In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

MOVPE-preparation of highly ordered InP(100) and GaP(100) surfaces was monitored with in-situ reflectance difference spectroscopy (RDS). Specific ordered P-terminated and ordered cation-terminated surface reconstructions were identified with specific structured RD spectra with the highest peaks. After contamination-free transfer of the samples to UHV, RDS measurements were performed also at 20 K. The experimental RD spectrum for the In-terminated, (2×4) reconstructed InP(100) surface shows a remarkable similarity to a recently published theoretical spectrum, whereas there is only moderate similarity between the experimental RD spectrum for the (2×4) reconstructed Ga-terminated GaP(100) surface and a recently proposed theoretical spectrum.     

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

AIGaP and GaP films were deposited on the (100) Si substrates by atomic layer epitaxy (ALE) in the temperature range between 450 and 600°C. Under optimum growth conditions, the growth of GaP and AIGaP was observed to proceed in a two-dimensional (2-D) fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AIGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed as 2-D growth. This avoids island growth and the two-step growth process currently used.     

Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si

We present a study of the real-time monitoring of the homoepitaxial growth of GaP, InP, and the growth of InP/GaP and GaP/Si(001) heterostructures, combining single wavelength p-polarized reflectance (PRS), reflectance-difference spectroscopy (RDS), and laser light scattering (LLS) during pulsed chemical beam epitaxy with tertiarybutylphosphine, triethylgallium, and trimethylindium sources. The growth rate and the bulk optical properties are revealed by PRS with submonolayer resolution over 1000A of film growth. The surface topography is monitored by LLS providing additional information on the evolution of the surface roughness as well as the nucleation/growth mechanism. The optical surface anisotropy, which is related to surface reconstruction and/or surface morphology, is monitored by RDS and compared with the results of PRS and LLS. The results are discussed with respect to the deposition kinetics, in particular as a function of the V:III flux ratio. The pulsed supply of chemical precursors causes a periodic alteration of the surface composition, which is observed as correlated periodic changes in the RD and PR signals, confirming the high sensitivity of both methods to surface chemistry.     

Controlled vapor-pressure heat-treatment effect on deep levels in liquid-encapsulated czochralski-grown GaP crystals

Photocapacitance (PHCAP) measurements have been carried out on GaP crystals grown by the liquid-encapsulated Czochralski (LEC) method with heat treatment under various phosphorus-vapor pressures at different temperatures. Electron traps of E_C−1.1 eV, E_C−1.6 eV, E_C−1.9 eV, and a hole trap of E_V+2.26 eV are mainly detected. The phosphorus-vapor pressure dependence of the E_C−1.9 eV trap density and their diffusion behavior indicate that they are interstitial phosphorus atoms. The densities of both E_C−1.1 eV and E_C−1.6 eV traps are strongly dependent on the shallow impurity concentrations. Moreover, the density of E_C−1.1 eV traps increases with increasing phosphorus-vapor pressure. From these results, we suggest that E_C−1.1 eV traps are the complexes of shallow donors and antisite phosphorus atoms. Deep-level densities in GaP crystals after annealing at 860°C or 960°C for 60 min are decreased almost one order of magnitude lower than those in untreated substrate crystals, which should have occurred via out-diffusion of interstitial phosphorus atoms. However, such an effect is not prominent for 800°C treatment for 60 min.     

Analysis of room-temperature luminescence spectra of VPE-grown nitrogen-doped gallium phosphide

The effect of nitrogen doping on the 300°K quantum efficiency and luminescence spectra of VPE-grown gallium phosphide has been investigated. The range of nitrogen concentrations studied was 2 × 10¹⁸ –1.5 × 10¹⁹ cm{⁻³ on the corrected Lightowlers scale. Over this range, the external quantum efficiency of contactless dice at 40 amp/cm² in air varied from 0.04% to 0.13%, increasing monotonically with increasing nitrogen concentration. The photoluminescence spectra from as-grown epi layers and the electroluminescence spectra of contacted dice in reflecting cups were compared, and were characterized by the parameters lumens/watt, radiometric center of gravity, and photometric center of gravity. The relationship of these parameters to each other and their variation with nitrogen concentration in GaP has been determined. The problem of filtering the spectra to obtain greener devices with acceptable brightness has been investi-gated using the transmission spectra of two specific filters.     

Degradation of GaP:N LEDs

The degradation of light output with operating time has been studied for nitrogen doped GaP light emitting diodes fabricated from vapor phase epitaxial material. The degradation is found to saturate at a non-zero value of efficiency. The process is characterized in terms of a degradation rate constant and the saturation value of efficiency. The rate is found to be a strong function of current density during operation and to a lesser degree materials parameters such as dislocation density. The saturation value appears to be independent of these parameters. The degradation is specifically associated with a decrease in the minority carrier lifetime in the p-side of these diffused LEDs. A model for the generation of non-radiative recombination centers which describes the degradation process quantitatively is presented.     

High-resolution GaP Terahertz Spectrometer and Its Application to Detect Defects in Gamma-irradiated Glucose Crystal

We developed high-resolution GaP THz signal generator using Cr:Forsterite lasers with gratings as both a pump and a signal beam for difference-frequency generation. A line width of less than 500 MHz and a wide tunable frequency range (0.6–6.2 THz) provide sufficient resolution for measuring materials with sharp absorption bands using the generator as the light source for a THz spectrometer. This is suitable for materials such as gases or solid samples at low temperatures. We demonstrated the detection of defects in organic materials, as they appear as slight deviations in the absorption frequency in the THz region.     

Synthesis and characterization of GaP nanochains with a twin-modulated quasi-periodic structure

GaP nanochains have been synthesized by hydrogen-assisted thermal evaporation, and characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and Raman spectroscopy. GaP nanochains possess a (111) twin crystal plane-modulated quasi-periodic structure, that gives a strong green photoluminescence at 618 nm. While the Raman spectrum of the nanochains is similar to that of the GaP crystal, the intensity of the longitudinal optical (LO) peak is stronger than that of the transverse optical (TO) peak, which is supposedly related to the nanochain microstructures.     

合成GaP纳米晶过程的关键影响因素

本文系统研究了在有机溶剂中常压合成GaP纳米晶过程中反应温度、反应时间、反应体系的均匀性和原料的比例等关键影响因素.GaP纳米晶的产率、形貌以及平均粒度随着这些关键因素的改变有很大的不同.制备的GaP纳米晶用X射线衍射仪和透射电镜进行了表征.发现了最优化的合成工艺条件,实现了GaP纳米晶的高产率(达85;)制备,而且形貌和粒度可以根据需要进行调控.