静电感应器件栅源击穿特性的改善

对静电感应器件的栅源击穿特性做了实验研究,结果表明,当使用高阻单晶材料作为芯片的衬底和沟道,沟道的半宽度小于零栅压耗尽层宽度且源区外延层掺杂深度较高时,器件的击民ｇｓ０基本上局限在１０Ｖ以下,与外延层的厚度没有明显关系,作者指出静电感应器件栅 源击穿的特点是由于沟道宽度较窄和源区道区掺杂浓度差异较大两方面的因素共同的。在这种情况下,栅源击穿电压ＢＶｇｚ０与半导体的击穿电场Ｅｂ和沟道宽度Ｗ的关系可表     

Dielectric-Lined Multiwave Cerenkov Generators Producing High Power Millimeter Waves

This paper presents the concept of a Dielectric-lined Multiwave Cerenkov Generator(DMWCG) producing high power millimeter waves, which is investigated with a two and one half dimensional( ) electromagnetic relativistic Particle-in-Cell(PIC) simulation code. It is showed that the DMWCG can operate in a lower diode-voltage regime with much higher radiation efficiency as compared with the usual Multiwave Cerenkov Generator(MWCG). The simulation work indicates both the downshift of the wave frequency in the presence of the dielectric liner and the existence of the optima for the permittivity of the liner as well as for the magnitude of the guiding magnetic field. The required intensity of the guiding field is reduced with the introducing of the liner. The radiation is generated at the dominant frequency of 31.5GHz. The power level of 1.5GW is achieved, with radiation efficiency up to 15%. The features of parameter dependency are presented. And reasonable explanation is put forward. In addition, the enhanced propagation of the electron beam is studied in the presence of the dielectric liner.     

Influence of different factors on the output power transferred into medium by ultrasound

The influence of several factors (amplitude of ultrasonic waves, external static pressure, temperature and viscosity of medium) acting, either individually or in combination, on the amount of power transferred to a liquid medium during ultrasonication (power output) was measured by calorimetry. At constant amplitude (150 microns) and pressure (200 kPa), the power output decreased as the temperature was raised. The effect of temperature could be compensated by increasing pressure. The magnitude of the increase in power output due to raising the pressure depended on the pressure range and the treatment temperature. At all temperatures and pressures studied, the power output increased exponentially when the amplitude was increased linearly. The magnitude of this power output did not depend on the temperature or pressure of treatment. At 40 degrees C the magnitude of the increase in power output due to increasing the pressure was not influenced by the amplitude of sonic waves. The power output increased as the viscosity of the medium was increased. The magnitude of this effect did not depend on the amplitude but on the static pressure.     

A low-phase-noise 900-MHz CMOS ring oscillator with quadrature output

A 900-MHz two-stage CMOS voltage controlled ring oscillator (VCRO) with quadrature output is presented. The circuit is designed in a 0.18-um CMOS technology and operated on a 1.8-V supply voltage. The VCRO have a tuning range of 730 MHz to 1.43 GHz and good tuning linearity. Between 0 V and 1.1 V of control voltage, the gain of VCRO is around −620 MHz/V. At 900 MHz, the phase noise of the VCRO is −106.1 dBc/Hz at 600-KHz frequency offset with power consumption of 65.5 mW.     

CPU电源电路用沟槽棚MOSFET与e-JFET开关管的功耗对比研究

本文主要针对低压功率开关管的功耗进行了理论分析，并在此基础上分别对两种典型结构槽栅MOSFET和e-JFET在不同工作频率 下的功耗分布和总功耗进行了定量的仿真计算和对比。通过研究发现，在一定工作条件下，常闭型e-JFET比目前常用的沟槽栅型MOSFET仅开关功耗就降低约24%，总功耗则降低约30%，将其运用于CPU电源电路中的开关功率管的制造，在高频领域有着极好的应用前景。     

Power bipolar devices

This paper deals with the specific aspects of bipolar device physics and with the problems posed by the design of their structure. Emphasis will be placed on the fundamental mechanisms which determine the on-state, the off-state and the switching performance. A number of relationships between operating characteristics and structure parameters are established. These relationships are useful for improving structure designs. The current-handling capability of high-voltage transistors is discussed thoroughly as a relevant example. Finally, the state of the art and trends of power bipolar devices are briefly reviewed.     

低杂波电流驱动的密度极限分析

用低杂波的可的性条件，参量不稳定条件和功率耦合谱分析了低杂波电流驱动。由于波的可近性条件限制耦合谱中平行相速度较大的波进入等离子体中心，参量不稳定性使平行相速度较低的波与离子相互作用，随着等离子体密度的增中，这些作用越来越明显，最终导致低杂波不能在中心与电子相互作用，驱动电流消失，这就是所谓密度极限。在本文建立的模型基础上的计算结果与实验结果符合较好。     

一种新型的双极功率器件—BST

针对常规双极功率晶体管（ＢＰＴ）中存在的高频、高电流增益和高ＣＥ击穿电压间的固有矛盾，基于一新工艺提出了一种新型的双极功率器件──ＢＳＴ（ＢａｓｅＳｈｉｅｌｄｉｎｇＴｒａｎｓｉｓｔｏｒ）结构。分析了ＢＳＴ夹断后的两维电场解析解，可知深Ｐ＋多晶硅基区的引入对有源Ｐ基区产生明显的电场屏蔽效应，该基区屏蔽效应随Ｐ＋基区深入Ｎ－区中的深度Ｌ的增加以及相邻Ｐ＋基区间距２Ｄ的减小而增强。正是这种基区屏蔽效应，使得ＢＳＴ的特征频率ｆＴ、电流增益ｈｆｅ和ＣＥ击穿电压ＢＶｃｅ０都较常规ＢＰＴ大为提高，较好地解决了常规ＢＰＴ中存在的主要矛盾。实验验证了理论分析的结果。     

长途电信枢纽楼电源自动监控系统

介绍了天津长途电信枢纽电源自动监控系统的结构、特点、功能、效果及开发实验过程中的一些体会。对正在设计和实施类似监控系统的单位及工程技术人员会有一定的启迪和帮助。     

Single-phase AC losses in prototype HTS conductors for superconducting power transmission lines

We report single-phase AC loss measurements on 8-, 4-, and 3-layer, multi-strand, HTS prototype conductors for power transmission lines. We use both calorimetric and electrical techniques. The agreement between the two techniques suggests that the interlayer current distribution in 1-m long conductors are representative of those in long conductors. The losses for the 8- and 4-layer conductors are in rough agreement, with the 8-layer losses being somewhat lower. The 3-layer conductor losses are substantially higher — probably due to unbalanced azimuthal currents for this configuration.