软件形式化开发方法的选择策略研究

随着软件形式化方法的不断发展,各种各具特色的形式化方法涌现出来,为了解决在具体的系统开发中如何选取合适的形式化方法,对目前较为流行的几种形式化方法RSL,B,VDM,Z的特点进行对比分析,然后针对不同的软件开发人员和所需开发系统的不同,给出了适合用形式化方法开发的情况和如何选择合适的形式化开发方法。     

基于AMBE-1000与nRF401的无线语音传输系统的实现

介绍了Digital Voice System. Inc公司的AMBE-1000芯片与挪威Nordic 公司的nRF401芯片的特点与工作原理,给出了一种基于AMBE-1000和nRF401的无线语音传输系统的实现.系统采用AMBE-1000 结合TCM320AC36C进行语音信号的处理;同时,采用nRF401传输数字化后的语音信号;在整体上,采用AT89C52 处理器负责接口之间的数据处理.提出了系统的硬件设计、软件流程.此系统具有无需许可证、功耗低、使用方便等特点,可广泛应用于无线语音传输系统的产品设计中.     

Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts

The forward current－voltage (I－V) characteristics of polycrystalline CoSi₂/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10^-4A·cm^-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi₂/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.     

用于千兆以太网模拟接收前端的预均衡电路

文章采用0．18μm／3．3V 1P6M标准CMOS工艺设计实现了用于千兆(1000BaseT)以太网模拟接收前端的预均衡电路。电路由基带漂移补偿电路和可变增益放大器两部分组成，基带漂移补偿电路补偿了由于变压器的高通特性引起的信号基带漂移现象。调整范围从1．75V到2．25V。可变增益放大器除了具有变化范围从1．3到5、共15档的常规增益可调功能外。还具有带宽65MHz的低通滤波特性和共5档的高频补偿功能，版图后仿真结果表明所设计电路完全达到了千兆以太网的系统要求，很好地实现了对输入信号的模拟预均衡处理。     

Development of the Hamiltonian and transition moment operators of symmetric top molecules using the O (3) ⊃ C∞v ⊃ C3v group chain

We present a development of the Hamiltonian, dipole moment, and polarizability operators for XY₃Z molecules. These rovibrational operators are written with the aid of a tensorial formalism derived from the one already used in Dijon and adapted to the XY₃Z symmetric tops in a recent paper [A. El Hilali, V. Boudon, M. Loëte, J. Mol. Spectrosc. 234 (2005) 166-174]. We use the O (3) ⊃ C_∞v ⊃ C_3v group chain. Expressions for the matrix elements are derived for these operators.     

基于CAN控制器SJA1000的智能高速控制系统设计

本文介绍了一种新型的现场总线控制器SJA1000的基本原理结构及功能的特点，重点叙述了基于CAN控制器SJA1000的智能控制系统硬件电路及软件设计，给出了初始化程序。     

一种新型非晶态分子材料的非线性光学折射率和吸收特性

用单光束扫描法测量了在532nm处一种新型非晶态分子材料5,5′Bis(dimesitylboryl)2,2′bithiophene的非线性折射率和吸收系数样品非线性透射特性的分析表明,在靠近线性吸收区的532nm处有饱和吸收存在由三能级饱和模型和Zscan法确定了饱和强度、非线性折射率的实部和虚部研究结果表明:这种新型非晶态分子材料具有非常好的光子学应用前景.     

基于AT89C51和SJA1000控制器实现CAN总线接口

以单片机AT89C51和SJAl000控制器为核心组成了CAN总线接口模块。介绍了硬件原理图和SJAl000的初始化、发送和接收模块程序的设计方法。     

一类二阶常微分方程奇异边值问题多重解的至少个数

本文利用变分原理和Z2不变群指标研究了二阶常微分方程边值问题的多重解．得出了这类解个数的下界估计     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.