FREQUENCY-TUNABLE TERAHERTZ-WAVE GENERATION FROM GaP USING Cr:FORSTERITE LASERS

We have constructed THz spectrometers using the widely frequency-tunable THz-wave generated from GaP crystal pumped at 1.2 μm region using two Cr:forsterite lasers and compared with that pumped at 1 μm region using a YAG laser and an optical parametric oscillator (OPO). The systems have sufficient resolution for observation of solids and liquids at room temperature. We have measured terahertz absorption spectra of all twenty kinds of amino acids which form proteins.     

Injection-enhanced transformation of luminescence spectra of green GaP:N light-emitting diodes

Complex kinetics of the injection-enhanced change of the GaP:N LED emitting power and transformation of luminescence and DLTS spectra were investigated. It is shown that injection-enhanced processes in GaP:N LED’s includes: a) the interstitial defects (Zn_i) diffusion from the highly doped layer near the contact into the active layer; b) the relief of stresses due to the arising of a dislocation network and the generation of point defects (vacancies antisites); c) diffusion of the impurity atoms via the vacancies which leads to dissociation of the nitrogen atom complexes (NN _i ).     

Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities

Saturation of extrinsic photoconductivity in GaP:N(Zn, Te) diodes could be achieved by excitation with a TEA-CO₂-laser. At wavelengths in the 10 m range intensities of several 100 kW/cm² being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode.     

Excitation transfer between extended band states and N-related localized states in with x up to 1%

We present time-resolved photoluminescence (PL) results of a series of GaP_1-xN_x samples with x up to 0.01. The temperature dependence, the concentration dependence as well as the temporal behavior indicate that the PL is dominated by excitation transfer processes between the extended band states and localized N-related states (such as the isolated N-impurity, various N-pair states and higher N-clusters) as well as by excitation transfer between the various localized N-related states themselves. The excitation transfer processes in conjunction with the concentration-dependent statistics of the various N-related states alone are sufficient to explain the observed red-shift of the luminescence of GaP_1-xN_x with increasing x as well as the spectral dependence of the PL decay times. However, this implies that the PL data alone do not give any conclusive evidence that a hard transformation from an indirect to a direct-gap semiconductor takes place in Ga(N,P) with increasing N up to 2% as often stated.     

Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer

The optical properties of indirect semiconductor quantum wells (QWs), were studied in relation to their electronic states controlled by an ultrathin AlP layer. The insertion of 1 ML of AlP at the center of a 60 Å GaAsP/GaP QW drastically increased the photoluminescence (PL) intensity and the efficiency of the no-phonon (NP) transition. The NP intensity relative to its TO phonon replica was found to greatly depend on the structural parameters and decreased by decreasing the width of the AlP layer or by increasing the arsenic composition of the GaAsP QW. The comparison with numerical calculation clarified that the efficiency of the NP transition is improved when the X_z electrons rather than X_xy electrons are involved in the radiative recombination. This can be qualitatively understood that the X_z electrons are more strongly localized to the AlP layer, leading to the efficient relaxation of the selection rule. The Arrhenius behavior of the PL intensity was also studied and the quenching of the PL intensity was interpreted as being due to the thermally activated escape of carriers from the well region into the GaP barrier.     

第一性原理研究GaP的电子结构、光学性质及各向异性

利用基于密度泛函理论(DFT),采用赝势平面波方法和广义梯度近似法(GGA)研究了闪锌矿ZB结构和盐岩RS结构GaP的基态电子结构、光学性质,根据能带理论初步研究GaP基态能带结构、总态密度(DOS)和分波态密度(PDOS),并计算出吸收系数,反射率,复介电函数,复折射率及能量损失函数.还计算了闪锌矿结构的GaP的各向异性.     

A kinetic study of structured surface relief patterning of GaP (\bar 1\bar 1\bar 1)

Orientation dependent etching of photolithographically patterned GaP was investigated using solutions of HCl:CH₃COOH:H₂O₂. The pattern was prepared using standard ultraviolet lithography and was a two-dimensional grid with an 18 μm repeat, consisting of 15 μm squares separated by 3 μm spaces. The mask sides were aligned along the and directions. Under appropriate etching conditions, high quality arrays of pyramids were prepared. These pyramids were defined by , and facets. It was shown that the etching process depended on the degree of solution aging after initial mixing. For a freshly prepared solution, the etching rate showed an inverse dependence on time. For short etching times (below 5 min), an intermediate etching profile was followed, while for long times (greater than 5 min) etching was kinetically controlled. We demonstrated that controlled etching at extremely low rates (0.1–0.5 μm/min) is feasible with this new approach.     

苯热条件下GaP纳米晶的稳定性

用高温高压苯热合成方法制备了GaP纳米晶,用X射线衍射、光吸收谱及透射电子显微镜对所得样品进行了分析测试．结果表明,GaP纳米晶在苯热条件下是亚稳定态的,反应时间过长及反应温度过高均不利于它的生成和生长．文中还讨论了晶粒度分布与合成条件间的关系,并进行了理论上的定性分析．     

Modulation spectroscopy studies of defects

We examine some relationships between defect characteristics and the modulated optical properties of solids. In particular, the effects of an electric field ℰ on the N absorption in GaP are presented. The crystallographic-orientation dependence is used to determine symmetry properties of the impurity electron states and their interaction with the host band structure. These data also yield an impurity concentration which is in agreement (to within a factor of 2) with results obtained using other techniques. The Franz-Keldysh mechanism responsible for the electro-absorption suggests that in indirect gap semiconductors, an electric field should double the luminescence. This enhancement will be greatest for ℰ along the orbital axis of the luminescent center. Generalizations of this work to other chemical and structural defects are discussed.     

Two-electron photo-ionization from deep states in semiconductors

Photo-ionization (P-I) from deep states in semiconductors can be used to explore the band structure of the crystal as well as to give detailed information about the symmetry and other properties of the bound states themselves. When 2 electrons are bound to a defect the P-I spectrum at high photon energy reflects the initial and final state properties of both electrons. Only at low energies, where one electron is transferred into its 1-electron ground state does the P-I process of a 2-electron state resemble that of a 1-electron state. This fact offers a resolution of the two different interpretations of P-I from the 0^- state in GaP as reported by Henry et al. from photo-capacitance studies and by Grimmeiss et al. from photo-conductivity. In the latter the 4 lowest enercry thresholds (E_i = 0.65 to 1.19 eV) correspond to “1-electron” P-I with the 0 center left in its neutral ground state. Only above about 1.4 eV do the “2-electron” processes appear. In photo-capacitance the “2-electron” processes dominate (the “1-electron” thresholds being too weak or too diffuse to be identified), and the spectrum is strongly modified by relaxation of the lattice around the 0⁺ ion.