潜望式红外夜视瞄准镜的研制

介绍了潜望式红外夜视瞄准系统的工作原理和研制方案.该系统兼具了潜望瞄准镜和红外热像仪的功能.从探测器外围电路,信号处理系统、潜望式红外光学系统的设计以及移动焦平面整体电动调焦技术等几个方面分析了潜望式红外夜视瞄准系统研制过程中存在的关键技术.最后对基于此方案所研制出的海军红外夜视瞄准镜应用情况做了简要报告.     

低成本红外目标源远程投放控制器设计

针对空空导弹飞行试验地面靶试的需求,提出一种基于GSM通讯网络的远程红外目标源投放控制器设计方案,采用单片机实现GSM模块的传输控制以及控制命令的解析执行,通过华为GTM900模块实现数据的无线传输,此系统具有低功耗、通讯可靠、成本低的优势。     

红外序列图像运动小目标检测算法

利用红外序列图像小目标运动的连续性进行背景恢复,滤除背景以提高信噪比,在门限检测后对图像进行边缘滤波以进一步提高检测概率,最后再一次运用目标的运动特性确认目标,减小虚警率,从而有效地检测出目标.实验结果证明,这种算法检测率高,而且计算简单,易于硬件实现.     

水面舰艇目标红外隐身技术

随着红外探测技术和红外制导技术的迅速发展,水面舰艇面临越来越严重的红外威胁.本文在概述红外隐身技术原理的基础上,通过对水面舰艇红外隐身技术发展现状的分析,介绍了水面舰艇红外隐身技术所采取的措施,最后对水面舰艇红外隐身技术的发展趋势进行了预测.     

High Performance Millimeter‐Wave Image Reject Low‐Noise Amplifier Using Inter‐stage Tunable Resonators

A Q‐band pHEMT image‐rejection low‐noise amplifier (IR‐LNA) is presented using inter‐stage tunable resonators. The inter‐stage L‐C resonators can maximize an image rejection by functioning as inter‐stage matching circuits at an operating frequency (F_OP) and short circuits at an image frequency (F_IM). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L‐C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR‐LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and F_IM/F_OP of the reported millimeter/quasi‐millimeter wave IR‐LNAs.     

基于80C196MC的单极性SPWM的实现

研究了利用80C196MC单片机的波形发生器和一定的外围电路产生单极性SPWM(正弦脉宽调制)信号的方法。利用IR2130驱动器作为栅极驱动器,驱动用IGBT(绝缘栅双极晶体管)组成的单相H桥。对比了单极性SPWM相对于双极性SPWM的优点,阐述了其实现的基本原理,给出了具体的主电路和控制电路及程序实现的流程,分析了IR2130应用中的具体问题,最后给出了一种简单的减小过零点失真的方法。     

Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors

We report the Schottky performance and thermal reliability of a wide bandgap InGaP layer in contact with a Cu/Au metallic system. An effective Schottky barrier height of 0.97 eV and an ideality factor of 1.21 can be achieved. The thermal reliability of the resultant Schottky barrier diodes was analyzed using Auger electron spectroscopy and atomic force microscopy. The thermal reliability could be main tained up to 450°C. The failure mechanism was attributable to the decomposition of the InGaP layer and the interdiffusion of the chemical elements at higher temperature. Insensitive photoresponsivity with the in cident optical power was found for the resultant Au/Cu-metal-semiconductor-metalphotodetectors (MSM-PDs). According to the measured temporal response of the Au/Cu-MSM-PDs, the operation frequency could be above 10 GHz.     

机载红外搜索跟踪技术研究

文中介绍了红外搜索和跟踪系统的主要子系统,其中包括瞄准与稳定子系统、热成像子系统和图像跟踪处理子系统。     

Ultra-Stable and Sensitive Ultraviolet Photodetectors Based on Monocrystalline Perovskite Thin Films

The detection of ultraviolet (UV) radiation with effective performance and robust stability is essential to practical applications. Metal halide single-crystal perovskites (ABX₃) are promising next-generation materials for UV detection. The device performance of all-inorganic CsPbCl₃ photodetectors (PDs) is still limited by inner imperfection of crystals grown in solution. Here wafer-scale single-crystal CsPbCl₃ thin films are successfully grown by vapor-phase epitaxy method, and the as-constructed PDs under UV light illumination exhibit an ultralow dark current of 7.18 pA, ultrahigh ON/OFF ratio of ≈5.22 × 10⁵, competitive responsivity of 32.8 A W⁻¹, external quantum efficiency of 10867% and specific detectivity of 4.22 × 10¹² Jones. More importantly, they feature superb long-term stability toward moisture and oxygen within twenty-one months, good temperature tolerances at low and high temperatures. The ability of the photodetector arrays for excellent UV light imaging is further demonstrated.     

InSb/InAsSb Strained Layer Superlattice Grown by MBE

叙述了采用国产 MBE 装置,在 GaAs 或 InSb 衬底上生长 InSb,InAsSb薄膜材料一些基础研究工作。采用二步生长法在 GaAs 衬底上生长优质 InSb 薄膜,厚度4.8μm,其室温迁移率达到4.3×10~4cm~2V·s,载流子浓度为2.4×10~(18)cm~(-3),77K 时载流子浓度为7.49×10~(15)cm~(-3);并在生长各种类型 InAsSb 超晶格材料的基础上,首次生长了 InAs_(0·05)Sb_(0·95)/InSb 应变层超晶格结构材料,其周期厚度为21nm,InSb 应变层与 InSb 层之间的共格度为0.65,本文还将叙述制作 InAsSb 长波红外探测器的具体工艺及其一些想法。