脉冲激光诱导Zn/InP掺杂过程中温度分布的解析计算

在实验的基础上 ,分析脉冲激光诱导半导体InP掺杂Zn过程 ,利用简化的一维模型 ,在第三类边界条件下 ,给出一种较直观的脉冲激光辐照有限厚双层材料Zn/InP的温度分布解析形式     

基于InGaAsP/InP材料的二维半导体光子晶体激光器

描述了基于InGaAsP/InP材料的二维半导体光子晶体激光器的研究.主要介绍点缺陷型光子晶体激光器的理论设计、模拟分析及与器件性能的比较.理论上采用平面波展开法和有限时域查分法,预言了通过采用调整点缺陷腔的最近临空气孔的尺寸,可以提高缺陷腔的品质因子Q,从而提高激光器的工作性能,激光器的激射阈值;研制了不同近邻孔径尺寸的激光器,试验结果与理论模拟相一致.     

毫米波测云雷达回波信号衰减补偿仿真研究

针对毫米波测云雷达受云雨衰减的问题,从雷达I、Q信号角度出发,模拟毫米波测云雷达回波I、Q信号并假设一定的探测环境,进行雷达回波信号衰减补偿仿真试验.试验结果表明,雷达电磁波信号穿过雨区和云区时,在远距离处衰减量很大,通过衰减补偿,信号强度明显增强,目标信号突出.     

一种改进的InP HBT小信号模型的直接提取法

提出了一种改进的直接提取方法来提取InP HBT小信号等效电路中的模型参数,并将其成功地应用InP异质结双极晶体管（HBT）小信号等效电路。在所采用的模型中考虑了分布式基极-集电极电容效应。与其他直接参数提取方法相比,该方法从外围寄生元件到内部本征元件依次进行参数提取,提取过程较为清晰。除寄生参数外,其余所有的参数计算均未经过任何简化近似。该方法依赖于S参数的测量,所有等效电路参数直接从S参数数据中提取,而无需任何基于初始值的近似。在0.1 ~ 40 GHz的频率范围内,直接提取法在InP HBT上得到了成功的验证,并在整个频率范围内得到了较好的测量结果与计算结果的一致性。     

Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

We investigated the influence of the growth rate on the quality of zero-net-strained InGaAsP/InGaAsP/InP multiquantum well structures for 1.55 μm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive strained wells (ɛ=+1%) and tensile strained barriers (ɛ=−0.5%) grown with different quaternary bandgap wavelengths (λ_B=1.1–1.4 μm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction, photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap. A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and ridge waveguide lasers with 10 wells exhibited low losses (34 cm⁻¹) and low threshold current densities at infinite cavity length (1020 A·cm⁻² and 1190 A·cm⁻², respectively).     

基于InP衬底的GaAsSb/InP异质结晶体管

采用金属有机化学气相沉积生长了InP/GaAs0.5Sb0.5/InP 双异质结晶体三极管(DHBT)材料,研究了材料质量对器件性能的影响.制备的器件不但具有非常好的直流特性,而且还表现出良好的微波特性,其结果与能带理论的预言一致,DHBT集电结和发射结的电流理想因子分别为1.00和1.06,击穿电压高达15V,电流放大增益截止频率超过100GHz.     

Galvanomagnetic properties of two-dimensional electron gases in strain relaxed InxGa1−xAs(x<0.40) heterostructures grown by molecular beam epitaxy on GaAs substrates

We have investigated, as a function of indium content x, the galvanomagnetic and Shubnikov de Haas (SdH) properties of two-dimensional electron gases (2DEG) formed at lattice matched, strain relaxed InAlAs/InGaAs heterojunctions. These were grown by molecular beam epitaxy on GaAs misoriented substrates with a two degree offcut toward the nearest (110) plane. Variable temperature resistivity and Hall measurements indicate an increase in the electron sheet density n_s from 0.78×10¹²cm⁻² for x=0.15 to 1.80×10¹² cm⁻² for x=0.40 at 300K, and from 0.75×10¹²cm⁻² to 1.67×10¹²cm⁻² at T=1.6K. The room temperature electron mobility, measured along the in plane [110], direction is independent of indium content and equals approximately 9500 cm²/Vs. For T<50K, the mobility is independent of temperature decreasing with increasing x from 82000 cm²/Vs for x=0.15 to 33000 cm²/Vs for x=0.40. The ratios (τ_t/τ_q) at 1.6K between the electron relaxation time τ_t and the single particle relaxation time τq, for the strain relaxed specimens, as well as for pseudomorphically strained Al_0.35Ga_0.65As/In_0.15Ga_0.85As structures grown on GaAs substrates, and In_0.52Al_0.48As/In_0.53Ga_0.47As heterostructures grown lattice matched on InP substrates. Such a study indicates the presence of inhomogeneities in the 2DEGs of the strain relaxed specimens which appear to be related to the process of strain relaxation. Such inhomogeneities, however, have little effect on the electron relaxation time τ_t which, at low temperatures, is limited principally by alloy scattering.     

Optical and photocatalytic properties of indium phosphide nanoneedles and nanotubes

Large scale indium phosphide (InP) nanoneedles and nanotubes were synthesized through a facile solvothermal reaction. The morphology and microstructure of the samples were analyzed by employing scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and Ultraviolet-visible (UV–vis) spectroscopy. The room temperature photoluminescence (PL) measurements showed that the InP nanoneedles and nanotubes possessed a pronounced blue shift in contrast to the bulk counterpart, which was ascribed to the crystalline defects effect. Moreover, the InP nanotubes exhibited an enhanced photocatalytic performance as compared to the InP nanoneedles and nanoparticles.     

The effects of thermal annealing on the electrical characteristics of Au/n–InP/In diode

An Au/n–InP/In diode has been fabricated in the laboratory conditions and the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the diode have been measured in room temperature. In order to observe the effect of the thermal annealing, this diode has been annealed at temperatures 100 and 200 °C for 3 min in N₂ atmosphere. The characteristic parameters such as leakage current, barrier height and ideality factor of this diode have been calculated from the forward bias I–V and reverse bias C–V characteristics as a function of annealing temperature. Also the rectifying ratio of the diode is evaluated for as-deposited and annealed diode.