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51.
Cubic antimonic acid (Sb2O5·nH2O) films were successfully prepared on stainless steel and Si(100) substrates by electrophoretic deposition (EPD) using two types of sols. The sols were prepared by reacting an H2O2 aqueous solution with Sb(O-i-C3H7)3 or metallic Sb powder. The resulting films were found to consist of fine particles of cubic Sb2O5·nH2O single crystals with uniform particle sizes of 30 nm and 150 nm. The weight of the Sb2O5·nH2O deposit on the anode Si(100) substrate by EPD increased linearly with the current density in the range of 0–0.67 mA cm–2, when the sol pH was over 7. The proton conductivity of the polycrystalline Sb2O5·nH2O discs, formed from the two types of sols, was evaluated by an ac impedance method at room temperature under controlled levels of relative humidity.  相似文献   
52.
Aerosol flame pyrolysis deposition method was applied to deposit the oxide glass electrolyte film and LiCoO2 cathode for thin film type Li-ion secondary battery. The thicknesses of as-deposited porous LiCoO2 and Li2O–B2O3–P2O5 electrolyte film were about 6 μm and 15 μm, respectively. The deposited LiCoO2 was sintered for 2 min at 700 °C to make partially densified cathode layer, and the deposited Li2O–P2O5–B2O3 glass film completely densified by the sintering at 700 °C for 1 h. After solid state sintering process the thicknesses were reduced to approximately 4 μm and 6 μm, respectively. The cathode and electrolyte layers were deposited by continuous deposition process and integrated into a layer by co-sintering. It was demonstrated that Aerosol flame deposition is one of the good candidates for the fabrication of thin film battery.  相似文献   
53.
IntroductionMethaneandcarbondioxidearetWomaincompositionsforthegreenhouseeffectandtheworldglobewanningll].ItisbeneficialtoourlivingenviroIUnenttocontrolthereleaseofthesetwogases.Theconversionofmethanetothecommonfeedstocksynthesisgas(carbonmonoxideandhydro…  相似文献   
54.
A novel approach to the fabrication of metal ring-disk (RD) microelectrodes is presented that employs flexible chemical vapor deposition (CVD) and electrode modification techniques. Specifically, the development of a copper ring-disk microelectrode is described utilizing a combination of CVD coating, electroetching, and electroplating. Initially, a 25 μm diameter tungsten wire is concentrically coated by CVD with an insulating layer of silica, a layer of tungsten metal, and finally, a second outer layer of silica. The copper surface was prepared by first creating micrometer cavities by electrochemical etching the tungsten in hydroxide solutions followed by electrodeposition of copper from aqueous solutions of Cu(II). Each step of the process was characterized by scanning electron microscopy, optical microscopy, and cyclic voltammetry, demonstrating the preparation of a viable metal-based dual ring-disk microelectrode system. For the purpose of demonstrating the concept of introducing specific selectivity into the device, amperometric detection of galactose in 0.1 M NaOH was performed at +0.60 V in bulk solution and after flow injection analysis in a capillary column.  相似文献   
55.
The main approaches that have been taken to chemically modify polymer surfaces are introduced and reviewed. These are wet chemical oxidation, plasma treatment, classical organic chemistry, and attachment of polymer chains. The extent to which each of these approaches can produce the specific modifications desired is discussed, and any unwanted effects that commonly occur are cited. Finally, the need for using several methods of surface analysis in concert to obtain adequate surface characterization is described.  相似文献   
56.
1,3,5,7-Tetramethylcyclotetrasiloxane (H4) was deposited on silica gel at 80°C by utilizing a chemical vapor deposition (CVD) method, where it was catalytically polymerized to form a surface coating of polymethylsiloxane (PMS). Treated silica gel (PMS-Si) increased in weight up to a plateau level, and there was no further increase with increasing reaction time. The film of PMS was partially cross linked; typical values of crosslinking ratio and film thickness were 2% and 0.6 nm, respectively. An anionic ion exchanger containing diethylamino groups was synthesized from PMS-Si by hydrosilylation of allyl glycidyl ether followed by treatment with diethylamine. Its structure was confirmed by13C and29Si CP/MAS NMR spectroscopy and FT-IR spectrophotometry. Characterization of silica gel (DEA-Si) modified with diethylamino group was evaluated by a packing of the column for liquid chromatography. As a mixture of five nucleotides was completely separated, it was recognized that DEA-Si was operated by ion exchange action. Because the surface of the silica gel was covered with hydrophobic PMS, the peak heights and retention times did not change after washing of the column with alkaline solution.  相似文献   
57.
功能性超薄有序分子沉积膜的制备及其结构研究   总被引:14,自引:4,他引:14  
1991年G.Decher等首次探讨了阴阳离子与聚电解质交替沉积制备有机超薄膜的方法。我们在完善成膜技术和发展成膜基质的基础上,详细研究了其成膜过程与膜的结构,并定义这种新的自组装超薄有序膜为分子沉积膜——MD膜。MD膜是利用阴阳离子的静电吸附反应特性,通过相反离子体系的交替分子沉积制备的层状有序自组装多层超薄膜。需要指出的是,分子沉积既是有机超薄膜的制备技术,本身又是一种自组装超薄有序膜。MD膜制备工艺简单,热稳定性和长期稳定性好,不受基体形状与面积限制。  相似文献   
58.
《Electroanalysis》2004,16(16):1305-1310
A novel amperometric biosensor was constructed for the determination of phenols in pure organic phase. This biosensor was fabricated by immobilizing tyrosinase in a titania sol‐gel membrane which was obtained with a vapor deposition method. This method was facile and avoided the calcination step needed in conventional titania sol‐gel process. The titania sol‐gel membrane could effectively retain the essential water layer around the enzyme molecule needed for maintaining its activity in organic phase. The experimental parameters such as solvent and operating potential were optimized. At ?100 mV this biosensor showed a good amperometric response to phenols in pure chloroform without any mediator and rehydration of the enzyme. For catechol determination the sensor exhibited a fast response of less than 5 seconds. The sensitivity of different phenols was as follows: catechol > phenol > p‐cresol. Additionally, the apparent Michaelis‐Menten constants of the encapsulated tyrosinase to catechol, phenol and p‐cresol were found to be 0.15±0.003, 0.17±0.008 and 0.21±0.004 mM, respectively. The biosensor had also good reproducibility and stability. This work provided a promising platform for the construction of pure organic phase biosensors and the determination of substrates with poor water solubility.  相似文献   
59.
The magnitude of the χ xxxx (3) element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (~450Å) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050°C. In addition, the correlation between the magnitude of χ xxxx (3) with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.  相似文献   
60.
AlGaN-based ultraviolet-B light-emitting diodes (UVB-LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB-LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate-dominated strain-modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano-patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al0.55Ga0.45N underlayer and Al0.28Ga0.72N/Al0.45Ga0.55N MQWs is successfully suppressed. As a result, an outstanding UVB-LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil2 UVB-LED chip shows a wall-plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm−2, showing excellent stability. The here-developed UVB-LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN-based UVB-LEDs.  相似文献   
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