Structural characterisation of Sb-based heterostructures by X-ray scattering methods

Antimonide-based superlattices dedicated to the elaboration of opto-electronic devices have been studied by X-ray scattering techniques. In particular, specular and non-specular X-ray reflectometry experiments have been performed on two MBE-samples elaborated with different shutter sequences at the interfaces. The results have shown a limitation of the incorporation of Sb species in the subsequent InAs layer for one of the samples, as expected.Then, a study on a InGaAs-cap layer/(InGaAs/AlAsSb)_N superlattice grown on a InGaAs/InP buffer layer by both specular X-ray reflectometry and High resolution X-ray diffraction is reported. In particular, the results have revealed the presence of a highly disturbed thin-layer on top of the MOVPE-made GaInAs, whose presence has been explained by In-concentration modification during the desoxidation procedure at the surface of the MOVPE-made GaInAs.Beside the results on the Sb-based heterostructures, the use of X-ray scattering metrology as a routinely working non-destructive testing method has been emphasized.     

Tuneable Sagnac comb filter including two wave retarders

In this paper we study theoretically and experimentally a wavelength-tuneable Sagnac birefringence filter. The device is a Sagnac interferometer including a symmetric fibre coupler and a length of high-birefringence fibre in the loop. A wave retarder is inserted at each end of the birefringent fibre for absolute wavelength tuning. We show theoretically that wavelength tuning through wave plate orientation ensuring constant amplitude of the filtering function is possible only if a minimum of two wave retarders are included in the setup. The position of the transmission peaks then varies linearly with the angle of one of the retarders and can be adjusted over one entire channel spacing. This happens only when a quarter-wave retarder and a half-wave retarder are used, if the former is oriented at 45° with respect to the fibre birefringence axes, while the orientation of the latter serves as the adjustment parameter. The theoretical predictions are confirmed by the experimental results.     

相移阴影莫尔条纹正交化解调技术

提出一种基于克莱姆正则化分析法的三帧自标定相移阴影莫尔三维轮廓技术.该技术首先采用移动光栅的方法获得相移条纹图,然后通过不同帧相移条纹图相减去除条纹图背景,进而结合克莱姆正交化法和最小二乘法,发展了一种相位解调方法,提取了测量相位.以五步Harlharan算法为参考,用不同算法对同一物体表面进行测量.结果表明,相对于典型的三步相移法和主量分析方法,提出的方法测量得到的相位误差最小(0.5rad),且简化了测量过程.     

Electrical properties of silicon dioxide films fabricated at 700°C. I: Pyroltsis of tetraethoxysilane

We have studied the effects of different deposition and annealing ambients on silicon dioxide films produced via the pyrolytic decomposition of tetraethoxysilane at 700° C. The oxide and interface charge characteristics of capacitors incorporating these oxides were measured. The results of these studies were as follows. (1) Films deposited in nitrogen exhibited very poor electrical properties. This was due to the poor quality of both the LPCVD oxide bulk (manifest as a hysteretic instability exceeding one Volt in 20 nm films) and the LPCVD oxide-silicon interface (interface trap charge and fixed charge exceeding 10¹² cm⁻²). These characteristics were not improved by post-deposition annealing in nitrogen at 700° C. (2) As much as an order-of-magnitude reduction in interface traps and/or bias-induced drifts was obtained by exposure of the silicon substrate to 700°C oxygen ambients before, during, or after pyrolysis. The maximum improvement also required both post-deposition and post-metallization annealing treatments in nitrogen.     

垂直结构多色量子点LED(QD-LED)最新进展

量子点LED以胶体量子点为发光层,通过调节作为发光层量子点的尺寸可以制作出覆盖可见(380-780nm)以及近红外光谱的量子点LED (QD-LED),而且量子点LED器件发出的光谱范围很窄,其光谱半高宽可达30nm.简述了当今国内外关于QD-LED器件结构的研究成果以及器件的制作工艺,介绍了目前课题组最新的一些相关成果.重点阐述了目前已经得到验证的几种量子点器件结构,分析了其存在的优缺点,这些结论对进一步改进QD-LED的结构以及使其可以更有利于商业化提供了参考.     

以陶瓷厚膜为绝缘层的红色ZnS:Sm,Cl电致发光器件

报道采用高介电常数的陶瓷厚膜作绝缘层、ＺｎＳ：Ｓｍ,Ｃｌ作为发光层的红色薄膜电致发光器件。测量了器件的电致发光光谱和亮度电压曲线,研究了发光机理和效率电压等特性。制备的器件在电驱动下１６Ｖ启亮,最大亮度为１８．４ｃｄ／ｍ＾２,最大效率为０．０６１ｍ／Ｗ。     

Preparation and Ferroelectric Properties of YMnO3 Thin Films with c-Axis Preferred Orientation by the Sol-Gel Method

Hexagonal YMnO₃ has a ferroelectric property with an optimal remanent polarization along the c-axis. The c-axis oriented YMnO₃ thin films with a small leakage current were prepared by the sol-gel dipping method. The c-axis orientation of the films was promoted by the addition of diethanolamine to the Mn precursor solution. A heat treatment with multiple steps led to a dense film structure with fine grains. The dense structure resulted in the decrease of the leakage current. Furthermore, when the films were heat-treated in a vacuum, the leakage current became considerably small and the ferroelectricity of the YMnO₃ thin films was observed even at room temperature.     

Characterization of an all Sol-Gel Electrochromic Device WO3/Ormolyte/CeO2-TiO2

Electrochemical lithium intercalation in thin films of CeO₂-TiO₂ and WO₃, prepared by the sol-gel technique was investigated with cyclic voltammetry and spectroelectrochemical techniques in propylene carbonate solutions. A solid state system having the configuration WO₃/Ormolyte/CeO₂-TiO₂ has been assembled. The solid electrolyte, an organically modified electrolyte (ormolyte), was prepared with different [O]/[Li] ratios. The transmittance variation of this system during a potentiostatic step from –0.7 V to 0.8 V was about 35% at 550 nm.     

二阶非线性光学高分子研究的瓶颈——材料性能的综合优化

本文通过对二阶非线性光学高分子－极化聚合物的研究进展与实用化器件要求之差距的分析指出,稳定性问题已经基本解决其实用化的关键是如何在同一 实现性能的全面综合优化。