合成GaP纳米晶过程的关键影响因素

本文系统研究了在有机溶剂中常压合成GaP纳米晶过程中反应温度、反应时间、反应体系的均匀性和原料的比例等关键影响因素.GaP纳米晶的产率、形貌以及平均粒度随着这些关键因素的改变有很大的不同.制备的GaP纳米晶用X射线衍射仪和透射电镜进行了表征.发现了最优化的合成工艺条件,实现了GaP纳米晶的高产率(达85;)制备,而且形貌和粒度可以根据需要进行调控.     

sp3sTight-binding parameters for transport simulations in compound semiconductors

A genetic algorithm approach is used to fit orbital interaction energies of sp3s* tight-binding models for the nine binary compound semiconductors consistent of Ga, Al, In and As, P, Sb at room temperature. The new parameters are optimized to reproduce the bandstructure relevant to carrier transport in the lowest conduction band and the highest three valence bands. The accuracy of the other bands is sacrificed for the better reproduction of the effective masses in the bands of interest. Relevant band edges are reproduced to within a few meV and the effective masses deviate from the experimental values typically by less than 10%.     

一种Ga-P复合发光材料的制备和性质研究

以Na3P和GaCl3为原料,在常压条件下的有机溶剂中合成出一种荧光材料.XRD分析表明其结构与GaP纳米晶体完全不同.能谱分析证明该产物包含Ga、P、Cl元素,该组成式为GaPCl4.将该产物与桑色素复合,并与GaP/桑色素复合材料相比,发现前者在丙酮、乙醇和水溶液中的发光强度以及发光稳定性均明显优于后者.该实验产物与桑色素复合制成的复合材料在丙酮、酒精和水溶液中出现很强的光致发光,而且可以稳定存在三个月以上.     

红外区磷化稼散射强度的计算与分析

根据Mie散射理论,对磷化稼粒子光散射特性进行了数值计算与理论分析,得到了散射强度与散射角、入射波长以及偏振度与散射角的关系。研究表明,红外波段光散射很小,前向散射占有优势,粒子半径越大,前向散射越强,并且在散射角900方向上能观测到线偏振光,对研究GaP红外光学特性提供了理论参考。     

纳米GaP粉体对结晶紫的光催化降解及其振动光谱分析

对纳米 Ga P粉体 -结晶紫水溶液光催化降解进行了研究。纳米 Ga P粉体在紫外光照射条件下对结晶紫具有光催化降解作用 ;随平均颗粒度的降低 ,纳米 Ga P粉体的光催化活性增加。红外光谱测试结果表明 :进行光催化过程以后 ,纳米 Ga P表面存在的几种主要振动模式变化较小或不变 ;拉曼光谱测试结果表明 :纳米 Ga P粉体的横向光学声子模与纵向光学声子模 ,以及表面主要振动模式几乎没有发生变化     

First principles study on structural,electronic and optical properties of Ga1−xBxP ternary alloys (x = 0, 0.25, 0.5, 0.75 and 1)

The structural, electronic and optical properties of GaP, BP binary compounds and their ternary alloys Ga_1?xB_xP ($x=0.25$, 0.5 and 0.75) have been studied by full-potential linearized augmented plane wave (FP-LAPW) method within the framework of density functional theory (DFT) as implemented in WIEN2k package. Local density approximation (LDA) and generalized gradient approximation (GGA) as proposed by Perdew–Burke–Ernzerhof (PBE), Wu–Cohen (WC) and PBE for solid (PBESol) were used for treatment of exchange-correlation effect in calculations. Additionally, the Tran–Blaha modified Becke–Johnson (mBJ) potential was also employed for electronic and optical calculations due to that it gives very accurate band gap of solids. As B concentration increases, the lattice constant reduces and the energy band gap firstly decreases for small composition x and then it shows increasing trend until pure BP. Our results show that the indirect–direct band gap transition can be reached from $x=0.33$. The linear optical properties, such as reflectivity, absorption coefficient, refractive index and optical conductivity of binary compounds and ternary alloys were derived from their calculated complex dielectric function in wide energy range up to 30 eV, and the alloying effect on these properties was also analyzed in detail.     

GaP波导型发射器产生频率可调谐太赫兹脉冲

报道了利用脉宽可调的光子晶体光纤飞秒激光放大器抽运矩形波导结构的GaP晶体太赫兹(THz) 发射器产生频率可调谐的超快THz脉冲.非线性晶体中光整流过程产生的THz辐射频率随抽运光脉冲宽度而 变化. GaP波导THz发射器可通过波导的几何尺寸来控制色散,以达到增加有效作用长度和提高输出功率的目的. 不同横截面尺寸的波导型发射器的THz辐射峰值频率随相位匹配条件的改变而改变,加以脉宽调节技术, 可以在大频谱范围获得频谱精细可调的THz脉冲.实验中在1 mm×0.7 mm的波导型THz发射器中获得了 频率可调谐的THz脉冲.提出实现THz辐射频率大范围调谐的GaP波导型阵列发射器的实施方案.     

p~ -n~--n结的势垒分布

GaP∶N绿色LED发光效率的提高有赖于对其结构参数的优化。 根据载流子分布的连续性, 由泊松方程自洽求解, 得出了半导体n~-－n结势垒分布的计算方法。 在此基础上,计入n~-区内的电位降, 计算了商用发光二极管p~ －n~-－n结构的势垒分布, 为整体结构的参数优化准备了必要的条件。     

Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers: Effects of pre-annealing of substrates

The effects of substrate pre-annealing on deep level density in Mg-doped GaP liquid-phase epitaxy (LPE) layers were investigated by photocapacitance measurement. With annealing under optimum phosphorus-vapor pressure, concentration of deep donor at E_C — 1.9–2.1 eV increased in undoped GaP substrate. Deep level densities in Mg-doped layers were also affected by pre-annealing of the substrates. Densities of dominant deep levels at E_V + 0.85 eV and E_V + 1.5 eV were an order of magnitude reduced and, in contrast, the level at E_C − 2.1 eV in Mg-doped layer increased with long pre-annealing. This level at E_C − 2.1 eV is supposed to be involved with P-rich-type nonstoichiometric defects, such as phosphorus interstitial atoms diffused from the surface of the substrate.     

老化产生的深能级对GaP纯绿发光二极管发光效率的影响

测量了GaP纯绿发光二极管老化前后的可见和近红外发光光谱,研究了老化产生的深能级的来源及其对二极管发光效率的影响.在老化后的发光光谱中观测到650nm和1260nm发光带,发现1260nm发光带的发光强度随老化时间的增加而增强.实验结果表明老化产生的与磷相关的深能级严重地影响了GaP纯绿LED的发光效率.