为调谐器设计的带自动幅度控制1.1GHz差分压控振荡器

为集成调谐器接收机芯片系统设计了一个带自动幅度控制回路的差分结构电容电感压控振荡器.通过采用pMOS管作为有源负阻使振荡器谐振回路可以直接接地电平,减小了寄生效应,扩大了频率调谐的线性及其范围.采用的自动幅度控制AAC回路具有元件少,噪声低,控制灵敏,调节容易,结构简单及设计方便的优点,并保证振荡器电路的性能最小地依赖于环境和制造工艺参数的变化.所设计的压控振荡器采用新加坡特许50GHz 0.35μm SiGe BiCMOS工艺流片,经测试在1MHz频率偏移处达到了-127.27dBc/Hz的相位噪声性能,具有宽的(990～1140MHz)和线性(调谐增益32.4MHz/V)的频率调谐曲线.整个振荡器电路在5V的供电电压下仅消耗6.6mA的电流,可以满足调谐器的应用需要.     

LTCC基板制造工艺研究

低温共烧多层陶瓷（ＬＴＣＣ）基板是制造复杂微电子产品多芯片组件（ＭＣＭ）的重要部件。详细地讨论了ＬＴＣＣ基板制造工艺，介绍了多年研究之经验及国外的有关技术，还指出了目前工艺中存在的技术问题及在工艺水平上与国外的差距。采用目前工艺，可做出２０层布线、线宽及间距均为０．２０ｍｍ、８０ｍｍ×８０ｍｍ的多层共烧基板     

Flexible rewritable organic memory devices using nitrogen-doped CNTs/PEDOT:PSS composites

Nonvolatile rewritable organic memory devices based on poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and nitrogen doped multi-walled carbon nanotube (NCNT) nanocomposites were fabricated on glass and PET substrates.Organic memory devices with bistable resistive switching were obtained using very low NCTN concentration (∼0.002 wt%) in the polymeric matrix. The memory devices exhibited a good ON/OFF ratio of approximately three orders of magnitude, a good retention time of 10⁴ s under operating voltages ≤ |4V| and a few hundredths of write-read-erase-read cycles. The bistable resistive switching is mainly attributed to the creation of oxygen vacancies. These defects are introduced into the thin native Al oxide (AlOx) layer on the bottom electrode during the first voltage sweep. The well-dispersed NCNTs immersed in PEDOT:PSS play a key role as conductive channels for the electronic transport, hindering the electron trapping at the AlOx-polymer interface and inducing a soft dielectric breakdown of the AlOx layer. These PEDOT:PSS + NCNTs memory devices are to easy to apply in flexible low-cost technology and provide the possibility of large-scale integration.     

A low-temperature X-ray diffraction study of the Cu2ZnSnSe4 thin films

Low-temperature XRD measurements were performed to confirm the phase composition and structural parameters of the electrochemically deposited Cu₂ZnSnSe₄ thin films on flexible metal substrates.     

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简要介绍了中国承担设计和制造任务的ITER计划采购包的构成情况，分析了ITER采购包采用标准的原则和ITER中国采购包引用标准的特点，总结了ITER中国采购包标准化现状。基于当前ITER中国采购包对标准的需求以及着眼于国内磁约束核聚变长远发展需要，讨论提出了当前ITER中国采购包的标准化策略建议。     

Interactions with herring sperm DNA and biological studies of sparfloxacin drug‐based copper(II) compounds

Copper(II) complexes of the type [Cu(SPF)(Lⁿ)Cl] (where SPF is sparfloxacin and Lⁿ = substituted terpyridines) were synthesized and found to have a distorted octahedral geometry. Superoxide dismutase‐like activity of the complexes was measured using a nitroblue tetrazolium/reduced nicotinamide adenine dinucleotide/phenazine methosulfate system and expressed in terms of the concentration of complex which terminates the formation of formazan by 50% (IC₅₀ value), which was found to range from 0.572 to 1.522 µm . Interactions of the complexes with herring sperm DNA were studied by absorption titration, viscosity measurement and gel electrophoresis under physiological conditions. The antimicrobial efficiency of the complexes was tested against five different microorganisms and showed good biological activity. All the complexes showed good cytotoxic activity, with LC₅₀ values ranging from 4.01 to 9.64 µg ml^?1. Copyright © 2012 John Wiley & Sons, Ltd.     

Low temperature hermetic laser-assisted glass frit encapsulation of soda-lime glass substrates

Room temperature and low temperature (120 °C) laser-assisted glass frit bonding of soda-lime glass substrates are accomplished in this work. The locally laser melted bonding showed hermeticity with helium leak rate of <5×10⁻⁸ atm cm³ s⁻¹, maintaining its leak rate even after standard climatic cycle tests. Small size devices were bonded at room temperature while larger areas were sealed at the process temperature of 120 °C. The sealing parameters were optimized through response surface methodology that makes the process capable for further development regardless of device size.     

Reduced water vapor transmission rates of low-temperature-processed and sol-gel-derived titanium oxide thin films on flexible substrates

Sol-gel-derived, crack-free, and condensed TiO_x thin films with improved barrier properties were successfully fabricated on polymeric substrates with a simple two-step heat treatment at low temperatures. To assess the barrier properties of the TiO_x thin films, Ca corrosion tests were conducted and their water vapor transmission rates (WVTRs) were measured. We found that the two-step heat treatment (at 45 °C for 90 min and 110 °C for 60 min) produces a close-packed TiO_x structure that substantially reduces the WVTRs of the coated polymeric substrates. The WVTRs of 86 nm thick TiOx thin films on polyethylene naphthalate (PEN) substrates at a relative humidity (RH) of 90% were found to be 0.133 g m⁻² day⁻¹ at 38 °C and 0.0387 g m⁻² day⁻¹ at 25 °C. In addition, the WVTR value of the TiO_x thin films on PEN substrates are stable with respect to bending: it was found to increase by only ∼13% after 100 repetitions of bending with a 20 mm radius.     

熔丝类电路的修调探索

随着熔丝在电路设计中的应用普及,测试环节对熔丝修调的要求也越来越高,对测试人员提出了更大挑战。修调熔丝的目的是为了获得更精确的电压或者频率,按照制造材料和工艺可分为金属和多晶硅两种类型。不同的工艺结构决定了不同电路的熔丝有不同的特性,修调时需要针对具体电路具体分析,选择适宜的修调方案,并且编写简洁高效的修调程序。文章介绍了常见熔丝的特性,总结几种常用的修调熔丝方法,并分析了这些方法的各自特点,同时对修调熔丝的程序算法做了探讨。     

一种对三维芯片中硅通孔进行完整建模与寄生参数提取的有效方法

针对三维芯片中硅通孔（through-silicon via, TSV）的准确电学建模问题,本文提出了一种电阻电容（RC）电路模型以及相应的有效参数提取技术。该电路模型同时考虑了半导体效应与静电场影响,适合于低频与中频的电路信号范围。该方法采用一种基于悬浮随机行走（floating random walk, FRW）算法的静电场电容提取技术,然后将它与刻画半导体效应的MOS电容结合,形成等效电路模型。与Synopsys公司软件Sdevice所采用的对静电场/半导体效应进行完整仿真的方法相比,本文方法计算效率更高,并且也能处理一般的TSV电路版图。对多个含TSV的结构进行了计算实验,结果验证了本文方法在从10KHz到1GHz频率范围内的建模准确性,也显示出它相比Sdevice方法最多有47倍的加速比。