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81.
82.
以GaP为靶材、Ar为工作气体,采用射频磁控溅射法制备了厚层GaP膜.对沉积过程中的辉光放电等离子体进行了发射光谱诊断,发现只有ArⅠ发射谱线.研究了工艺参数对发射谱线强度的影响规律,并在此基础上通过同时改变射频功率、Ar气流量及工作气压,使ArⅠ发射谱线强度保持相同.发现通过增大射频功率、减小工作气压而保持ArⅠ发射谱线强度不变可以提高GaP膜的沉积速率,并使GaP膜的沉积工艺参数得到优化.在优化后的工艺参数下制备出了符合化学计量比、红外透过性能好的厚层GaP膜.
关键词:
GaP薄膜
射频磁控溅射
等离子体发射光谱
红外透射 相似文献
83.
Oleksandr Romanyuk Oliver Supplie Agnieszka Paszuk Jan Philipp Stoeckmann Regan George Wilks Jakob Bombsch Claudia Hartmann Raul Garcia-Diez Shigenori Ueda Igor Bartoš Ivan Gordeev Jana Houdkova Peter Kleinschmidt Marcus Bär Petr Jiříček Thomas Hannappel 《Surface and interface analysis : SIA》2020,52(12):933-938
We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested. 相似文献
84.
Jun-ichi Nishizawa 《Proceedings of the Japan Academy. Series B, Physical and biological sciences》2004,80(2):74
In 1967, a THz wave was generated for the first time using a free electron laser; however, the device was too expensive to be used widely. The author published the idea of THz wave generation by use of resonating vibration between paired atoms in polymer or crystal in 1965, and succeeded with K. Suto to generate a 12 THz wave in 1983. In 1999, the author invited K. Kawase and H. Ito to Sendai RIKEN to realize the concept by use of dielectrics; in 2000, they succeeded in realizing a sweep generator. In the same year, the author suggested the idea of applying the THz wave to cancer diagnosis and treatment, particularly by improving heating selectivity: This enhances the effect of medications by raising only the temperature of the cancer itself, not of the surrounding atomic pairs in the neighborhood. These applications are expected to spread quickly as powerful methodology based on molecular science. The reason for this is that the much improved waveform generated enables higher selectivity, allowing the detection of the existence of abnormal polymer near the paired atoms by measuring resonating frequency between paired atoms. 相似文献
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The paper recalls some major progress made over the past decade in the understanding of dopant diffusion in compound semiconductors. However, existing models to describe the diffusion behaviour of acceptors such as e.g. Zn and Cd in III–V compounds reveal serious discrepancies with respect to the whole body of available experimental data. We present new experiments on GaP and an alternative theoretical approach which both may contribute to find a consistent interpretation. 相似文献
88.
利用X射线光电子能谱(XPS)深度剖析方法对气体源分子束外延(GS-MBE)生长的GaP/Si异质结构进行了详细的分析.其结果表明:(1)外延层内Ga、P光电子峰与GaP相相符,且组份分布均匀,为正化学比GaP.(2)在不同富PH3流量条件下生长的样品,其表面富P量稍有不同,而GaP外延层内的测试结果相同.界面也未见有P的富集.(3)XPS剖析至GaP/Si界面附近,随外延层界面向衬底过渡,Si2p光电子峰向高结合能方向移动,且其结合能高于原衬底p型Si,接近于n型Si.但Ga、P光电子峰未发现有明显能移.(4)在XPS检测限内,外延层内和界面都未见有C、O等沾污.这一研究表明:无污染的本底超高真空、相对过剩的富3生长环境、成功的Si衬底清洗方法等措施保证了GS-MBE生长出正化学比GaP/Si外延异质结构. 相似文献
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利用基于密度泛函理论(DFT),采用赝势平面波方法和广义梯度近似法(GGA)研究了闪锌矿ZB结构和盐岩RS结构GaP的基态电子结构、光学性质,根据能带理论初步研究GaP基态能带结构、总态密度(DOS)和分波态密度(PDOS),并计算出吸收系数,反射率,复介电函数,复折射率及能量损失函数。 相似文献