径向基函数神经网络荧光光度法同时测定痕量铝、镓、铟、铊

以径向基网络(RBF)对荧光光谱严重重叠的Al3 、Ga3 I、n3 、Tl3 四组分混合体系同时进行测定。通过正交设计安排样本,在激发波长390 nm下,测定446~615nm的发射光谱。以34个特征波长处的荧光强度值作为网络特征参数,经网络训练和计算得出Al3 、Ga3 、In3 、Tl3 四者的平均回收率分别为99.07%、103.49%、98.72%、95.04%,在时间和精度上都比LMBP网络优越。     

Fabrication of red-emitting CaAlSiN3: Eu2+ through phosphor-in-glass approach for application in rear combination lamp

In this study, the red-emitting phosphor-in-glass (PiG) using the CaAlSiN₃: Eu²⁺ (CASN) phosphor is reported for the first time. The CASN: Eu²⁺ PiG samples with a maximum luminous flux of 25.1–29.4 for l minute at laser power of 1 W/mm² was obtained using a low-temperature glass frit and GPS furnace. Despite the increase in the phosphor from 15 to 25 wt%, the PiG produced at low temperature of 380 °C showed robust properties. Finally, the red PiG module designed for rear lamp applications maintains over 90% lumens for a minute at 350 mA and achieves an intense red light having a color temperature of 4589 K.     

丙烷在无机膜反应器中的芳构化

研究了在固定床反应器和膜反应器中的丙烷芳构化，考察了ＨＺＳＭ－５担载的Ｇａ和Ｐｔ－Ｇａ催化剂对反应的影响。结果表明，采用无机膜反应器可以提高丙烷芳构化选择性，从而提高芳烃收率达１０％以上。在膜反应器中，低碳烷烃选择性降低，烯烃选择性增强。固定床相比，膜反应器在低温时对芳构化反应的促进作用最为显著，但是随着温度升高，其促进作用减弱。     

2-乙基己醇萃取-原子吸收光谱法测定微量镓

在７．０ｍｏｌ／Ｌ盐酸介质中,在抗坏血酸存在下,用２－乙基己醇萃取试样溶液中的酸性铬蓝Ｋ－镓的络合物,然后用３０ｇ／Ｌ的硫脲将络合物反萃取到水相中,用ＦＡＡＳ法测定镓,据此建立了萃取反萃取－ＦＡＡＳ法测定微量镓的新方法。方法线性范围为０～６０．０ｍｇ／Ｌ,灵敏度为０．２８ｍｇ／Ｌ／１％,已用于铝酸钠溶液中微量镓的测定。     

Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy

Porous templates were fabricated by hydrogen-etching metal organic chemical vapor deposited gallium nitride (GaN); these templates were used as substrates for the growth of GaN via hydride vapor phase epitaxy. The influence of annealing porous templates on GaN growth behavior was investigated. GaN epitaxied on the unannealing porous template followed the Volmer–Weber mode with the void preserved at the growth plane, whereas the GaN film on the annealed porous templates exhibited a layer-by-layer growth and filled the porous material. The GaN crystal quality was characterized by high-resolution XRD and CL, the results indicated that GaN grown with pores preserved at the template interface had a lower dislocation density than that grown with pores filled, and the best GaN film had a TD density of 10⁴ cm⁻².