双原子正方晶格光子晶体边界模式的光传输特性

利用平面波展开法,发现双原子正方晶格光子晶体中ΓM方向边界面存在着快慢两类边界模式,并且通过计算色散关系和电场分布研究了边界参量对这两类边界模式传输特性的影响.依据两种模式的色散关系,计算了群指数和群速度色散参量,结果表明边界参量的变化对第一类边界模式传输特性的影响较小,该模式的平均群指数始终维持在5.0左右;第二类边界模式与第一类模式明显不同,边界参量的变化能够有效地影响到这种模式的传输特性,该模式的最大平均群指数可达178左右.利用时域有限差分法记录了不同时刻电场强度在边界附近的分布及监测点处的电场幅度变化情况,结果表明,两类模式都能够被限制在边界附近并向前传播,时域有限差分法得到的群速度与平面波展开法的结果完全吻合.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Cooling-down of thermal thick probes after flash excitation – A measure for the real energy density?

Though flash lamps are one of the most applied heat sources in the field of Thermographic Testing (TT) using active thermography, only little is known about the actually achieved energy input into test objects. In this paper, an easy to realize sensor concept is proposed and experimentally evaluated. The concept is based on the measurement of the surface temperature of a thermal thick probe after flash excitation. After considering the sensor concept with FEM simulations the experimental investigation of four materials (two polymer and two building materials) is described. It will be shown that a suited coating is essential for the realization of the sensor concept. The experimental results prove the suitability of black rigid PVC as the most promising material. Using a coated PVC sample the energy density of short laser pulses, similar to flashes of flash lamps, could be determined exactly with an estimated relative uncertainty of only a few percent.     

塞曼效应仿真实验平台

塞曼效应实验是学生了解原子具有磁矩和空间取向量子化现象的重要实验,至今塞曼效应仍是研究能级结构的重要方法之一.为了能够让学生更加清楚地了解塞曼效应实验的基本原理和操作规程,针对教学中的重点和难点,运用flash软件制作出塞曼效应仿真实验.该程序可全程高度仿真实验过程,具有界面友好、易于操作、无需安装等优点.为实验教学提供了一种新的辅助方式.     

Flash memory effects based on styrene/maleimiade copolymers with pendant azobenzene chromophores

Two styrene/maleimiade copolymers with pendant azobenzene chromophores, poly(styrene-1-(4-phenylazo-phenyl)-pyrrole-2,5-dione) (PS-DP) and poly((4-vinyl-benzyl)-9H-carbazole-1-(4-phenylazo-phenyl)-pyrrole-2,5-dione) (PVCz-DP), were synthesized. The polymeric memory devices based on each of the two polymer films (ITO/Polymer/Al) show similar rewritable flash memory behaviors but different transition voltages. By introduction of carbazole groups in the polymer side chains, the voltage difference from OFF to ON state of ITO/PVCz-DP/Al is reduced obviously in comparison with that of ITO/PS-DP/Al, which is beneficial to the protection of devices. Both ITO/PS-DP/Al and ITO/PVCz-DP/Al show high stability under a constant stress or continuous read pulses voltage of 1.0 V. The memory mechanism is governed by space-charge limited conduction (SCLC) on the basis of the I–V curves of these fabricated memory devices. With excellent flash memory characteristics and simple processability, the memory devices fabricated with these two styrene/maleimiade copolymers have potential applications for the future electronic memory devices.     

Data Randomization Scheme for Endurance Enhancement and Interference Mitigation of Multilevel Flash Memory Devices

In this letter, we propose a data randomization scheme for endurance and interference mitigation of deeply‐scaled multilevel flash memory. We address the relationships between data patterns and the raw bit error rate. An on‐chip pseudorandom generator composed of an address‐based seed location decoder is developed and evaluated with respect to uniformity. Experiments performed with 2x‐nm and 4x‐nm NAND flash memory devices illustrate the effectiveness of our scheme. The results show that the error rate is reduced up to 86% compared to that of a conventional cycling scheme. Accordingly, the endurance phenomenon can be mitigated through analysis of interference that causes tech shrinkage.     

一种新颖的模糊形态联想记忆网络

模糊形态联想记忆网络FMAM具有较强的抗膨胀或腐蚀噪声能力，且可以模糊性解释。但抗混合噪声的能力很弱。而在实际中，随机噪声往往是混合型的，既有膨胀又有腐蚀噪声。为此提出了一种基于尺度空间的模糊形态联想记忆网络，并分析了其抗膨胀／腐蚀噪声和抗随机噪声的能力，它提高了自联想FMAM的抗随机噪声能力。通过仿真实验验证了该方法具有良好的性能。     

A new method to extract gate coupling ratio and oxide trapped charge in flash memory cell

A new method to obtain the gate coupling ratio (α_g) and oxide trapped charge (Q_ox) as a result of cycling in flash memory cells is described here. Three cells with an equivalent physical structure but different erase characteristics are measured. The threshold changes versus erase times are fitted to the charge removal rate calculated based on Fowler-Nordheim (FN) tunneling and the capacitive relations among all nodes. The extracted α_g is independent of technologies and this method is particular useful when the profile of the floating gate is not traditionally rectangular owing to advanced processes such as trapezoidal poly etch or a poly-spacer addition on the floating gate sidewall. The Q_ox can also be determined once α_g is extracted.     

大容量NAND Flash K9T1G08UOM在网络存储中的应用

针对嵌入式系统对存储的需求，提出了基于大容量NAND Flash的存储方案。简要介绍NAND Flash器件K9T1G08UOM及其编程特点，并讨论了网络存储应用的存储策略和数据可靠性方面的考虑，设计并实现了网络数据流的NAND Flash存储。