Isometric crystallization of stretched poly(e-caprolactone) sheets for medical applications

Low melting temperature thermoplastic sheets based on poly(e-caprolactone) (PCL) can be formed directly on the patient and are used as immobilization device (mask) in the radiation therapy. The immobilization mask is allowed to harden in isometric conditions on the body at room temperature. A new method for isometric crystallization kinetics of thermoplastic polymer sheets is developed using a tensile-strength instrument. The isometric crystallization method allows investigating the shrinkage force on time of crystallization of stretched samples of thermoplastic polymer sheets or immobilization medical devices. The dependence of the shrinkage force on time is described by Avrami equation and the kinetics parameters of isometric crystallization are calculated. This revised version was published online in July 2006 with corrections to the Cover Date.     

巯基卟啉自组装膜的制备及应用研究进展

详细介绍了巯基卟啉自组装膜的几种制备方法,评述了不同制备方法的优缺点;对卟啉自组装膜在电荷转移、分子氧电催化、分子光电器件等领域的研究进展进行了评述,引用文献54篇。     

一种动态红外隐身技术的实现与分析

提出了动态红外隐身技术的一种实现方案.综合考虑地面目标和地表环境的热红外特征,分析了目标动态红外隐身的基本理论,并利用调温器件阵列实现目标的动态红外隐身,最后给出动态红外隐身实验的结果和分析.     

金属键合技术及其在光电器件中的应用

系统阐述了金属键合的发展概况、基本工艺和方法、表征技术及其在光电器件中的应用.金属键合制备光电器件的一般工艺流程分为三步:蒸镀金属薄膜、键合、腐蚀去除衬底,列举了常用的金属键合方法及其工艺条件;并着重论述了该技术在光电器件特别是垂直腔面发射激光器(VCSEL)器件结构制作中的应用.金属键合可以实现衬底倒扣和改善器件热学性能,而对器件原有的光学性质影响不大.     

铌酸锂干法刻蚀的研究进展

概述了近年来国内外对铌酸锂(LN)晶体干法刻蚀技术的研究进展。根据刻蚀原理和特点,现有的LN干法刻蚀技术可分为等离子体刻蚀、激光微加工技术和Ti扩散电化学刻蚀。对各刻蚀方法及其研究进展进行了总结,分析了不同干法刻蚀方法之间的区别和联系,并对各方法中存在的问题进行了探讨。其中等离子体刻蚀技术由于其良好的图形转移特性,得到了最广泛的应用;激光微加工技术在制备光子晶体结构和微光栅结构中具有独特的优势;Ti扩散电化学刻蚀LN为制备大尺寸的LN基结构指明了新的方向。     

MPNIM结构光致变电容效应

本文报告了作者之一首先发现的MPNIM(金属-P型半导体-N型半月比-绝缘体-金属)结构的光致变电容效应。基于该效应已研制出新器件:半导体双向光控变容器.新器件的电容值与入射光强的关系,光谱响应特性,频率特性,C-V特性,温度特性已被研究.     

新型低压高效叠层有机白光器件

以Bphen:Li/WO3作为电荷产生层制备了低压、高效有机叠层白光器件. 实验中,首先在器件中引入高导电性的载流子注入和传输层,有效降低了器件的驱动电压,然后通过电荷产生层垂直堆叠两个低压白光器件,获得了低压、高效有机叠层白光器件. 叠层器件性能与单发光单元的器件相比较,其亮度及效率均有大幅提高,叠层器件的最大电流效率达到了17cd/A,在相同的电流密度下,叠层器件的效率约为传统器件的2.3倍,同时由于在叠层结构中引入了高导电性的载流子传输层,有效降低了器件的驱动电压,显著改善了白光器件的流明效率.叠层器件的流明效率相对于单发光单元器件提高了53%.     

On the origin of decay of spin current with temperature in organic spintronic devices

This article addresses the most challenging question facing the organic spintronics community today – what causes the universal loss of Giant Magnetoresistance (GMR) signal in organic spin valve devices made with different spin-polarized electrodes and organic semiconductor spacers? Careful analysis of our own and other experimental results available in literature indicate that transition of transport from polaron tunneling limit (suggested by the variable range hopping model) to thermally activated hopping limit (in the temperature range of 40–58 K) marks the most significant decrease of spin relaxation in organic semiconductors. With increasing occupancy of the available hopping sites by the thermally activated carriers, chances of spin flip inside the organic semiconductors increases significantly causing fast spin relaxation in the spin-valves.     

Progress in Group Ⅲ nitride semiconductor electronic devices

Recently there has been a rapid domestic development in groupⅢnitride semiconductor electronic materials and devices.This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China,which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures,and eventually achieve high performance GaN microwave power devices.Some remarkable progresses achieved in the program will be introduced,including those in GaN high electron mobility transistors(HEMTs) and metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) with novel high-k gate insulators,and material growth,defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication,and quantum transport and spintronic properties of GaN-based heterostructures,and highelectric -field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.     

以陶瓷厚膜为绝缘层的绿色薄膜电致发光器件

首次报道了采用高介电常数的陶瓷厚膜作绝缘层、ＺｎＳ∶Ｅｒ作发光层的绿色薄膜电致发光器件（ＣＴＦＥＬ）。器件结构为陶瓷基片／内电极／陶瓷厚膜／发光层（ＺｎＳ∶Ｅｒ）／透明电极（ＺｎＯ∶Ａｌ）。发光层是用电子束蒸发制备的,透明电极是采用溅射法制备的。器件在市电频率驱动下发出明亮的绿光,研究了器件的亮度－电压和效率－电压等特性。