自适应RBF神经网络在CDMA移动通信上行链路功率控制中的应用研究

提出了一种自适应RBF神经网络功率控制方案。详细研究了该网络在DS-CDMA通信中，进行上行链路闭环功率控制(基于信扰比(SIR))的应用理论，给出了该网络参数的计算方法。最后用计算机仿真法模拟出该控制器的运行性能。结果表明基于SIR的自适应RBF神经网络功率控制器能自适应地调整移动台的发射功率，使基站接收信号的信扰比始终非常接近于一个常数，且有比定步长功率控制更小的SIR跟踪误差，从而可以降低接收信号的中断概率、提高信道容量。     

Effect of Deborah number and phase difference on peristaltic transport of a third-order fluid in an asymmetric channel

The effect of a third-order fluid on the peristaltic transport in an asymmetric channel is studied. The wavelength of the peristaltic waves is assumed to be large compared to the varying channel width, whereas the wave amplitudes need not be small compared to the varying channel width. The channel asymmetry is produced by choosing the peristaltic wave train on the walls to have different amplitudes and phase. The flow is investigated in a wave frame of reference moving with velocity of the wave. The effects of Deborah number, phase difference, varying channel width and wave amplitudes on the pumping characteristics, streamline pattern and trapping phenomena are investigated. It is observed that the trapping regions increase as the channel becomes more and more symmetric and the trapped bolus volume decreases for increasing Deborah number, phase difference and varying channel width whereas it increases for increasing flow rate and wave amplitudes. Furthermore, the obtained results could also have applications to a range of peristaltic flows for a variety of non-Newtonian fluids such as aqueous solutions of high-molecular weight polyethylene oxide and polyacrylamide.     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

关于超立方体网络的容错路径选择

文章给出ｎ－维超立方体网络的容错路径选择算法，该算法具有自适应性，可以防止死锁和活锁现象的发生，应用该算法，可求出一条基于安全优先策略的可行最短路径。     

单片InGaAs／InP PIN PD阵列

文章简要地介绍了ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ ＰＤ阵列的制作现状及其应用和发展趋势。     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

CDMA时变色散信道的两级盲辨识算法

本文通过对时变信道的扩展函数在时频域进行正则采样，得到了CDMA时变系统的离散正则模型。针对该模型提出了一种具有较低运算量的两级盲辨识算法。为避免两级算法产生的误差传播效应，文章将理想SIMO模型等效为加性噪声模型来处理。与基展开模型方法相比，该算法具有不需利用观测数据的高阶统计量估计展开基频率的优点。文章通过仿真验证了该算法是可行的。     

有扰对称信道平均信息量的计算

照相手机让诺基亚抢了风头，这真是亚洲人的失策。在日本和韩国，内置摄像头的手机早就不是什么值得炫耀的东西了。不过日本人的动作还是很快的，GD88和N8一副后来居上的架势，让人不敢小瞧。     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

MIMO扩频通信系统矩阵信道估计

为了解决第三代移动通信系统下行链路容量瓶颈问题，在HSDPA的解决方案中，MIMO系统的提案越来越受到重视。本文提出了一种移动深衰落环境下的MIMO系统信道估计方案，并进行了详细的理论推导，给出了独立MIMO深衰落信道环境下的仿真结果。