SiO2改性HZSM-5沸石物性的影响

SiO2改性HZSM-5沸石物性的影响;硅油;化学液相沉积     

Growth of Single-walled Carbon Nanotubes on Substrates Using Carbon Monoxide as Carbon Source

The growth of single-walled carbon nanotubes(SWCNTs) on substrates has attracted great interests because of the potential applications in various fields. Carbon monoxide(CO) was used as the carbon source for the growth of SWCNTs on silicon substrates. Random or oriented SWCNTs can be produced by varying the CO flow rate. When the flow rate of CO was as low as 20 sccm(sccm:standard cubic centimeter per minute), dense SWCNT networks with clean surface were produced. When the flow rate was above 50 sccm, vertically aligned SWCNT(VA-SWCNT) arrays were grown. Well-aligned VA-SWCNT arrays were obtained in the temperature range of 650-800℃ and the content of large-diameter(above 1.7 nm) tubes in the array increased with the temperature. The height of the array was affected by the growth temperature, the CO flow rate, and the growth time. These findings indicate CO can be used as an efficient carbon source for the growth of SWCNTs on substrates under low flow rates.     

Electrochemical Characteristics of Discrete,Uniform, and Monodispersed Hollow Mesoporous Carbon Spheres in Double‐Layered Supercapacitors

Core–shell‐structured mesoporous silica spheres were prepared by using n‐octadecyltrimethoxysilane (C18TMS) as the surfactant. Hollow mesoporous carbon spheres with controllable diameters were fabricated from core–shell‐structured mesoporous silica sphere templates by chemical vapor deposition (CVD). By controlling the thickness of the silica shell, hollow carbon spheres (HCSs) with different diameters can be obtained. The use of ethylene as the carbon precursor in the CVD process produces the materials in a single step without the need to remove the surfactant. The mechanism of formation and the role played by the surfactant, C18TMS, are investigated. The materials have large potential in double‐layer supercapacitors, and their electrochemical properties were determined. HCSs with thicker mesoporous shells possess a larger surface area, which in turn increases their electrochemical capacitance. The samples prepared at a lower temperature also exhibit increased capacitance as a result of the Brunauer–Emmett–Teller (BET) area and larger pore size.     

Process study of thermal plasma chemical vapor deposition of diamond,part I: Substrate material,temperature, and methane concentration

Effects of process parameters on diamond film synthesis in DC thermal plasma jet reactors are discussed including substrate material, methane concentration and substrate temperature. Diamond has been deposited on silicon, molybdenum, tungsten, tantalum, copper, nickel, titanium, and stainless steel. The adhesion of diamond film to the substrate is greatly affected by the type of substrate used. It has been found that the methane concentration strongly affects the grain size of the diamond films. Increased methane concentrations result in smaller grain sizes due to the increased number of secondary nucleations on the existing facets of diamond crystals. Substrate temperature has a strong effect on the morphology of diamond films. With increasing substrate temperature, the predominant orientation of the crystal growth planes changes from the (111) to the (100) planes. Studies of the variation of the film quality across the substrate due to the nonuniformity of thermal plasma jets indicate that microcrystalline graphite formation starts at the corners and edges of diamond crystals when the conditions become unfavorable for diamond deposition.     

Process study of thermal plasma chemical vapor deposition of diamond,part II: Pressure dependence and effect of substrate pretreatment

The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.     

Chemical Solution Deposition of ZnO Thin Films by an Aqueous Solution Gel Precursor Route

An aqueous chemical solution deposition method was used to prepare thin films of ZnO on SiO₂/Si (1 1 1) substrates. Starting from an aqueous solution of Zn acetate, citric acid and ammonia, very thin films could be deposited by spin coating. Heating parameters, necessary for thin film annealing, were determined using FTIR experiments on dried gel precursors, heated up to different temperatures. The morphology and the thickness of the films were investigated by SEM. It is found that homogeneous thin films with grain sizes of about 20 nm are formed. XRD experiments show that there is an indication that the films, crystallized at 500°C, exhibit preferential grain growth along the c-axis.     

Characteristics of Subtractive Anodic Stripping Voltammetry of Lead,Cadmium and Thallium at Silver‐Gold Alloy Electrodes

Silver‐gold alloy electrodes have been studied for the purpose of the quantitative determination of heavy metals by subtractive anodic stripping voltammetry, (SASV). The results have been compared with those obtained with the silver and gold electrodes. The 50/50 a/o Ag/Au alloy electrode is the most suitable for quantifying thallium in the presence of lead and cadmium. The separation of its peak from those of lead and cadmium is 200 mV, which is about twice the separation obtained on the pure metal electrodes and is also better than on mercury. The silver electrode is suitable for the simultaneous determination of thallium, lead and cadmium. The peaks of lead and cadmium overlap on the 50/50 alloy. Pure silver or pure gold can be used for simultaneous quantification of these two metals. The use of gold for quantifying lead and cadmium is more limited because the peak potential of cadmium is shifted in the negative direction as its concentration increases and at [Cd²⁺]>200 nM, the two peaks merge. SASV enables correction for background currents and is of utmost importance for obtaining well‐defined peaks. The peaks of lead, cadmium and thallium appear over a relatively narrow potential range (ca. 200 mV) on all the electrodes presented in this work. For this reason, the quantifying of a peak is based on the derivative at the inflection point of only one of its branches (ascending or descending). All SASV measurements were carried out without removal of oxygen.     

The Reactivity of Cr‐Te Superlattice Reactants and of Co‐deposited Cr‐Te Films: Studies with in‐situ X‐ray Diffractometry

The reactivity of a Cr‐Te multilayer film consisting of 326 Cr/Te double‐layers with about 88(3) at% Te was investigated with in‐situ X‐ray diffraction. The occurrence of a superstructure reflection caused by the multilayer system is observed. During the annealing procedure between 80 and 90 °C the layer‐by‐layer arrangement is destroyed and elemental Te crystallizes. After 6 h isothermal annealing at 140 °C CrTe₃ starts to crystallize. The amount and the crystal size of CrTe₃ increase with raising temperature and Te is consumed during the growth process. At 220 °C the formation of crystalline Cr₂Te₃ is observed and between 220 and 260 °C CrTe₃ is completely decomposed into Cr₂Te₃. The two Cr tellurides grow as highly textured materials. The size of CrTe₃ crystals is significantly larger than that of Cr₂Te₃. For a co‐deposited Cr‐Te film with composition 77(3) at% Te the tri‐telluride and elemental Te crystallize simultaneously. The texture of CrTe₃ is less pronounced and different reflections of the tri‐telluride occur besides the (h00)‐reflections. Up to 160 °C a pronounced increase of the crystallite size is observed and the crystals are significantly larger than those obtained with the multifilm sample. At 130 °C the crystallization kinetics seem to be controlled by nucleation.     

Patterning catalyst via inkjet printing to grow single-walled carbon nanotubes

We demonstrated a method to pattern catalyst via inkjet printing to grow SWNTs, using metal salt solutions as the inks and an ordinary office-use printer. We printed water solutions of cobalt acetate on hydrophilic Si substrates and grew high quality SWNT films.