Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits

A combination of two conventional junction isolation structures is used to produce a device, which significantly improves the blocking of minority carriers injected into the substrate of a power IC due to switching of an inductive load. Simulation results show that the connection scheme employed greatly enhances the efficiency of the structures. A substrate current reduction of up to four orders of magnitude compared to conventional junction isolation structures is achieved. The significance of doping profiles in the p-sinker region is evaluated.     

Defect formation in epitaxial oxide dielectric layers due to substrate surface relief

Defects were characterized in epitaxial (001) CeO₂ films deposited and planarizedin situ on patterned (001) LaAlO₃ substrates by ion beam assisted deposition (IBAD). A hill and valley structure with steps running parallel to the [100] LaAlO₃ axis was produced on the surface of the substrate by photolithography and ion beam etching prior to film deposition. A conformai epitaxial CeO₂ layer of ∼ 100 nm thickness was deposited on the heated substrate by e-beam evaporation. Lattice-matching between the e-beam film and the substrate was of the type: (001) CeO₂∥(001) LaAlO₃ and [110] CeO₂∥[100] LaAlO₃. Evaporative deposition of additional film onto the conformai layer was accompanied by bombardment with a 500 eV argon/oxygen ion beam to promotein situ planarization. Extreme lattice misfit for the orientation (001) CeO₂∥(001)LaAlO₃ and [001] CeO₂∥[001] LaAlO₃ caused formation of dislocations in the e-beam CeO₂ film in the vicinity of individual ledges in the substrate surface. Coherence of the CeO₂ film was locally lost in the step regions of the hill and valley structure. The large patterned steps, which are composed of numerous adjacent ledges in the LaAlO₃ surface, caused nucleation of CeO₂ with a tilt misalignment of up to ∼5‡ about the substrate [100]. Nucleation and growth of nonepitaxial CeO₂ crystallites was observed along the step regions of the film during the IBAD portion of deposition. Defect formation in the e-beam ceria layer due to substrate surface relief indicates that “lattice engineering≓ of multilayer epitaxial structures may not be possible when nonplanar surfaces are created during device fabrication. The IBAD CeO₂ layer was more defective than the conformai layer deposited without the impinging ion beam, even in the portions of the film where epitaxy was maintained throughout both layers.     

关于加速我国军用片式IC发展的思考与建议

本文以大量数据为基础，分析了发达国家片式集成电路（ＳＭＤ－ＩＣ）的发展及其应用趋势。根据我国军用ＩＣ片式化的现状和军事装备对ＳＭＤ－ＩＣ需求的调整结果，充分论证了加快我国军用ＩＣ片式化进程的必要性和紧迫性。     

SH320大闭塞量低噪声视频放大器

本文介绍了ＳＨ３２０大闭塞量低噪声视频放大器的设计和研制。从对主要技术指标的分析入手，确定了合理的方案，并对电路进行了优化设计。在制作上，根据性能和结构要求，采用了高密度布线、多芯片组装的薄膜工艺。最后实现的是一种ＭＣＭ（多芯片组件）电路，在电性能上优于用户的要求，在工艺实现上也是采用ＭＣＭ技术的有益尝试。     

电流反馈运算放大器电路与性能综述

电流反馈型运算放大器开拓了一种与双极互补工艺相结合的精巧电路拓扑结构，具有极佳的动态特性。该电路是８０年代末期模拟集成电路新进展的研究成果之一，有较高实用价值和一定理论价值。文章全面剖析了电流反馈运算放大器的拓扑结构特点和电路工作机理，综述了其性能特点、应用领域及相关研究课题。     

基于RFID电子标签和无线数据传输网络的可视化集装箱堆场实时信息管理系统

我国生产的集装箱占世界生产量的95%以上,传统的手工集装箱堆场管理已经不适合现状的要求。本文介绍的自主开发的基于RFID电子标签和无线数据传输网络的可视化集装箱堆场实时信息管理系统可以有效地解决自动ID收集、跟踪与监控的实际问题,有助于供应链中的集装箱管理。     

高压线性电流传感器IR2175及其应用

IR2175是IR(International Rectifier)公司生产的高压线性电流传感器，它不用通过AID转换便可直接输出PWM数字信号，从而简化了电机控制电路的电流检测和保护操作，可方便地用于电机驱动系统中。文中介绍了IR2175的结构特点、引脚功能和主要特性，给出了其典型应用电路。     

模拟集成电路直流参数测试系统的研制

文章介绍了自动测试系统的原理与内部模块之间的工作过程及系统的总体结构。懈决了精确测量单元等关键技术．研制了一种通用性强,成本低．性能可靠的自动测试系统。经过实验与生产应用,所研制的测试系统适合于半导体行业的实际生产需要,具有比较高应用价值。     

集成电路测试数据的处理

简述了集成电路测试数据的一些处理方法,包括临界数据的处理、异常数据的判定和剔除、测试结果有效位数的确定等;介绍了在进行集成电路性能参数测试时需要考虑的几个关键因素;对测量误差和减小测量误差的方法进行分析,使测试人员可对原始数据进行比较合理的处理;使测试值与被测集成电路的性能真值更加接近,避免对电路合格与否做出误判,从而使检验工作更加准确无误。     

集成电路封装溢料问题探讨

溢料问题是集成电路封装过程中常见的质量问题,如何减少溢料的发生和去除溢料方法是封装工程师、电镀工程师以及材料生产商和模具制造商共同探讨的课题。文章详细阐述了集成电路封装过程中常见的溢料发生机理,描述了溢料对组装的危害、如何防止溢料的发生以及溢料去除方法,并且对溢料去除方法的未来发展进行了展望。文中对溢料的发生机理方面进行了细致的研究,从材料、设备以及工艺方法等方面进行深入的解析,提出了有效的改善措施。另外,对业内溢料去除的几种方法进行介绍的同时,强调了各种溢料去除方法的效果及对产品质量的影响,并进行了有效评估。文章对溢料发生和去除方法的探讨是建立在理论基础之上,运用最细致的解析手段进行剖析,更具有指导意义,为提高集成电路封装良率以及组装良率提供理论支持。