Kinematics of layered reinforced-concrete planar beam finite elements with embedded transversal cracking

In this work crack formation and development is addressed and implemented in a planar layered reinforced-concrete beam element. The crack initiation and growth is described using the strength criterion in conjunction with exact kinematics of the interlayer connection. In this way a novel embedded-discontinuity beam finite element is derived in which the tensile stresses in concrete at the crack position reaching the tensile strength will trigger a crack to open. Since the element is multi-layered, in this way the crack is allowed to propagate through the depth of the beam. The cracked layer(s) will involve discontinuity in the cross-sectional rotation equal to the crack-profile angle, as well as a discontinuity in the position vector of the layer’s reference line. A bond–slip relationship is superimposed onto this model in a kinematically consistent manner with reinforcement being treated as an additional layer of zero thickness with its own material parameters and a constitutive law implemented in the multi-layered beam element.     

Regioselective Hydroformylation of Internal and Terminal Alkenes via Remote Supramolecular Control

Regioselective catalytic transformations using supramolecular directing groups are increasingly popular as it allows for control over challenging reactions that may otherwise be impossible. In most examples the reactive group and the directing group are close to each other and/or the linker between the directing group is very rigid. Achieving control over the regioselectivity using a remote directing group with a flexible linker is significantly more challenging due to the large conformational freedom of such substrates. Herein, we report the redesign of a supramolecular Rh–bisphosphite hydroformylation catalyst containing a neutral carboxylate receptor (DIM pocket) with a larger distance between the phosphite metal binding moieties and the DIM pocket. For the first time regioselective conversion of internal and terminal alkenes containing a remote carboxylate directing group is demonstrated. For carboxylate substrates that possess an internal double bond at the Δ-9 position regioselectivity is observed. As such, the catalyst was used to hydroformylate natural monounsaturated fatty acids (MUFAs) in a regioselective fashion, forming of an excess of the 10-formyl product (10-formyl/9-formyl product ratio of 2.51), which is the first report of a regioselective hydroformylation reaction of such substrates.     

Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate

GaN-based blue light-emitting diodes (LEDs) on various patterned sapphire substrates (PSSs) are investigated in detail. Hemispherical and triangular pyramidal PSSs have been applied to improve the performance of LEDs compared with conventional LEDs grown on planar sapphire substrate. The structural, electrical, and optical properties of these LEDs are investigated. The leakage current is related to the crystalline quality of epitaxial GaN films, and it is improved by using the PSS technique. The light output power and emission efficiency of the LED grown on triangular pyramidal PSS with optimized fill factor show the best performance in all the samples, which indicates that the pattern structure and fill factor of the PSS are related to the capability of light extraction.     

IC基板传输机器人末端执行器结构拓扑优化设计

在半导体封装基板检测的传输过程中,末端执行器对其快速稳定高效率的传输起着关键作用。在满足设计强度、刚度的条件下,以末端执行器轻量化为目标,建立了末端执行器的三维模型,利用有限元分析软件ANSYS对基板传输机器人末端执行器进行静力学和模态分析,得到末端执行器在最大载荷情况下的应力、应变特性和对应的振型,并对其进行拓扑优化设计,根据拓扑优化结果建立新的末端执行器结构,对新的结构进行强度校核,验证设计方案的有效性。研究结果表明,优化后末端执行器的前四阶固有频率都大于伺服电动机的回转频率(50Hz),质量减少了26.7%,较好地实现了轻量化的目标,同时为后续的相关产品研制提供了一种新的技术方案。     

硅衬底GaN基LED薄膜芯片的应力调制

将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片,并对其进行不同温度的连续退火,通过高分辨X射线衍射(HRXRD)研究了连续退火过程中GaN薄膜芯片的应力变化。研究发现:垂直结构LED薄膜芯片在160~180℃下退火应力释放明显,200℃时应力释放充分,GaN的晶格常数接近标准值。继续升温应力不再发生明显变化,GaN薄膜的晶格常数只在标准晶格常数值附近波动。扫描电子显微镜给出的bonding层中Ag-In合金情况很好地解释了薄膜芯片应力的变化。     

Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect

The semiconductor technologies evolution allows greatly reducing noise impact on products and many structures have been created to reduce its effect. However, this paper presents the apparition of a noise issue during the production of a mixed-mode device dedicated to automotive applications. The research investigations concerned the fact that failure was not detected at test level but at customer level; therefore, it was determinant to understand the root cause of this failure mode to drive corrective actions in order to secure customer. The challenge was to analyse noise in Failure Analysis (FA) without fault spatial localization results. Indeed, Light Emission Microscopy (EMMI) and Thermal Laser Stimulation (ex: Soft Defect Localization – SDL) were unable to provide any defective area in the product. The lack of failing device identification led us to combine electrical and design analyses in order to define hypothesis on the failure origin. It was then possible to drive physical investigations through different approaches, using physical cross-section, Secondary Ion Mass Spectrometry (SIMS) and Scanning Capacitance Microscopy (SCM) techniques. Finally, the obtained complementary results will be discussed and an explanation of the failure mechanism will be presented as the root cause issue, allowing defining the defective step in production process.     

An operator splitting strategy for fluid–structure interaction problems with thin elastic structures in an incompressible Newtonian flow

We present a computational framework based on the use of the Newton and level set methods to model fluid–structure interaction problems involving elastic membranes freely suspended in an incompressible Newtonian flow. The Mooney–Rivlin constitutive model is used to model the structure. We consider an extension to a more general case of the method described in Laadhari (2017) to model the elasticity of the membrane. We develop a predictor–corrector finite element method where an operator splitting scheme separates different physical phenomena. The method features an affordable computational burden with respect to the fully implicit methods. An exact Newton method is described to solve the problem, and the quadratic convergence is numerically achieved. Sample numerical examples are reported and illustrate the accuracy and robustness of the method.     

Random matrix theory for transition strength densities in finite quantum systems: Results from embedded unitary ensembles

Embedded random matrix ensembles are generic models for describing statistical properties of finite isolated interacting quantum many-particle systems. For the simplest spinless fermion (or boson) systems, with say m$m$ fermions (or bosons) in N$N$ single particle states and interacting via k$k$-body interactions, we have EGUE(k$k$) [embedded GUE of k$k$-body interactions] with GUE embedding and the embedding algebra is U(N)$U\left(N\right)$. A finite quantum system, induced by a transition operator, makes transitions from its states to the states of the same system or to those of another system. Examples are electromagnetic transitions (then the initial and final systems are same), nuclear beta and double beta decay (then the initial and final systems are different), particle addition to or removal from a given system and so on. Towards developing a complete statistical theory for transition strength densities (transition strengths multiplied by the density of states at the initial and final energies), we have derived formulas for the lower order bivariate moments of the strength densities generated by a variety of transition operators. Firstly, for a spinless fermion system, using EGUE(k$k$) representation for a Hamiltonian that is k$k$-body and an independent EGUE(t$t$) representation for a transition operator that is t$t$-body and employing the embedding U(N)$U\left(N\right)$ algebra, finite-N$N$ formulas for moments up to order four are derived, for the first time, for the transition strength densities. Secondly, formulas for the moments up to order four are also derived for systems with two types of spinless fermions and a transition operator similar to beta decay and neutrinoless beta decay operators. In addition, moments formulas are also derived for a transition operator that removes k₀$k_0$ number of particles from a system of m$m$ spinless fermions. In the dilute limit, these formulas are shown to reduce to those for the EGOE version derived using the asymptotic limit theory of Mon and French (1975). Numerical results obtained using the exact formulas for two-body (k=2$k=2$) Hamiltonians (in some examples for k=3$k=3$ and 4$4$) and the asymptotic formulas clearly establish that in general the smoothed (with respect to energy) form of the bivariate transition strength densities take bivariate Gaussian form for isolated finite quantum systems. Extensions of these results to bosonic systems and EGUE ensembles with further symmetries are discussed.     

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

An improved analytical model for the current-voltage (I-V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I-V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco^®-TCAD). The proposed model also illustrates the effectiveness of the gate-source distance scaling effect compared to the gate-drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I-V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates.     

大功率LED散热用微通道铝基板的有限元仿真

对带微通道的铝基板上封装的不同功率LED,用Comsol Multiphysics软件对其温度场进行了有限元模拟,重点研究了微通道的孔大小、孔间距、绝缘层的厚度和热导率对基板散热性能的影响,结果表明:铝基板厚度为1.5mm左右,微通道方形孔,孔长0.8mm,孔间距0.8mm,绝缘层厚度50μm,热导率1.5 W/(m·K),为最佳散热性能铝基板.微通道铝基板封装3W灯珠与普通铝基板和氮化铝基板相比,热阻分别下降了5.44和3.21℃/W,表明微通道铝基板能更好地满足大功率LED散热的需求.