Prototype electrochromic device and dye sensitized solar cell using spray deposited undoped and ‘Li’ doped V2O5 thin film electrodes

Lithium (Li) (0–5 wt%) doped V₂O₅ thin films were spray deposited at 450 °C onto ITO substrates. Structural analysis using X-ray diffraction and Raman spectroscopy revealed orthorhombic phase of the films. In addition to the V₂O₅ phase, presence of VO₂ peaks due to high deposition temperature is also evident from structural and optical characterization. The non-stoichiometric nature of the films due to loss of the terminal O atom was confirmed from Raman spectroscopy. The direct band gap, indirect bandgap, and phonon energies were also calculated from optical studies. Different charge states of vanadium ions present in the film were identified from X-ray photoelectron spectroscopy study. Results from cyclic voltammetry experiments reflected significant differences between the undoped and Li doped V₂O₅ samples. Transport properties by Hall-effect measured at room temperature indicated significant increase in conductivity, carrier concentration and mobility of V₂O₅ thin films on doping with Li. A Dye Sensitized Solar Cell (DSSC) was fabricated using mobility enhanced 5 wt% Li doped V₂O₅ film as photoanode and its efficiency was found to be 2.7%. A simple electrochromic cell is fabricated using undoped V₂O₅ thin film to demonstrate the colour change.     

Microwave absorbing properties of Fe3O4–poly(3, 4‐ethylenedioxythiophene) hybrids in low‐frequency band

A facile method is proposed to obtain microwave absorbing materials (MAMs), which possess strong microwave absorption properties in low‐frequency range. By simply mechanical mixing, the obtained Fe₃O₄–poly (3,4‐ethylenedioxythiophene) (PEDOT) hybrids exhibit more excellent microwave absorbing properties than that of Fe₃O₄ or PEDOT individually. The analysis on the microwave absorbing properties of the Fe₃O₄–PEDOT hybrids indicates that the excellent microwave absorbing properties are ascribed to several factors, like the dielectric loss, the interface polarization, eddy current effect, natural ferromagnetic resonance, and the impedance as well as the thickness of the coating. The Fe₃O₄–PEDOT hybrids with appropriate mass ratios of PEDOT to Fe₃O₄ (represented by (PEDOT)/(Fe₃O₄)) show superior microwave absorbing property at low frequency. When the thickness is 4 mm, the reflection loss of the sample reached ?15.8 dB at 3.2 GHz with (PEDOT)/(Fe₃O₄) of 3 and ?31.4 dB at 4.5 GHz with (PEDOT)/(Fe₃O₄) of 2, respectively. The obtained Fe₃O₄–PEDOT MAMs will have a promising application in the practical industry and commerce affairs. Copyright © 2013 John Wiley & Sons, Ltd.     

Probing the Zintl–Klemm Concept: A Combined Experimental and Theoretical Charge Density Study of the Zintl Phase CaSi

The nature of the chemical bonds in CaSi, a textbook example of a Zintl phase, was investigated for the first time by means of a combined experimental and theoretical charge density analysis to test the validity of the Zintl–Klemm concept. The presence of covalent Si? Si interactions, which were shown by QTAIM analysis, supports this fundamental bonding concept. However, the use of an experimental charge density study and theoretical band structure analyses give clear evidence that the cation–anion interaction cannot be described as purely ionic, but also has partially covalent character. Integrated QTAIM atomic charges of the atoms contradict the original Zintl–Klemm concept and deliver a possible explanation for the unexpected metallic behavior of CaSi.     

Band‐Gap Manipulations of Monolayer Graphene by Phenyl Radical Adsorptions: A Density Functional Theory Study

Phenyl radical (Ph^.) adsorption on monolayer graphene sheets is used to investigate the band‐gap manipulation of graphene through density functional theory. Adsorption of a single Ph^. on graphene breaks the aromatic π‐bond and generates an unpaired electron, which is delocalized to the ortho or para position. Adsorption of a second radical at the ortho or para position saturates the radical by electron pairing and results in semiconducting graphene. Adsorption of a second radical at the ortho position (ortho–ortho pairing) is found to be more favorable than adsorption at the para position (ortho–para pairing), and the ortho–ortho pairing has stronger effects on band‐gap opening compared with ortho–para pairing. Adsorption of even numbers of Ph^. on graphene by ortho–ortho and ortho–para pairings, in general, increases the band gap. Our study shows promise of band‐gap manipulation in monolayer graphene by Ph^. adsorption, leading to potential wider applications of graphene.     

Opening Band Gap of Graphene by Chemical Doping: a First Principles Study

Single atom chemically doped graphene has been theoretically studied by density functional theory. The largest band gap, 0.62 eV, appears in arsenic atom doped graphene, then 0.60 eV comes by the tin atom, whose deformations can neither be ignored. It is also found that oxygen and iron single atom embedded graphene can open band gap by 0.52 and 0.54 eV, respectively. Moreover, doping O atom shows little distortion and high stability by charge redistribution. The band gap of Fe doped graphene is opened by orbital hybridization. The other heteroatom doped results are a little inferior to them.     

The electronic band structure analysis of OLED device by means of in situ LEIPS and UPS combined with GCIB

Low-energy inverse photoelectron spectroscopy (LEIPS) and ultraviolet photoelectron spectroscopy (UPS) incorporated into the multitechnique XPS system were used to probe the ionization potential and the electron affinity of organic materials, respectively. By utilizing gas cluster ion beam (GCIB), in situ analyses and depth profiling of LEIPS and UPS were also demonstrated. The band structures of the 10-nm-thick buckminsterfullerene (C₆₀) thin film on Au (100 nm)/indium tin oxide (100 nm)/glass substrate were successfully evaluated in depth direction.     

5G NR FDD与WCDMA系统共存研究

为推动5G在中频段的重耕,研究了中频段NR FDD系统与WCDMA系统在相同地理区域邻频共存时的系统间干扰造成的性能损失,分析了在不同功率参数、不同拓扑结构、AAS/NON-AAS 2种天线模型下,4个干扰场景的仿真结果.最后给出NR FDD系统与WCDMA系统共存建议以及共存措施.     

一类幂等半环的性质和结构

研究了加法半群为半格的半环类S+l中的乘法带半环和矩形带半环类BR中的乘法带半环;给出了ID半环中乘法带半环的结构定理,即ID∩.■°D=.■z∨.■z∨D.     

单轴拉伸下氧化锆纳米柱相变机理的分子动力学研究

通过分子动力学模拟,观察到[001]取向的四方氧化锆纳米柱在拉伸载荷下具有两个线弹性变形的应力-应变关系.这一现象是四方结构向单斜结构相变的结果 .为了进一步阐明应力-应变曲线,进行了包括晶体结构分析和原子应变计算在内的详细研究.晶格取向强烈影响塑性变形机制,即[001]和[111]取向的纳米柱在拉伸载荷下经历相变,而沿[110]取向的纳米柱导致脆性断裂.观察到显著的温度效应,随着温度从300K升高到1500K,弹性模量从573.45GPa线性降低到482.65GPa.此外,还用轻推弹性带(NEB)理论估算了相变能垒,观察到相变能垒随温度的升高而降低.这一工作将有助于加深对氧化锆的四方相到单斜相转变和纳米尺度力学行为的理解.