毫米波带状注电子枪的设计方法

利用理论分析和仿真模拟相结合的方法对带状电子注的产生进行了系统的研究,并提出了一种带状注电子枪的设计方法.首先通过理论分析,提出了一种计算带状注电子枪结构参数的迭代算法,即根据注电压、注电流、电子注注腰处半厚度、阴极半厚度和阴极宽度,计算出带状注电子枪的阴极柱面半径、阴阳极间距、阳极柱面半径和射程等主要参数;在此基础上,通过仿真模拟,为毫米波真空电子器件设计了一种带状注电子枪.     

无磁蒙乃尔材料漏气原因分析

微波真空电子器件广泛应用于雷达、卫星通信、电子加速器等方面。蒙乃尔材料也称镍一铜合金,其常被应用于微波真空电子器件,其性能好坏将直接影响微波源的可靠性和寿命。但在用银铜焊料对蒙乃尔材料进行钎焊封接时经常会发生漏气现象,直接给应用者造成损失。针对这一现象做了一系列的试验,并结合相关的理论知识对此现象进行了详细的分析,从工艺控制角度来探寻适宜可行的解决方法。介绍了在封接工艺中蒙乃尔材料合金退火的重要性及目的,并分析得出了蒙乃尔材料合金退火的温度及气氛。     

Towards neuromorphic electronics: Memristors on foldable silicon fabric

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex׳s folded pattern for ultra-compact design.     

Surface and bulk structuring of materials by ripples with long and short laser pulses: Recent advances

Ripples are formed on the surface of solid materials after interaction with laser pulses of high intensity/irradiance. When ultra-short sub-1 ps laser pulses are used, the observed morphology of ripples on surfaces becomes much more complex as compared with ripples formed by long laser pulses. Uniquely for the short laser pulses, ripples can be formed in the bulk. A better understanding of the fundamentals of light-matter interaction in ripples formation is strongly required. Experimentally observed ripples and dependence of their parameters on laser fabrication conditions and material properties are summarized first. Then, a critical review of relevant ripple formation mechanisms is presented, discussed, and formation conjectures are presented.     

Role of PbSe Structural Stabilization in Photovoltaic Cells

Semiconductor nanocrystals are promising materials for printed optoelectronic devices, but their high surface areas are susceptible to forming defects that hinder charge carrier transport. Furthermore, correlation of chalcogenide nanocrystal (NC) material properties with solar cell operation is not straightforward due to the disorder often induced into NC films during processing. Here, an improvement in long‐range ordering of PbSe NCs symmetry that results from halide surface passivation is described, and the effects on chemical, optical, and photovoltaic device properties are investigated. Notably, this passivation method leads to a nanometer‐scale rearrangement of PbSe NCs during ligand exchange, improving the long‐range ordering of nanocrystal symmetry entirely with inorganic surface chemistry. Solar cells constructed with a variety of architectures show varying improvement and suggest that triplet formation and ionization, rather than carrier transport, is the limiting factor in singlet fission solar cells. Compared to existing protocols, our synthesis leads to PbSe nanocrystals with surface‐bound chloride ions, reduced sub‐bandgap absorption and robust materials and devices that retain performance characteristics many hours longer than their unpassivated counterparts.     

Self‐Powered Trace Memorization by Conjunction of Contact‐Electrification and Ferroelectricity

Triboelectric nanogenerator (TENG) is a newly invented technology that can effectively harvest ambient mechanical energy from various motions with promising applications in portable electronics, self‐powered sensor networks, etc. Here, by coupling TENG and a thin film of ferroelectric polymer, a new application is designed for TENG as a self‐powered memory system for recording a mechanical displacement/trace. The output voltage produced by the TENG during motion can polarize the dipole moments in the ferroelectric thin film. Later, by applying a displacement current measurement to detect the polarization density in the ferroelectric film, the motion information of the TENG can be directly read. The sliding TENG and the single‐electrode TENG matrix are both utilized for realizing the memorization of the motion trace in one‐dimensional and two‐dimensional space, respectively. Currently, the ferroelectric thin film with a size of 3.1 mm² can record a minimum area changing of 30 mm² and such resolution can still be possibly improved. These results prove that the ferroelectric polymer is an effective memory material to work together with TENG and thereby the fabricated memory system can potentially be used as a self‐powered displacement monitor.     

真空电子器件用Ga基堵漏钎料的研究

研制成功三种无氧铜真空电子器件堵漏钎料。应用扫描电镜、能谱分析仪、微观硬度仪,研究了三种钎料形成的扩散接头界面连接情况,进行了不同扩散温度下的对比试验。结果表明：三种钎料都能与无氧铜形成良好的相互扩散效果;在三种钎料中,Ga-15In钎料与无氧铜形成的相互扩散效果最好;在不同扩散温度下进行试验,Ga-15In钎料在650℃达到与无氧铜形成的相互扩散效果最佳。     

HEMT器件小信号模型研究

提出一种AlGaAs/GaAs HEMT器件沟道电荷新模型,该模型用一个通用解析函数中系数的不同值来描述二维电子气(2DEG)和AlGaAs层中的电子浓度。在小信号特性上,除考虑了2DEG层外,又在考虑了AlGaAs层、速度饱和、饱和区沟道长度调制效应和源、漏串联电阻RS和RD等效应的基础上,推导出直流特性、跨导、输出电导和栅电容的解析表达式。仿真说明,在较大的栅、漏压范围内,该模型的理论值与实验结果符合良好。     

周期栅格中的场与COM参量提取

从耦合模式模型(COM)方程出发,得到周期短路栅格与开路栅格中场分布的解析表达式,利用给出COM参量,研究了场分布的特征,通过对解析表达式和典型频率的场分布图形的研究,找到与场分布有关的一些特征量,并将这些特征量与COM参量通过一定的解析关系联系起来.在用其他方法得到了周期栅格中的场分布时,可拟合场分布包含的这些特征量从而得出对应的COM参量.该文给出了一种从场分布提取随频率变化的COM参量的方法.     

激光外差干涉中声光器件非互易特性研究

针对声光器件存在的非互易现象导致光强衰减影响衍射效率并降低激光外差干涉效率的问题,进行了一种基于声光驱动100MHz时声光器件非互易效应对激光外差干涉影响的研究。以光束衍射实验为主体,结合光阑、TeOa晶体对声光器件非互易值进行测量,利用光功率计获得测量过程中的器件非互易数值,在不同驱动频率下分析衍射效率分布情况;并利...