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41.
A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range. 相似文献
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数码相机CMOS图像传感器的特性参数与选择 总被引:2,自引:0,他引:2
介绍了数码相机的核心器件———CMOS图像传感器的特性参数和在数码相机设计过程中CMOS图像传感器的选择。选择CMOS图像传感器,不仅需要考虑包括传感器的尺寸、像素总数和有效像素数、最小照度、动态范围、灵敏度、分辨力、光电响应不均匀性以及光谱响应等在内的特性参数,而且还要考虑电源管理和功耗、模数转换位数、开发的简便性以及成本等因素。 相似文献
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A solution to the phase problem in optics is considered within the context of the analysis of signals changing in time and of the effect of an object under investigation on the probing radiation. The solution is based on the use of a twin-wave interferometer with phase modulation in one of the channels and a spectrometer. The analysis is concerned, in particular, with signals and processes of ultrashort duration. To shift the frequency in the interferometer channel, an electrooptical crystal of ferroelectric perovskite is used as the modulator. Errors of amplitude and phase structures determined are analyzed. 相似文献
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由于可见光成像系统的聚焦范围有限,因而在成像过程中,除聚焦良好的物体能生成清晰的图像外,该物体前后一定距离外的所有物体都将呈现不同程度的模糊.为了获得场景内所有物体均清晰的图像,在分析了多聚焦图像成像机理的基础上,提出了一种基于小波包变换的融合方法.它是将成像系统先聚焦在一部分对象上,得到其清晰的图像;然后再将其聚焦在另一部分对象上,得到另一清晰的图像;最后把这两幅实验图像加以融合,从而获得场景内所有物体均清晰的图像.实验结果表明,基于小波包变换的融合方法能够将信号的频带进行多层次划分,对高频成分也能进一步地分解,可有效综合多聚焦图像. 相似文献
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Vincent Maurice 《Surface science》2005,581(1):88-104
STM, STS, LEED and XPS data for crystalline θ-Al2O3 and non-crystalline Al2O3 ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10−7-1 × 10−5 mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al3+ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlOxOHy with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H2O) = 1 × 10−7 mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified. 相似文献