Green emitting Zn-diffused LPE GaP diodes

The growth of liquid phase epitaxial (LPE) layers of n-type GaP on GaP substrates was investigated using a multi-wafer growth system constructed of fused quartz which had provisions for gas phase saturation and doping of the gallium melt. The effect of growth temperature, substrate orientation, doping level, and repeated use of the same melt on the properties of zinc diffused electroluminescent diodes fabricated from these epitaxial layers were investigated. After an initial increase, the carrier concentration remained relatively constant (1.7 × 10¹⁷/cc) throughout a series of eighteen runs from the same melt. Using conventional commercial techniques, zinc diffused diodes with efficiencies of 0.05% at 30A/cm² and a brightness of 1200 fL at 10A/cm² were produced. These diodes had a limited area n and p-type contact and had an epoxy dome. Layers grown on the 〈 111 〉P orientation had the best surface quality whereas those grown on the 〈 100 〉 plane incorporated less background impurities. The use of relatively low growth starting temperatures (∼ 920°C) was found to minimize the background impurity of the layers and the substrate surface deterioration due to the reaction with ammonia. This work was, in part, sponsored by the Air Force Materials Laboratory under the direction of Mrs. E. H. Tarrants, contract number F33615-71-C-1621     

Preferential etching of dislocations and stacking faults in gallium phosphide

A combination of optical microscopy and transmission electron microscopy has been used to provide direct evidence that pits formed by the action of a solution of 3 HF:1 H₂O₂ on epitaxial and substrate GaP material close to the (001 ) orientation are associated with dislocations. The formation of different pit shapes can be correlated with previous work on etch pits in GaP, namely the formation of D and S pits. Grooves have been produced on certain crystallographic orientations which are associated with certain types of stacking faults. It is now possible to use this etch for a direct count of the dislocation density in (001) GaP and to indicate the extent of stacking faults.     

Au对GaP接触界面形成及其特性

借助Ｘ射线衍射和扫描电子显微镜研究了Ａｕ和ＧａＰ接触体系界面特性的温度依赖性。测量表明,既使在低于４００℃温度下界面反应也会生成少量的Ａｕ－ＧａＰ金属间化合物,它的主要成份是（ＧａＡｕ）Ｈ,Ｇａ２Ａｕ,在较高温度５５０℃合金条件下界面反应生成少量的ＧａＰ化合物表面发生分解,界面反应增增并伴随着快速的原子间互扩散,大量Ｇａ原子向外迁移进入Ａｕ膜复盖层。同时,Ａｕ原子也内扩散进入ＧａＰ表面,Ａｕ－ＧＡ     

Mg在InGaAlP及GaP材料中的掺杂行为

利用 SIMS分析技术 ,研究了在 In Ga Al P和 Ga P材料中 ,MOCVD工艺参数对 Mg的掺杂行为的影响 .实验结果表明 ,在较高温度下 ,Mg在生长表面的再蒸发决定了 Mg的掺杂浓度随衬底温度增加呈指数下降 ;而当载流子浓度饱和时 ,杂质 Mg在材料中的置换填隙机制使得 Mg的激活率随 Cp2 Mg流量的再增加反而下降 .同时通过计算得到 Mg在 In Ga Al P及 Ga P中的再蒸发激活能分别约为 0 .9e V和 1.1e V     

Second-order nonlinear optical materials for efficient generation and amplification of temporally-coherent and narrow-linewidth terahertz waves

We have considered forward and backward optical parametric oscillation and amplification, and difference-frequency generation for efficiently generating and amplifying terahertz waves in several second-order nonlinear optical materials. We have used a single crystal of CdSe as an example. We have also investigated GaSe, periodically-poled LiNbO₃ and LiTaO₃, and diffusion-bonded-stacked GaAs and GaP plates. The advantage of using birefringence in CdSe and GaSe is tunability of the output terahertz frequency. Furthermore, both CdSe and GaSe can be used to achieve the backward parametric oscillation without any cavity. On the other hand, in periodically-poled LiNbO₃ and LiTaO₃, one can take advantage of large diagonal elements of second-order nonlinear susceptibility tensor. In the diffusion-bonded-stacked GaAs and GaP plates, quasi-phase matching can be achieved by alternatively rotating the plates. We have shown that it is feasible to achieve forward optical parametric oscillation in the THz domain using these plates. The advantage of using coherent parametric processes is possibility of efficiently generating and amplifying temporally-coherent and narrow-linewidth terahertz waves. Compared with a noncollinear configuration, by using the parallel wave propagation configurations, the conversion efficiency can be higher because of longer effective interaction length among all the waves.     

Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density

Epitaxial transparent-substrate light-emitting diodes (ETS-LEDs) have been fabricated on optimized graded buffers of In_xGa_1−xP on GaP (∇_x[In_xGa_1−x]P/GaP) that feature controlled threading dislocation densities of 3×10⁶ cm⁻². The ETSLEDs show increasing efficiency from 575 nm to 655 nm, in marked contrast to previous reports where performance drops above 600 nm, and feature the lowest spectral widths ever reported in ∇_x[In_xGa_1−x]P/GaP. The improvement over earlier reports is attributed to large mean dislocation spacings in optimized ∇_x[In_xGa_1−x]P/GaP, which are an order of magnitude greater than the mean carrier diffusion length. A slight performance decline remains at 655 nm, but the overall performance of this first generation of ETS-LEDs is promising.     

Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

We describe a modified commercial OMVPE reactor that incorporates quadrupole mass spectrometry (QMS) with a broadband parallel-processing optical spectrometer that simultaneously performs spectroscopic ellipsometry (SE) and reflectance-difference spectroscopy (RDS) measurements. We demonstrate its use by determining the surface temperature of Si to a precision of ±1°C and investigating the initial stages of GaP heteroepitaxy on Si(100). Analysis of the real-time SE data indicates that under our conditions GaP and Si interpenetrate as optically identifiable materials on a thickness scale of 100Å.     

基于Mie散射理论的磷化镓粒子散射特性

基于Mie散射理论,对磷化镓微球粒子从紫外光区到红外光区的光散射特性进行了数值计算与理论分析,得到了散射强度与散射角、粒子尺寸参数、偏振度与散射角以及光学截面与粒子尺寸参数的关系。结果表明,入射波长越长,粒子半径越小,散射越弱;并且在红外波段光散射很弱,在散射角90°方向上能观测到线偏振光,这为磷化镓材料的制备与应用提供了理论参考。     

Evolution of Luminescence from Doped Gallium Phosphide over 40 Years

The results of luminescence studies conducted on the same samples of GaP over a 40-year period are discussed. The results strongly imply that periodic ordering of impurities improved the overall optical and mechanical properties of the material over time. Forty years after preparation, “hot” luminescence spectra in gallium phosphide (GaP) are similar to those for nanocrystals. The aged pure and N-doped crystals exhibit stimulated emission at 300 K. The aged GaP:N:Sm at room temperature generates bright green or yellow and red tunable luminescence. These results correlate with Raman light scattering and microhardness data obtained from the same crystals.     

表面粗化提高红光LED的光提取效率

介绍了通过出光表面粗糙化来减少全反射的方法,实验中使用化学湿法腐蚀的技术获得预计的粗糙形貌,结果给出不同参数下的光强和光辐射功率比较,器件的外量子效率得到了约29%的提高。从理论和测试结果两方面阐述了表面粗糙化对提高红光LED外量子效率的机理。