H、C3 H3 和C3 H5与O2 、NO、N2 O、NO2 等分子的反应。在红外光谱中观察到各个反应的初生产物和初步反应通道 ,和从头算的理论研究结合起来 ,这些反应的机理已基本弄清 .     

UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE

The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind