辐射加热金X光再发射时间测量

利用星光Ⅱ三倍频激光打双盘靶，研究了辐射加热材料的Ｘ光发射时间。激光脉冲能量４０～６０Ｊ、脉冲宽度６００～７００ｐｓ。通过两台时间关联的亚千Ｘ光能谱仪分别监测双盘靶初、次级发射Ｘ光谱，给出了辐射加热次级Ｘ光再发射时间。     

一种简易云雾室的制作

本文利用自制云雾室把微观粒子的运动转化为宏观现象，从而供实验观察和研究。     

Influence of radiation on thin ZnS-Tb films

Changes in thin zinc-sulfide films under the action of the γ-radiation of Co⁶⁰ are studied by investigating electroluminescence spectra of terbium embedded in these films as a luminescent probe. It is shown that changes in the relation of the intensities of bands, a decrease in their halfwidth and the background component, and simplification of the spectrum are observed in a short-wave region of the Tb radiation spectrum that corresponds to⁵D₃→⁷F_j transitions. The same modification of the radiation spectrum is characteristic of ZnS films whose crystalline structure is ordered in the course of thermal annealing at a temperature of 350°C. Based on the analysis of the data obtained it is inferred that irradiating the ZnS films with small radiation doses of 10⁴–10⁵ rad leads to the ordering of their crystalline structure due to the elimination of one of the types of structural defects. Institute of Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauka Ave., Kiev-28, 252650. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 338–341, May–June, 1997.     

Investigation and optimization of the covering power and coloristic properties of paint coatings of complex composition

A method for finding the optimum sizes of pigment particles, their volume concentration, and the paint coating thickness that provide the covering power and the required coloristic characteristics of reflected light for the minimum flow rate of pigments is based on using a four-flow approximation of the solution to the equation of radiation transfer in dispersion media and is extended to coatings of complex composition. The capabilities of the method are demonstrated by examples of coatings of mixtures of hematite and rutile particles in a binder with n=1.5 for variations of the modal size and the half-width of the size distribution of the pigment particles. B. I. Stepanov Institute of Physics, Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 90–96, January–February, 1997.     

Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes

Measurements of 77K R_oA and 300K reverse bias dynamic impedance (R_dA) products at one volt reverse bias has been carried out to assess the degree of correlation of this figure of merit. Planar P-on-n heterostructures were grown on near lattice-matched CdZnTe substrates with Hg_1-xCd_xTe (0.20< x <0.30) by molecular beam epitaxy. These devices were passivated with CdTe and doped with indium and arsenic as n- and p-type dopants, respectively. Current-voltage characteristic of these devices exhibit thermally generated dark currents at small and modest reverse bias. We have observed that R_oA values of these long wavelength infrared P-on-n heterostructure photodiodes at 77K correlate with room temperature R_dA values. Diode arrays with high room temperature R_dA values at one volt reverse bias also have high R_oA values at 77K. Similarly, low R_dA values at room temperature indicate poor performance at 77K where deviation from diffusion current occurs at reverse bias of 0.2 to 1 volt at room temperature. The results presented here, for a small samples of devices, demonstrate that room temperature measurements of current-voltage characteristics to evaluate Hg_1-xCd_xTe (0.22< x <0.28) diode performance and array uniformity at lower temperatures can be used. This provides an acceptable criteria for further study at lower temperatures.     

Resonance method for IR sensing

A highly sensitive method for infrared radiation detection based on thermal resonance in an active bolometer is set forth. An active bolometer is a self-oscillating system consisting of an IR-sensitive cell in a feedback circuit of an adjustable proportional controller. The analysis of an active bolometer autonomous (dark) dynamics reveals that with a generalized gain factor A variation the system evolves from relaxation type towards oscillating and self-oscillating type. When A=A_c, where A_c is a critical value of the generalized gain factor A, the steady state loses stability through self-excited thermal oscillations. The resonance in a system weakly perturbed by IR radiation modulated at self-oscillation frequency q₀[1+exp(iω_ct)] is considered. It is shown that in a small precritical vicinity =(A−A_c)/A_c of the gain factor the amplitude of forced thermal oscillations is proportional to q₀/A_c. The D^* calculation reveals that the detection power of a passive (A=0) bolometer increases with feedback introduction by a factor of 1/||. The detection powers of feasible versions of an active bolometer are compared.     

红外化学遥感数字信号处理算法的研究进展

介绍了几种为远距离红外蒸汽信号监测开发的分类器设计，频域数字滤波，时域数字滤波等数字信号处理技术。对线性分类器，分段线性分类器和神经网络分类器等在红外化学遥感系统中的应用做了初步的探讨。对背景扣除技术，频域数字滤波技术，数字滤波的切趾方法等做了简要的描述。阐述了时域滤波技术的基本原理及实际应用。展望了红外化学遥感数字信号处理算法的研究前景。     

一种辐射源距离的估算方法

提出利用测量设备与辐射源相对运动速度及测量设备所接收到的辐射功率的估算测量设备到辐射源距离的一种方法。对计算精度进行了分析，通过算例对理论分析进行了检验。     

双波段成象及融合技术研究

概括地分析了双波段成象技术的发展概况，分析了成象技术的基本原理，提出了红外双波段基本方案和涉及的关键技术，分析和计算了系统的基本性能。最后，讨论了双波段及融合技术，认为在双波段实现融合应以自主式结构为主。     

几种新型的光电器件

描述用ＳＯＩ技术制造的光耦合ＭＯＳ继电器和多量子阱长波和红外探测器，以及集成异质结晶体管和激光二管于一体的高增益，高灵敏的光电子开关器件，文中着重介绍这些器件的结构，制造工和器件特性，并对其进行了讨论。