Dynamic chemical devices: modulation of photophysical properties by reversible, ion-triggered, and proton-fuelled nanomechanical shape-flipping molecular motions

The terpy-derived (terpy=terpyridine) ligand 1 has an extended W shape in which the two appended photoactive pyrenyl groups are held apart. On binding of a zinc(II) ion with a terpy group, ligand 1 is converted into complex 2 whereby it adopts a U shape, thus stacking the aromatic units. This structural modification leads to a very pronounced change in photophysical properties: from a highly fluorescent free ligand to a very weakly emitting complex. The W/U structural switching can be reversibly induced by the addition of a competitive tren ligand, which binds and releases a zinc(II) ion under protonation/deprotonation cycles, thus leading to oscillations in light emission. Therefore, the present system performs periodic modulation of optical output through a nanomechanical shape-flipping motion, triggered by metal ion binding and fuelled by acid-base neutralisation energy. Overall, it represents an ion-triggered opto-mechanical supramolecular device.     

突破间接带局限创新Si基激光器

Si基高效发光与受激光发射是Si基光子学突破性发展的关键课题,它的实现对Si基微电子学的发展有深远的重大意义．由于受到天然Si材料间接带能带结构的限制,Si材料的发光效率极低,更谈不上可实现受激光发射,人工改性就成为当代研究、开拓的主要途径．新的Si基直接带体材料(如β-FeSi2等)的探索,Ge／Si量子阱、超晶格、量子点的能带工程介观改性,子带发光跃迁的探索,异类元素插入短周期超晶格中的化学键改性,以及SiO2高浓度nc-Si的生成和高激活度稀土离子的掺入发光等已开展了多途径的研究,不同程度上取得了重要的进展,一种MIS结构电子隧道注入高效发光器件已在SiO2：RE MOS结构中实现．运用激光器件物理的深入设计和新的器件技术的引入,可以预计本世纪初叶,对实现Si基激光器的奢望将会成为现实,无疑它对Si基光子学、Si基集成光电子学乃至信息高科技的发展将作出历史性的巨大贡献．     

White organic light-emitting devices

In view of their potential applications in flat panel displays, organic light-emitting devices have attracted much attention in the past decade. A challenging target in this field is to realize full color display applications. One of the approaches proposed for these is combining white emission with color filters, where efficient and pure white emission (especially at high brightness) is necessary. In this paper, three kinds of white organic light-emitting devices with different structures and materials are fabricated and their characteristics are discussed.