Particle Size Analysis by Transmission Fluctuation Spectrometry: Experimental Results Obtained with a Gaussian Beam and Analog Signal Processing

Transmission fluctuation spectrometry (TFS) is a method for the analysis of particle size distributions based on the statistical fluctuations of a transmission signal. Complete information on the PSD and particle concentration can be retrieved by a special transformation of the transmission signal, whereby the expectancy of the transmission square (ETS) is determined after the signal has been subjected to a procedure of spatial and temporal averaging. By varying the averaging parameters over a wide range, a spectrum of ETSs is obtained and introduced into a linear equation system, which yields the PSD. In the experimental realization presented here, variable temporal averaging is realized in the frequency domain with a series of low pass filters at different cutoff frequencies while spatial averaging inevitably occurs as the particles pass through a focused Gaussian beam of finite cross section. Experimental results on spherical particles (glass beads) and non‐spherical particles (SiC) are presented. The PSDs are resolved in 30 intervals within a particle size range from 1–1000 μm, employing a modified Chahine inversion algorithm. So far, the measurements are limited to moderate particle concentrations. Some influences affecting the measurements, especially for higher particle concentrations, are discussed in detail.     

MILO中场不稳定性的非线性发展及混沌行为

 以磁绝缘传输线振荡器中电子运动和辐射场演化方程为基础，分析了场与电子相互作用过程中的不稳定性。这种不稳定性的发展导致场出现极限环振荡和混沌。在软非线性区域，辐射场表现为不连续的极限环振荡；在硬非线性区域，辐射场表现为连续的混沌行为。控制失谐量可加速或抑制这些不稳定态的出现。优化和调节参数可控制器件的运行状态, 获得较高的输出功率。     

Une méthode de calcul des coefficients de réflexion et de transmission d'une houle bidimensionnelle en milieu confinéA new method for the calculation of transmission and reflection coefficients for water waves in a small basin

This paper presents a method to estimate reflected and transmitted wave amplitude spectra in a bounded domain such as a wave tank, when available data signals must be shortened due to interferences and wall effects. This paper extends the well known Goda and Suzuki two-probe method to three probes. The paper also suggests solutions to compute reliable transmission and reflection coefficients in spite of problems linked to higher harmonics and to the interference between different wave trains propagating in the tank. To cite this article: G. Duclos, A.H. Clément, C. R. Mecanique 331 (2003).     

应用波分复用改善像束传像系统像质的研究

本文通过分析空间波分复用系统中包散元件的色散平均效应,用线扩散传递函数研究了像束传像性质,由光学成像的本征理论用像束成像信息量分析了波分复用改善像束传像像质的机制,并从实验上验证了上述分析结论.     

The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers

A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111} and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]_Zn and [111]_Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are [0001]_ZnO//[−111]_ZnSe, and [01−11]_ZnO//[011]_ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers.     

MOCVD生长的GaN单晶膜透射光谱研究

采用MOCVD技术在Al2O3(0001)衬底上生长了GaN薄膜，使用透射光谱、光致发光光谱和X射线双晶衍射三种技术测试了五类GaN薄膜样品，实验结果表明：GaN薄膜透射谱反映出的GaN质量与X射线双晶衍射测量的结果一致，即透射率越大，半高宽越小，结晶质量越好；而X射线双晶衍射峰半高宽最小的样品，其PL谱的带边峰却很弱，这说明PL谱反映样品的光学性能与X射线双晶衍射获得的结晶质量不存在简单的对应关系，同时还报导了一种特殊工艺生长的高阻GaN样品的RBS／沟道结果。     

Synthesis,characterization, and electrical properties of polypyrrole/multiwalled carbon nanotube composites

Size‐controllable polypyrrole (PPy)/multiwalled carbon nanotube (MWCNT) composites have been synthesized by in situ chemical oxidation polymerization directed by various concentrations of cationic surfactant cetyltrimethylammonium bromide (CTAB). Raman spectra, FTIR, SEM, and TEM were used to characterize their structure and morphology. These results showed that the composites are core (MWCNT)–shell (PPy) tubular structures with the thickness of the PPy layer in the range of 20–40 nm, depending on the concentration of CTAB. Raman and FTIR spectra of the composites are almost identical to those of PPy alone. The electrical conductivities of these composites are 1–2 orders of magnitude higher than those of PPy without MWCNTs. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6449–6457, 2006     

A coincidence transmission electron microscope with digital waveform measuring system for analytical microscopy

We have been developing a new analytical transmission electron microscope (TEM), called a coincidence TEM, which in principle enables elemental mapping images to be observed at a high signal‐to‐noise (S/N) ratio under very low dose radiation conditions. In this paper, we report the development of a coincidence TEM with a digital waveform measuring system for obtaining a coincidence elemental mapping image. In this system, analog signals detected by a Si(Li) detector and a multianode, position‐sensitive photomultiplier (PSPM) are continuously converted into 12‐bit digital waveform data at a rate of 100 MHz, and transferred to a PC. From the transferred digital waveform data, information on X‐ray photon energy, electron incident position, and detection times of both X rays and electrons are calculated by digital waveform measurement, which lead to the observation of a successful coincidence elemental mapping image. Copyright © 2005 John Wiley & Sons, Ltd.     

The Micro-Theory of Ultra-Short Pulse Propagating in Nonlinear Fiber

The modified quantum nonlinear Schrodinger equation of ultra-short pulse propagating in fiber is derived using dispersion relation and the Hamiltonian of the transmission system. The derived equation is solved with linearization approximation, and modulation instability is analyzed. The equation is also solved with Hartree approximation. The results indicate that pulse power, loss and self-steeping effect change the critical frequency, the maximum gain and the gain spectrum range, but the third order dispersion has no effect on modulation instability. The expectation value of optical field is average of a set of modified classical solitons, and higher order terms change the amplitude, pulse position and phase of soliton.     

Electron microscope studies of InxGav1−xAs/GaAs/Si grown by metalorganic chemical vapor deposition

The microstructure of In_xGa_1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.