国外模拟IC的发展现状分析

本文主要根据电子整机的发展要求,从集成化、高性能和高可靠等三方面分析国外模似IC的发展,进而说明模拟IC总的发展趋势及其表现。最后指出,模拟IC正面临一个新的变革时期。     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

对集成电路封装塑封料湿敏性评定技术的探讨

在有关塑封料的湿度浸入研究中,湿气或者是穿过聚合物渗透,或者是沿着引线与密封树脂之间的界面渗透。本文主要是通过试验对与湿度渗透有关的新一代树脂的特性给予评定,并判定引线框架通路是如何影响湿度浸入的。     

基于MOCCⅡ多功能滤波器的设计

本文简要介绍了Mulitple-output CCⅡ（简称MOCCⅡ）器件的电路特性，提出了一个新颖的基于MOCCⅡ多功能滤波器的电路。该电路可同时实现一阶低通以及二阶低通、高通、带阻、全通和带通等输出。经分析，该电路具有很低的灵敏度。电路中所有RC元件均接地，便于集成等优点。     

集成pH－ISFET／压力传感器的研究

基于ＳＤＢ／ＳＯＩ材料和硅微机械加工技术，提出了一种含微参比电极和择优差分补偿单元的背面引线ＰＨ－ＩＳＦＥＴ／压力传感器的新结构。并且设计了高稳定的可调芯片自恒温系统，以减少硅材料对温度敏感的效应。这种结构既方便地实现敏感元和信号处理电路的完全隔离，又有效地改善了敏感特性和稳定性。初步实验结果证实了新结构设计是成功的。     

动态分频器技术

本文介绍了动态分频器的基本原理；详细叙述了动态分频器电路及其主要工艺技术；综述了国外动态分频器的发展动态。     

Measurement selection for parametric IC fault diagnosis

This article presents experimental results which show feedforward neural networks are well-suited for analog IC fault diagnosis. Boundary band data (BBD) measurement selection is used to reduce the computational overhead of the FFN training phase. We compare the diagnostic accuracy between traditional statistical classifiers and feedforward neural networks trained with various measurement selection criteria. The feedforward networks consistently perform as well as or better than the other classifiers in term of accuracy. Training using BBD consistently reduces the FFN training efforts without degrading the performance. Experimental results suggest that feedforward networks provide a cost efficient method for IC fault diagnosis in a large scale production testing environment.This work is supported by NSF-IUC CDADIC, Project 90-1.     

半导体集成电路在锂离子电池保护电路中的应用

本文首先扼要介绍锂离子电池保护电路的功能，然后分别介绍过充电保护，过放电保护，过电流保护，最后列举几种保护性半导体IC的性能及应用电路的结构。     

IC卡在电信领域的应用模式

本文列举了ＩＣ卡在电信领域及一些国家和地区的应用之后，给出了国际ＩＣ卡的应用发展模式，以供有关部门参考。     

MCM用氮化铝共烧多层陶瓷基板的研究

通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。