Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

激光二极管线阵光束变换研究

推导出激光二极管线阵光束通过透镜系统的光强分布表达式，分析了出射光束的传输特性，设计一种凹柱透镜的光束变换系统得到一维均匀光强分布。此外，给出扩展角宽度的计算公式。     

填充等离子体波纹波导色散曲线计算软件的设计

从一种正弦波纹波导慢波结构的色散方程理论推导出发,设计了在不同结构参数、有无电子注以及填充不同等离子体浓度的情况下,计算其色散曲线的专用软件.该软件除了具有传统的数值计算功能外,提供了一个较为友好的图形用户界面.该界面直接显示该波纹波导的结构图,同时用户可以通过该界面很方便地修改各主要参数,比较不同情况下得到的色散曲线,以获得优化的参数选择.     

Ionic conductivity of epitactic MBE-grown BaF2 films

We studied parallel conductivities of pure BaF₂ films with thicknesses ranging from 35 to 300 nm, epitaxially grown on Al₂O₃(0 1 2) substrates by molecular beam epitaxy technique. The overall conductivities of the films are found to increase with decreasing thickness. The detailed investigation of the overall conductance as a function of the thickness permits the deconvolution of bulk and boundary effects, the latter being attributed to distinct space charge effects in the interface between BaF₂ film and Al₂O₃ substrate. The (extrinsic) Debye length (λ) is estimated to be about 8 nm at T=593 K, which corresponds to an impurity content of 10¹⁸/cm³ (singly ionized dopant assumed). This is consistent with the fact that we observed a constant boundary contribution for all investigated films (film thickness >4λ). It is also consistent with the Debye length observed in a previous report on CaF₂/BaF₂ heterolayers fabricated by the same technique, in which the low temperature enhancement was also attributed to space charges in BaF₂ [Nature 408 (2000) 946]. Only at low temperatures (below 370 °C), the conductance seems to be influenced by strain effect.     

同轴双无衍射光的理论与实验

提出同轴双无衍射光的概念。如果两束汇聚角略有不同的同轴无衍射光同时存在，则它们相互之间叠加干涉后产生一种纵向呈周期变化的光场结构，这是一种新的光束空间分布，这种光束在横向仍是一种同心环光斑，可用于精密对准。而在不同纵向位置，这些同心环的强度分布是不同的，且是周期性变化的。同轴双无衍射光的轴向周期性可用于沿光束传播方向的定位。文中提出了双环缝法、分段圆锥透镜法、正弦相位环光栅法等实现同轴双无衍射光的理论与实验方法，分析了同轴双无衍射光的横向与纵向传播的衍射光斑特性，理论计算与实验测量的结果基本相符合。     

集中荷载下叠合梁抗剪强度

本文对低叠合面钢筋破简支在合梁二阶段受力的斜截面抗剪性能进行了试验研究，并运用非线性有限元分析和试验实测数据，得出了一个适合于集中荷载下高低叠合面叠合梁的抗剪强度计算公式．     

Generalized Christoffel functions and error of positive quadrature

The author gives some upper and lower bounds for the generalized Christoffel functions related to a Ditzian-Totik generalized weight. As an application, an error estimate of Gauss quadrature formula inL ₁-weighted norm is derived.Dedicated to Prof. Luigi Gatteschi on the occasion of his 70th birthdayWork sponsored by MURST 40%.     

激光光束质量诊断技术的进展

本文介绍了激光光束质量诊断技术近年来的进展，以及国际标准化组织推荐的聚集光束测量法，指出了该技术的发展方向。     

用基函数神经网络实现多阈值图象分割

本文介绍了一种用基函数神经网络实现多阈值图象分割的新方法。它从函数逼近的角度研究基于灰度直方图的多阈值分割问题，提出了一种模糊反向传播学习算法，采用该算法的高斯基函数网络能够准确检测直方图中包含的子区域和它们的分布函数，而且速度很快。实验表明本文的方法在实际图象分割中是有效的。     

Pyrolysis of tertiarybutylphosphine at low pressure

The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy (CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH₂ and C₄H₉ radicals. These undergo subsequent reactions to form the stable products C₄H₈, PH₃ and H₂, with smaller amounts of P and P₂ being produced. The production of the sub-hydride PH₂ using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing the amount of carbon incorporated into the growing epitaxial layer.