High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

Low-pressure pyrolysis studies of a new phosphorus precursor: Tertiarybutylbis(dimethylamino)phosphine

The low pressure decomposition of tertiarybutylbis(dimethylamino) phosphine, (t-Bu)P(NMe₂)₂, (TBBDMAP), has been studied on quartz and deposited GaP and InP surfaces. This new phosphorus precursor has been found to pyrolyze on quartz surfaces at much lower temperatures than the related compounds tertiarybutylphosphine, (t-Bu)PH₂, (TBP) and tris(dimethylamino)phosphorus, P(NMe₂)₃, (TDMAP). In contrast to the results obtained for TDMAP, GaP and InP surfaces decrease the decomposition temperature of TBBDMAP only slightly. The TBBDMAP reaction products were dimethylamine, methylmethyleneimine, and isobutylene, consistent with previous pyrolysis studies of TBP and TDMAP.     

Discontinuous Galerkin method with a posterioriL_p(0,t_i) error estimate for second-kind Volterra problems

Summary. We consider a discontinuous Galerkin finite element method applied in time to a model Volterra equation of the second kind. A residual-based computable Galerkin-error estimate is derived for . This estimate does not explicitly contain the time step and therefore the time step control must be based on a heuristic criterion, the estimate can then be used to demonstrate the integrity, or otherwise, of the finite element solution. After performing some numerical experiments we conclude that this approach is at least competetive with classical discretizations since it is computationally simple to implement, but has the added advantage of reliable error feedback. Received June 25, 1995     

Application of enzyme-field effect transistor sensor arrays as detectors in a flow-injection analysis system for simultaneous monitoring of medium components. Part II. Monitoring of cultivation processes

Glucose, maltose, sucrose, lactose, ethanol and urea concentrations were monitored simultaneously during the cultivation of Escherichia coli and Saccharomyces cerevisiae by means of enzyme field effect transistors (EnFETs) applying glucose dehydrogenase (GDH), maltase (MAL)/GDH, invertase (INV)/GDH, β-galactosidase (β-GAL)/galactosedehydrogenase (GALDH), alcoholdehydrogenase (ADH)/aldehydedehydrogenase (ALDH), and urease. These enzymes were (co)immobilized on the pH sensitive gates of an eight-FET array. The FET array was integrated in a commercial FIA system.     

IR LASER BACKSCATTERING FROM AN ARBITRARILY SHAPED DIELECTRIC OBJECT WITH ROUGH SURFACE

The backscattering of light wave from arbitrarily convex dielectric objects withrough surface is investigated and formulas for calculating the backscattering cross-section of bothcoherent and incoherent fields are obtained.In the infrared wave-band,the influence of the ge-ometry,permittivity and statistical characteristics of the rough surface on LRCS is analyzed,byusing rough sphere and ellipsoids as examples.     

On the free boundary of surfaces with bounded mean curvature: the non-perpendicular case

H?lder continuity up to the free boundary is proved for minimizing solutions if they meet the supporting surface in an angle which is bounded away from zero. The problem is localized by proving the continuity of the distance function, a result which is also true for stationary points. Received: 14 April 1998     

Third order nonoscillatory central scheme for hyperbolic conservation laws

Summary. A third-order accurate Godunov-type scheme for the approximate solution of hyperbolic systems of conservation laws is presented. Its two main ingredients include: 1. A non-oscillatory piecewise-quadratic reconstruction of pointvalues from their given cell averages; and 2. A central differencing based on staggered evolution of the reconstructed cell averages. This results in a third-order central scheme, an extension along the lines of the second-order central scheme of Nessyahu and Tadmor \cite{NT}. The scalar scheme is non-oscillatory (and hence – convergent), in the sense that it does not increase the number of initial extrema (– as does the exact entropy solution operator). Extension to systems is carried out by componentwise application of the scalar framework. In particular, we have the advantage that, unlike upwind schemes, no (approximate) Riemann solvers, field-by-field characteristic decompositions, etc., are required. Numerical experiments confirm the high-resolution content of the proposed scheme. Thus, a considerable amount of simplicity and robustness is gained while retaining the expected third-order resolution. Received April 10, 1996 / Revised version received January 20, 1997     

布尔矩阵维数的缺断区间(英)

本文证明了n维布尔矩阵维数的一个新的缺断区间为这一结果扩充了一些已知的结论．