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排序方式: 共有322条查询结果,搜索用时 46 毫秒
1.
D. Xu T. Enoki T. Suemitsu Y. Umeda H. Yokoyama Y. Ishii 《Journal of Electronic Materials》1998,27(7):L51-L53
We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures,
which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved
performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different
surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively,
the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry
of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to
conduct “recess engineering” for InAlAs/InGaAs MODFETs. 相似文献
2.
P Sallagoity F Gaillard M Rivoire M Paoli M Haond S McClathie 《Microelectronics Reliability》1998,38(2):700
This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated. 相似文献
3.
GaAs器件工艺中等离子刻蚀及计算机辅助监控技术研究 总被引:2,自引:1,他引:1
陈正明 《固体电子学研究与进展》1994,14(2):182-185
用N2气和NF3反应气体,在较低的刻蚀功率下实现了用薄正性光刻胶AZ1518作掩模,均匀、快速刻蚀SiO2,SiON,Si3N4,WN,W等材料的等离子刻蚀技术。利用到蚀过程中射频参数的变化和计算机技术,将射频参数的变化在计算机屏幕上实时显示,实现了计算机辅助监控和终点检测技术。 相似文献
4.
GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究 总被引:2,自引:0,他引:2
许兆鹏 《固体电子学研究与进展》1996,16(1):56-63
为研制全集成光开关、微片式激光器等,对GaAs、GaP、InGaAsP、InAIGaAs、AlGaAs等材料的化学腐蚀进行了实验研究。为了研制InAlGaAs/InAlAs/InAlGaAs微片式激光器,开发了H3PO4/H2O2/H2O薄层腐蚀液和HCl/H2O选择性腐蚀液;为了研制InGaAsP/InP/InGaAsPTbar型光波导,开发了HCl/H3PO4/H2O2薄层腐蚀液和HCl/H2O2选择性腐蚀液;为了研制GaP、InGaP光波导,开发了HCl/HNO3/H2O薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外,蚀刻成的GaP光波导侧壁平滑无波纹起伏。此种结果尚未见报导。 相似文献
5.
We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces. 相似文献
6.
7.
JD树脂刻蚀及涂层的XPS研究 总被引:2,自引:0,他引:2
JD光学树脂表面刻蚀过程的XPS研究表明,引进树脂遥COH,C=O,C-SO3H,COOH等基因随刻蚀温度的提高或时间的延长而增加,对其相对含量进行了计算,固化后的耐磨涂层具有SiO2结构,JD板材的最佳刻蚀条件为20℃,20min。 相似文献
8.
The effect of low-energy ion bombardment on CD4/O2 and CF3X (X=F, Cl, Br) plasma etching has been assessed by applying controlled rf bias voltages on polystyrene (PS) and polymethylmethacrylate (PMMA) samples. In both cases ion bombardment has been found to have a chemical effect. In the case of CF4/O2 discharges, ion bombardment has been found to change the relative etching efficiency of different mixtures. In the case of CF3X plasmas, ion bombardment has been found to alter PMMA and PS etch rates in a different way. In particular, the ratios between CF4 and CF3X (X=Cl, Br) etch rates of PS have been found to decrease with increasing bias voltage. This effect has been tentatively attributed to an ion bombardment-induced enhancement of the reaction between the aromatic ring and halogen molecules formed in CF3Cl and CF3Br discharges. 相似文献
9.
A chemical flux of sulfur hexafluoride (SF6) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF6. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching. 相似文献
10.
《中国化学快报》2020,31(5):1133-1136
Due to the serious harm of diabetes to human health, development of sensitive assays for glucose level is of high significance for early prevention and treatment of diabetes. Currently, most conventional enzyme-based glucose sensors suffer from high cost and low stability due to the inherent defects of natural enzymes. Herein, we develop a pure nanozyme-based glucose detection method using Ag@Au core/shell triangular nanoplates (TNPs), which combines glucose oxidase (GOD)- and horseradish peroxidase (HRP)-like activities of the Au shell and inherent plasmonic properties of Ag TNPs. The sensing mechanism is based on the fact that the Au shell possessed GOD-like activity, enabling the oxidation of glucose to produce H2O2, which can further etch the silver core, leading to the decrease of absorbance at 800 nm and the color change from blue to colorless. Compared with the previous nanozymes-based glucose sensors, our method avoids the use of enzymes and organic chromogenic agent. Moreover, the stability of the Ag@Au core/shell TNPs is much better than that of Ag TNPs due to the protection by the coating of the Au shell. This method was successfully applied to the detection of urine samples from patients with diabetes, indicating its practical applicability for real sample analysis. 相似文献