离子注入在Power MosFET中的应用

本文结合笔者的科研,论述了离子注入在Power MOS FET制作中的应用,并指出:由于离子注入较之扩散具有一系列优点,因此,离子注入不仅在制作Power MOS FET中作用巨大,而且在其他功率器件中的应用也将越来越广泛。     

The modified k·p method to investigate polarization effects in nitride quantum-well devices

The modified k·p method (which includes both stress and polarization effects) has been used to investigate recombination phenomena in nitride quantum-well (QW) devices. Within their volumes, both spontaneous and piezoelectric polarization have been found to have an essential influence on carriers behaviour. In particular, as a result of the quantum-confined Stark effect, energy of radiation emitted within the AlGaN/GaN/AlGaN QW has been found to decrease rapidly with an increase in the AlN mole fraction of the barrier material, which means—with an increase in mechanical stresses at the GaN/AlGaN heterojunctions. It should also be stressed that screening of polarization effects induced by free carriers at least partly reduced the above stress influence. So both effects, polarization and its screening, are equally important in exact modelling of an operation of nitride QW devices.     

On the optically transparent WDM ATM multicast (3M) switches

We describe an architecture design and implementation of the optically transparent wavelength-division-multiplexed (WDM) asynchronous-transfer-mode (ATM) multicast (3M) switch for all optical high-speed networks. By using the WDM techniques, the wire complexity in both the switch fabric and the concentrator can be reduced from O(N²) to O(N). By using integrated photonic devices and highly parallel processing and pipeline control electronic circuits the switch is handling signals at the cell level (53 bytes) instead of at the bit level and can achieve very high speed and high throughput operation. Several key components, including a cell synchronizer, a photonic VCI over-writting unit, a wavelength converter, an optical concentrator, and a WDM memory, have also been proposed to realize this 3M switch. All of the photonic devices are highly integratable and are very suitable for building future large-scale, low-cost photonic ATM switches. A combination of both the ATM and WDM techniques will provide an ultimate version for optical networking with almost unlimited capacity.     

一种基于HP EESOF软件的IMPATT二极管非线性电路模型参数的提取方法

通过对雪崩二极管非线性电路模型参数数学表达式的分析，利用HPEESOF软件进行电路模型的计算机模拟，计算出雪崩管在非线性状态下的器件阻抗，从而为雪崩管振荡器的设计提供了重要的理论依据。     

双极RF功率管的深阱结终端

给出了双极 RF功率管新的深阱结终端结构 .模拟分析表明 ,具有优化宽度、优化深度且填充绝缘介质的深阱结终端结构能使雪崩击穿电压提高到理想值的 95 %以上 .实验结果表明 ,深阱结终端结构器件 DCT2 6 0的BVCBO为理想值的 94 % ,比传统终端结构器件高 14 % ;与传统结构相比 ,在不减小散热面积的情况下 ,该结构还减小集电结面积和漏电流 ,器件的截止频率提高 33% ,功率增益提高 1d B     

对辐射感应闭锁窗口现象的解释

中、大规模CMOS器件受到瞬态辐射时，出现了闭锁单窗口、多窗口现象。为了获得闭锁窗口的出现原因，借助对窗口现象的有关参考文献的研究，利用计算机电路模拟软件，分析了CMOS器件多个闭锁路径之间的相互作用。在此基础上，提出了解释窗口现象的“三径”闭锁模型。应指出的是，该闭锁模型还需要试验上的进一步验证与支持。     

Printing via hot embossing of optically variable images in thermoplastic acrylic lacquer

A novel printing process via hot embossing of either grating or micro-mirror microstructures has been demonstrated in thermoplastic acrylic lacquer. Embossing experiments were performed in the temperature range 100-150 °C and at 80 kN force. The range of microstructures has included a dot-matrix hologram, grating-based optically variable devices (OVDs) and a micro-mirror based OVD. High quality replicas of each type of device have been fabricated using this process. Embossed replicas of grating-based OVDs have shown optical effects including image switching and color movement. For devices based on micro-mirror arrays, the embossed replicas have shown an optically variable switch between a portrait and a non-portrait image. Printing via an embossing process offers the possibility of incorporating optically variable devices into documents without the use of hot stamping foil. This is particularly relevant for documents based on polymeric substrates such as credit cards and polymer banknotes.     

半导体激光器的制造新技术

半导体激光器是激光器中的一种,它的制造技术有分子束外延、液相外延、金属有机物化学气相淀积、低压金属有机物化学气相淀积和化学束外延等.结果表明,器件特性与制备方法有关.例如:利用金属有机气相外延生长的GaAs/GaAlAs异质结,可以制造高精致的大功率激光器,其波长为780～880nm.用具有特殊波导特性的质量阱(QW)结构能满足大功率需要.各种参量包括这些层的结构和配合以及多层结构的光、电特性,通过该方法大面积生长外延层而达到最佳化.本文重点介绍上述技术的生长机理、实验系统简图、典型工艺以及在器件制造上的应用.     

Ku波段脉冲耿氏振荡器

文章描述了脉冲耿氏管、微波电路和脉冲调制器的结构和设计原则;给出了Ku波段脉冲耿氏振荡器的研制结果:在13～15GHz范围内,脉冲功率大于5W,工作比≤1％,最大效率为5％。