用反差确定电子束曝光剂量与刻蚀深度的关系

 为了精确地确定电子束曝光剂量与刻蚀深度间的关系,根据抗蚀剂的灵敏度曲线,采用反差经验公式来确定剂量与刻蚀深度间的关系。选用正性抗蚀剂PMMA进行曝光实验,将计算值进行曲线拟合,得到的关系曲线与实验结果基本相符。当剂量在20~35 μC/cm²间时,实验值与计算值间的差值最小,说明当剂量在此范围内时该方法能够更加精确地确定剂量与刻蚀深度间的关系。采用该方法节省了实验时间,提高了刻蚀效率。     

Alpha particle absorption and inclined incidence track parameters evaluation in plastic detectors

In this work the use of our recently constructed irradiation chamber was involved in the current experiments. The absorption of alpha particle in air has been studied through a set of experiments in which the stopping power has been measured. A comparison between the calculated values and the present experimental results is given and a good agreement has been found. Critical angle (θ_c) determination has been carried out using two different techniques, via indirect and direct measurements, under different etching conditions and at various alpha energies. An empirical fit of θ_c−h (h is the removal thickness layer) dependence has been calculated and found to work well in the studied h ranges. Also, the inclined alpha tracks parameters of energies between 1.0 and 5.0 MeV have been studied. Results can be successfully applicable in alpha autoradiography studies and detector efficiency determination for track registration in plastic recorders.     

干法腐蚀损伤研究

采用 RIE 法,利用 PIN 光电二极管,研究了干法腐蚀损伤机理及引起损伤的主要因素。由于离子轰击及电子、紫外线辐射,形成了腐蚀面的损伤和沾污。射频功率的大小对表面损伤起着主要作用。用退火方法可以降低损伤程度,甚至可以消除小功率作用下的损伤。     

Evaluation of desorption activation energy of SiCl2 molecules

The chemical etching of silicon in Cl₂ ambient was considered. The desorption activation energy for an SiCl₂ molecule was evaluated using an experimentally measured dependence of etching rate on concentration of Cl₂ molecules. It was found that the desorption activation energy of SiCl₂ molecules is equal to E_d=(1.605±0.010) eV. This corresponds to a value of the mean lifetime of adsorbed molecules on the surface of τ=46 ms at temperature T=724 K.     

Flash memory中的叠栅腐蚀工艺

本文主要介绍了 Intel 式 Flash memory 单元结构的叠栅自对准腐蚀工艺和有关的叠栅腐蚀原理,分析了 Flash 叠栅自对准腐蚀对 Flash 性能的重要性。     

太阳能电池生产线中新型等离子体刻蚀机刻蚀工艺探讨

介绍了一种新型等离子体刻蚀机的使用条件,通过对各种参数变化的组合实验,得到了最佳工艺数据.利用该刻蚀机生产的电池片刻蚀效果好,刻蚀后经检测,电池片漏电流小,并联电阻大,提高了电池片的综合性能指标.     

Extended defects in CdZnTe crystals: Effects on device performance

We explored some unique defects in a batch of cadmium zinc telluride (CdZnTe) crystals, along with dislocations and Te-rich decorated features, revealed by chemical etching. We extensively investigated these distinctive imperfections in the crystals to identify their origin, dimensions, and distribution in the bulk material. We estimated that these features ranged from 50 to 500 μm in diameter, and their depth was about ∼300 μm. The density of these features ranged between 2×10² and 1×10³ per cm³. We elaborated a model of them and projected their effect on charge collection and spectral response. In addition, we fabricated detectors with these defective crystals and acquired fine details of charge-transport phenomena over the detectors’ volume using a high-spatial resolution (25 μm) X-ray response mapping technique. We related the results to better understand the defects and their influence on the charge-transport properties of the devices. The role of the defects was identified by correlating their signatures with the findings from our theoretical model and our experimental data.     

Coating properties of a novel water stationary phase in capillary supercritical fluid chromatography

The coating properties of a novel water stationary phase used in capillary supercritical fluid chromatography were investigated. The findings confirm that increasing the length or internal diameter of the type 316 stainless‐steel column used provides a linear increase in the volume of stationary phase present. Under normal operating conditions, results indicate that about 4.9 ± 0.5 μL/m of water phase is deposited uniformly inside of a typical 250 μm internal diameter 316 stainless‐steel column, which translates to an area coverage of about 6.3 ± 0.5 nL/mm² regardless of dimension. Efforts to increase the stationary phase volume present showed that etching the stainless‐steel capillary wall using hydrofluoric acid was very effective for this. For instance, after five etching cycles, this volume doubled inside of both the type 304 and the type 316 stainless‐steel columns examined. This in turn doubled analyte retention, while maintaining good peak shape and column efficiency. Overall, 316 stainless‐steel columns were more resistant to etching than 304 stainless‐steel columns. Results indicate that this approach could be useful to employ as a means of controlling the volume of water stationary phase that can be established inside of the stainless‐steel columns used with this supercritical fluid chromatography technique.     

衍射光学元件的反应离子束蚀刻研究

本文提出了一种制作衍射光学元件的新方法——-反应离子束蚀刻法.对此技术研究的结果表明:反应离子束蚀刻法具有高蚀刻速率、蚀刻过程各向异性好、蚀刻参数控制灵活等特点,对于衍射光学元件和微光学元件的精细结构制作十分有利.本文详细总结了反应离子束蚀刻过程中各工艺参数对蚀刻速率的影响,并在红外材料上制作了Dammann分束光栅.     

Diamond surface modification following thermal etching of Si supported hydrogenated diamond films by DBr

In this work, we study the modification of hydrogenated diamond films deposited on silicon resulting from its exposure to DBr followed by an annealing above 600 K, using high resolution electron energy loss spectroscopy (HREELS). This procedure results in silicon carbide SiC formation within the diamond film, as evidenced by the observation of a loss peak at 117 meV and its first harmonic at 233 meV in HREEL spectra. This diamond surface modification is interpreted as resulting from the reaction of products of the silicon support thermally activated etching with hydrogenated diamond.