21世纪之初我国电子元件发展战略探讨

在世纪之交时 ,结合世界电子元件发展总趋势 ,对我国电子元件工业发展提出了新的要求 ,也指出了新世纪初的三个难得的机遇 :1移动通信业的国产化率大幅度增长 ;2计算机市场的高速增长 ;3片式元件及相关技术的发展潜力很大。并设想了几种我国电子元件发展的模式 ,强调人才在电子元件企业中的重要作用。     

Stacked field effect transistor integration in double channel transistors (DCT) with tri-state transfer slope and ballistic field effect behavior

Implants create isolated electric charge under the channel region of nFET and pFET. By this, a new local extrema in the transfer slope is obtained while maintaining low leakage in off state. The results are explained by electro-static field simulation and yield in a circuit model with two parallel channel resistors, indicating a double channel field effect transistor (DCT). The new DCTs allow complex functions in logic or small transistor bit cells in the future.     

Performance enhancement in Ge pMOSFETs with <1 0 0> orientation fabricated with a Si-compatible process flow

The electrical characterization of Ge pMOSFETs having <1 1 0> and <1 0 0> orientations with gate lengths of 3 μm have been demonstrated with a Si-compatible process flow. Employment of <1 0 0> orientation in Ge pMOSFETs without incorporation of strain provided ∼10% enhancement in effective hole mobility and drive current when compared to <1 1 0> oriented regular transistors. In this fabrication technology, the effective hole mobility improves from 190 cm²/V s for <1 1 0> devices to 210 cm²/V s for the <1 0 0> oriented Ge devices at room temperature, which is ∼2 times the hole mobility of Si pFET devices. This study also presents first time investigation of post metallization anneal (PMA) at 350 °C in H₂ ambient for <1 0 0> Ge pMOSFETs. The overall performance of the devices has been enhanced by 15% after performing PMA. It is likely attributed to a strong decrease of D_it, improving the transistor performance. These results indicate that the <1 0 0> Ge pMOSFETs could be a viable candidate for future low voltage high speed CMOS applications.     

On‐Substrate Preparation of an Electroactive Conjugated Polyazomethine from Solution‐Processable Monomers and its Application in Electrochromic Devices

An electroactive polyazomethine is prepared from a solution processable 2,5‐diaminothiophene derivative and 4,4′‐triphenylamine dialdehyde by spray‐coating the monomers on substrates, including indium tin oxide (ITO) coated glass and native glass slides. The conjugated polymer was rapidly formed in situ by heating the substrates at 120 °C for 30 min in an acid saturated atmosphere. The resulting immobilized polymer is easily purified by rinsing the substrate with dichloromethane. The on‐substrate polymerization is tolerant towards large stoichiometry imbalances of the comonomers, unlike solution step‐growth polymerization. The resulting polyazomethine is electroactive and it can be switched reversibly between its neutral and oxidized states both electrochemically and chemically without degradation. A transmissive electrochromic device is fabricated from the immobilized polyazomethine on an ITO electrode. The resulting device is successfully cycled between its oxidized (dark blue) and neutral (cyan/light green) states with applied biases of +3.2 and ‐1.5 V under ambient conditions without significant color fatigue or polymer degradation. The coloration efficiency of the oxidized state at 690 nm is 102 cm² C^?1.     

稀土有机EL器件的光伏特性

有机电致发光 (ＯＥＬ)是当前发光研究的热点之一[1,2 ] ,ＯＥＬ器件正处于研究开发阶段[3] 。其中稀土ＯＥＬ研究也是重要内容之一[4 ,5] ,但对于稀土ＯＥＬ器件 ,人们的着眼点主要集中在这些器件的电光转换性能上 ,有关光电转换特性报道很少 ,我们在研究ＯＥＬ器件过程中发现 ,通常的双层稀土ＯＥＬ器件具有明显的光伏性能 ,而且超过ＴＰＤ/ＡｌＱ双层ＯＥＬ器件[6] 的光电 (ＰＶ)性能。图 1给出了本研究所用材料分子结构 ,图 2给出了双层器件ＩＴＯ/ＴＰＤ/Ｇｄ(ＤＢＭ ) 3ｂａｔｈ/Ｍｇ :Ａｇ的光电压和光电流响应曲线。这与它们的吸收…     

碳量子点纳米材料在铅卤钙钛矿太阳能电池中的应用研究进展

碳量子点（CQDs）是一类粒径较小,光学性能显著,且电荷传输性能优异的类半导体纳米材料,在钙钛矿太阳能电池的性能调控和改善中得到广泛的应用。从CQDs纳米材料的合成、性能及应用出发,综述了CQDs纳米材料在钙钛矿太阳能光电器件中电子传输层、钙钛矿光吸收层和空穴传输层等方面的应用进展,并展望了该类材料调控钙钛矿太阳能器件性能的发展趋势。