IC卡在电信领域的应用模式

本文列举了ＩＣ卡在电信领域及一些国家和地区的应用之后，给出了国际ＩＣ卡的应用发展模式，以供有关部门参考。     

Rare-earth-enabled universal solders for microelectromechanical systems and optical packaging

In packaging of microelectromechanical systems (MEMS), optical, and electronic devices, there is a need to directly bond a wide variety of inorganic materials, such as oxides, nitrides, and semiconductors. Such applications involve hermetic-sealing components, three-dimensional MEMS assembly components as well as active semiconductor or optical components, dielectric layers, diffusion barriers, waveguides, and heat sinks. These materials are known to be very difficult to wet and bond with low melting-point solders. New Sn-Ag- or Au-Sn-based universal solders doped with a small amount of rare-earth (RE) elements have been developed, which now allow direct and powerful bonding onto the surfaces of various MEMS, optical, or electronic device materials. The microstructure, interface properties, and mechanical behavior of the bonds as well as the potential packaging applications of these new solder materials for MEMS and optical fiber devices are described. Various packaging-related structural, thermal, or electrical issues in MEMS are also discussed.     

TCA785移相控制芯片应用方法的改进

TCA785是德国西门子公司生产的一种性能优秀的移相控制芯片 ,该器件具有温度适应范围宽 ,对过零点的识别更加可靠 ,输出脉冲的整齐度更好 ,移相范围更宽等优点 ,此外 ,由于TCA785的输出脉冲宽度可以手动自由调节 ,因此 ,该器件可广泛应用在晶闸管控制系统中。文章根据TCA785芯片的使用特点以及在逆变器实际运用中可能出现的一些问题 ,提出了一种改进的设计方法     

TOPSwitch集成电路在DC/DC电源设计中的应用

文章介绍了PWM／MOSFET二合一的TOPSwitch系列集成电路及其在DC／DC电源设计中的应用，还介绍了基本反馈方式的DC／DC拓扑结构及其改进措施，并对由TOPSwitch集成电路构成的DC／DC电源进行了抗中子实验。     

对未来我国覆铜板业技术发展的战略与任务的探讨

对未来十年我国覆铜板业技术发展的战略与技术开发重点任务进行了探讨。     

利用电泳技术在不锈钢和铁基底上制备MgB2带材

本文首次报道了利用电泳技术在铁和不锈钢基底上制备MgB2超导带材.电阻测量表明,沉积在铁和不锈钢基底上MgB2带材的超导零电阻转变温度分别为37.5K和31K,超导转变宽度分别为0.3K和1K.磁测量表明,(5K,OT)时不锈钢基底上带材的临界电流密度为6×105(A/cm2).X射线衍射谱和扫描电子显微镜图象表明样品结晶良好,晶粒生长致密.本工艺制备MgB2带材时不受系统真空度的限制,生长迅速,成本低廉,并且可以根据不同的需要任意选择基底的形状和大小.     

Phenol biosensor based on electrochemically controlled integration of tyrosinase in a redox polymer

An amperometric biosensor for the detection of phenolic compounds was developed based on the immobilization of tyrosinase within an Os-complex functionalized electrodeposition polymer. Integration of tyrosinase within the redox polymer assures efficient catechol recycling between the enzyme and the polymer bound redox sites. The non-manual immobilization procedure improves the reproducibility of fabrication process, greatly reduces the desorption of the enzyme from the immobilization layer, and, most importantly prevents fast inactivation of the enzyme by its substrate due to fast redox cycling. A two-layer sensor architecture was developed involving ascorbic acid oxidase entrapped within an electrodeposition polymer in a second layer on top of the redox polymer/tyrosinase layer. Using this sensor architecture it was possible to eliminate the current interference arising from direct ascorbate oxidation up to a concentration of 630 μM ascorbic acid. The effects of the polymer thickness, the enzyme/polymer ratio, and the applied potential were evaluated with respect to optimal sensor properties. The sensitivity of the optimized sensors for catechol was 6.1 nA μM⁻¹ with a detection limit of 10 nM, and for phenol 0.15 nA μM⁻¹ with a detection limit of 100 nM.     

浅谈集成电路的废气处理

集成电路的工业废气有含氟化物、硫酸雾的酸性废气,含氨的碱性废气,含异丙醇、光刻胶的有机废气,含SiO_2的含尘废气,以及含硅烷、磷烷的工艺尾气等,这些工业废气中大部分成分是有毒有害的,必须进行有效的处理才能排入大气中。主要讨论上述工业废气的分类、处理方式、应用范围及应用实例等。     

Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(0 0 1) substrates

We have investigated the influence of vicinal GaAs substrates on the optical and electronic properties of InGaAs/GaAs quantum wells (QWs). A single In_0.10Ga_0.90As QW was grown by molecular-beam epitaxy on a vicinal GaAs(0 0 1) substrate with a miscut angle of 0° (nominal), 2°, 4° and 6° towards [1 1 0]. The carrier diffusion was obtained by a micro-photoluminescence scan technique that permits to observe the effective diffusion length characterized by the lateral spread of carriers in the QW followed by radiative recombination. The carrier diffusion length was obtained parallel (L_||) and perpendicular (L) to the atomic steps. The diffusion length decreases as the temperature increases up to 100 K. Above this temperature we found different behaviours that depend on the sample miscut angle.     

Micromechanisms and Mechanics of Damage and Fracture in Thin Film/Substrate Systems

The purpose of this paper is to review the mechanisms and available theoretical methods for modeling the strength and failure of thin film/substrate systems