Exploring Reversible Quenching of Fluorescence from a Pyrazolo[3,4‐b]quinoline Derivative by Protonation

Pyrazolo[3,4‐b]quinoline derivatives are reported to be highly efficient organic fluorescent materials suitable for applications in light‐emitting devices. Although their fluorescence remains stable in organic solvents or in aqueous solution even in the presence of H₂O, halide salts (LiCl), alkali (NaOH) and weak acid (acetic acid), it suffers an efficient quenching process in the presence of protic acid (HCl) in aqueous or ethanolic solution. This quenching process is accompanied by a change in the UV spectrum, but it is reversible and can be fully recovered. Both steady‐state and transient fluorescence spectra of 1‐phenyl‐3,4‐dimethyl‐1H‐pyrazolo‐[3,4‐b]quinoline (PAQ5) during quenching are measured and analyzed. It is found that a combined dynamic and static quenching mechanism is responsible for the quenching processes. The ground‐state proton‐transfer complex [PAQ5 ??? H⁺] is responsible for static quenching. It changes linearly with proton concentration [H⁺] with a bimolecular association constant K_S=1.95 M ^?1 controlled by the equilibrium dissociation of HCl in ethanol. A dynamic quenching constant K_D=22.4 M ^?1 is obtained by fitting to the Stern–Volmer equation, with a bimolecular dynamic quenching rate constant k_d=1.03×10⁹ s^?1 M ^?1 under ambient conditions. A change in electron distribution is simulated and explains the experiment results.     

Inclusion of Carboxyl Function Inside of Cucurbiturils and its Use in Molecular Switches

We have prepared organic guest molecules in which two pyridinium rings are connected through an aromatic/aliphatic bridge bearing a carboxyl group. The supramolecular interactions between these guests and macrocyclic hosts cucurbit[7]uril ( CB7 ) and cucurbit[8]uril ( CB8 ) has been studied. We have demonstrated that the binding modes of the complexes depend on the type of central bridge present in the guest molecules and the size of the macrocycle. We have also showed that the binding mode between cucurbiturils and guests with aromatic bridges is pH independent. On the other hand, a guest containing an aliphatic bridge and CB7 formed a pseudorotaxane, which behaved as a pH‐driven molecular switch.     

彩色多普勒超声对宫腔疾病的诊断

研究了微型三坐标测量仪中由压电陶瓷器件+柔性铰链构成的微动系统.根据该微动系统对定位精度的要求及微动系统具有迟滞、蠕变等强非线性的特点,该文提出一种神经网络自适应模糊推理比例微分积分(PID)位置控制系统,并进行了控制系统结构研究和实验分析.跟踪实验结果表明,智能PID控制能有效改善系统的动态和静态性能;定位精度实验表明两轴双向定位精度较传统PID控制有大的提高,达到了设计要求.     

解析24 GHz频段短距雷达设备电磁兼容欧洲标准

解读ETSI EN 302288-1中对测试电源的极端电压和环境的温、湿度要求。介绍短距离设备的频率范围、功率密度、杂散发射与带外发射等测量参数,以及电波暗室中辐射测量的通用测量方法和场地要求。     

宽禁带半导体功率器件在现代雷达中的应用

现代战争对雷达性能的要求日益提高,基础材料、工艺和元器件的飞速发展,促进了雷达技术的不断进步.宽禁带半导体功率器件的出现,使得雷达发射机乃至雷达性能的大幅度提升成为可能.文中简要介绍了现代雷达对大功率发射机的迫切需求,结合宽禁带半导体器件的特点,阐述了该类器件的发展现状,给出了发展趋势及应用展望.     

The Effect of Nanoparticle Shape on the Photocarrier Dynamics and Photovoltaic Device Performance of Poly(3‐hexylthiophene):CdSe Nanoparticle Bulk Heterojunction Solar Cells

The charge separation and transport dynamics in CdSe nanoparticle:poly(3‐hexylthiophene) (P3HT) blends are reported as a function of the shape of the CdSe‐nanoparticle electron acceptor (dot, rod, and tetrapod). For optimization of organic photovoltaic device performance it is crucial to understand the role of various nanostructures in the generation and transport of charge carriers. The sample processing conditions are carefully controlled to eliminate any processing‐related effects on the carrier generation and on device performance with the aim of keeping the conjugated polymer phase constant and only varying the shape of the inorganic nanoparticle acceptor phase. The electrodeless, flash photolysis time‐resolved microwave conductivity (FP‐TRMC) technique is used and the results are compared to the efficiency of photovoltaic devices that incorporate the same active layer. It is observed that in nanorods and tetrapods blended with P3HT, the high aspect ratios provide a pathway for the electrons to move away from the dissociation site even in the absence of an applied electric field, resulting in enhanced carrier lifetimes that correlate to increased efficiencies in devices. The processing conditions that yield optimum performance in high aspect ratio CdSe nanoparticles blended with P3HT result in poorly performing quantum dot CdSe:P3HT devices, indicating that the latter devices are inherently limited by the absence of the dimensionality that allows for efficient, prolonged charge separation at the polymer:CdSe interface.     

Enhanced Thermal Stability and Efficiency of Polymer Bulk‐Heterojunction Solar Cells by Low‐Temperature Drying of the Active Layer

This study addresses two key issues, stability and efficiency, of polymer solar cells based on blended poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) by demonstrating a film‐forming process that involves low‐temperature drying (?5 °C) and subsequent annealing of the active layer. The low‐temperature process achieves 4.70% power conversion efficiency (PCE) and ～1250 h storage half‐life at 65 °C, which are significant improvements over the 3.39% PCE and ～143 h half‐life of the regular room‐temperature process. The improvements are attributed to the enhanced nucleation of P3HT crystallites as well as the minimized separation of the P3HT and PCBM phases at the low drying temperature, which upon post‐drying annealing results in a morphology consisting of small PCBM‐rich domains interspersed within a densely interconnected P3HT crystal network. This morphology provides ample bulk‐heterojunction area for charge generation while allowing for facile charge transport; moreover, the P3HT crystal network serves as an immobile frame at heating temperatures less than the melting point (T_m) of P3HT, thus preventing PCBM/P3HT phase separation and the corresponding device degradation.     

立方相SiC MEMS器件研究进展

主要介绍了近年来国内外出现的有市场推广潜力的立方相碳化硅(3C-SiC)MEMS器件,详细描述了其中一些典型器件的基本结构、加工工艺及初步测试结果,并指出了要想提高器件的可靠性,需要获得低残余应力、低应力梯度的薄膜材料,应当采用合适的刻蚀方法,还需保证金属与碳化硅欧姆接触的稳定性,同时高温引线键合与封装工艺亦不能忽视。随着材料生长和加工成本的不断降低,3C-SiC基MEMS器件将会逐步走向商品化。     

Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric

Metal-oxide-semiconductor (MOS) devices, using a Si substrate and a thermal SiON film as the gate dielectric on a Ge layer, have been physically and electrically characterized. The small frequency dispersion and negligible hysteresis demonstrate very few oxide traps. The efficiency of Ge surface passivation is evidenced by the acceptable interface trap density of 7.08 × 10¹¹ cm⁻² eV⁻¹ close to midgap, which is critical for the enhancement of the carrier mobility in MOSFET devices. On the other hand, for the thermal SiON film, a higher permittivity of 4.86 can be achieved by NH₃ nitridation and a subsequent N₂O treatment of an as-grown SiO₂ film without compromising its leakage current. The conduction mechanism is confirmed to be Fowler-Nordheim (F-N) tunneling with extracted electron barrier height of 2.71 eV. Combining with these promising properties, the SiON film shows a great potential to further boost the performance of Ge MOSFETs. Most importantly, without using a Ge substrate, the SiON film on a Ge layer can be formed by the process fully compatible with incumbent ultra-large-scale integration (ULSI) technology, and hence, providing an economic way of fabricating high-performance Ge MOSFETs.     

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

The influence of the width of a lattice-matched Al_0.82In_0.18N/GaN single quantum well (SQW) on the absorption coefficients and wavelength of the intersubband transition (ISBT) has been investigated by solving the Schrödinger and Poisson equations self-consistently. The wavelength of 1—2 ISBT increases with L, the thickness of the single quantum well, ranging from 2.88 μm to 3.59 μm. The absorption coefficients of 1—2 ISBT increase with L at first and then decrease with L, with a maximum when L is equal to 2.6 nm. The wavelength of 1—3 ISBT decreases with L at first and then increases with L, with a minimum when L is equal to 4 nm, ranging from approximately 2.03 μm to near 2.11 μm. The absorption coefficients of 1—3 ISBT decrease with L. The results indicate that mid-infrared can be realized by the Al_0.82In_0.18N/GaN SQW. In addition, the wavelength and absorption coefficients of ISBT can be adjusted by changing the width of the SQW.