Construction and development of a new single-column simulated moving bed system on the laboratory scale

Simulated moving bed (SMB) chromatography combines high productivity and high purities with reduced buffer consumption. We have developed a laboratory scale single column SMB (SC-SMB) unit with all four separation zones in one column. Distributors embedded within the chromatographic medium allow introduction and withdrawal of liquid between the zones. This single column unit exhibits homogenous packing in all zones, reduced headspace, less complex tubing, fewer valves, and almost undisturbed plug flow between the separation zones. The separation performance of the column was investigated with two different binary model mixtures. Furthermore, the SC-SMB unit is operated with a modified AKTA Explorer workstation, which has been specifically developed for the handling of biological fluids.     

Crack formation in metallized single crystal silicon substrates

Ball bonding of metallized silicon substrates has been simulated by microindentation, with a hemispherical diamond indentor, of (100) silicon wafers that contained aluminum film layers. The indentation loads varied up to 35N and the thickest aluminum film, composed of four layers, was 100 × 10^-6 m. The radial cracks in the silicon, beneath the aluminum film, were measured as a function of indentation load and aluminum film thickness, and compared to that of unmetallized silicon. The crack lengths have been used to determine the fracture toughness,K _c = 24.4 ± 4.9 MPam^0.5, which is twice the value obtained by Vickers indentation experiments. A model describing the relationship between the film thickness versus the radial crack length is presented.     

Intelligent Industry Monitoring Network Architecture UPnP Based

Aiming at poor self-adapting performance of Industry monitoring network （IMN） based on server/client mode, an intelligent IMN architecture realization method based on Universal plug and play （UPnP） was put forward. According to field distribution condition and running characteristics of industrial devices, topological IMN model centralized UPnP was established. Combining embedded system technology, monitoring information interaction mechanism was designed using signal communication method, and intelligent management for IMN was realized by the key data structures of Parameter configuration table （PCT） and Control device node （CDN）. Industrial experiments prove that this method can realize the anticipated functions of seamless link, zero-configuration and self-recognition.     

Placement of Substrate Contacts to Minimize Substrate Noise in Mixed-Signal Integrated Circuits

The placement of substrate contacts in epi and non-epi technologies is analyzed in order to control and reduce the substrate noise amplitude and spreading. The choice of small or large substrate contacts or rings for each of the two major technologies is highlighted. Design guidelines for placing substrate contacts so as to improve the noise immunity of digital circuits in mixed-signal smart-power systems are also presented.     

High performance set associative translation lookaside buffers for low power microprocessors

A fast low power four-way set-associative translation lookaside buffer (TLB) is proposed. The proposed TLB allows single clock phase accesses at clock frequencies above 1 GHz. Comparisons to a conventional fully associative CAM tagged TLB, which is the type most commonly used in embedded processors, with the same number of entries on a 65 nm low standby power process show that the proposed design has 28% lower delay and up to 50% lower energy delay product. Unlike previous set-associative TLBs, which replicate the TLB to support multiple page sizes, multiple page sizes are supported on a way-by-way basis. Alternative conventional CAM tagged and set-associative TLBs are investigated with regard to access latency, power dissipation and hit rates.     

高层数印制板对位精度控制

文章讨论了温度、湿度对底片胀缩的影响，并结合底片胀缩、单片胀缩的情况探讨了高层数印制板生产对位精度的控制方法。     

Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator

Ultrathin strained-Si/strained-Ge heterostructures on insulator have been fabricated using a bond and etch-back technique. The substrate consists of a trilayer of 9 nm strained-Si/4 nm strained-Ge/3 nm strained-Si on a 400-nm-thick buried oxide. The epitaxial trilayer structure was originally grown pseudomorphic to a relaxed Si_0.5Ge_0.5 layer on a donor substrate. Raman analysis of the as-grown and final transferred layer structures indicates that there is little change in the strain in the Si and Ge layers after layer transfer. These ultrathin Si and Ge films have very high levels of strain (∼1.8% biaxial tension and 1.4% compression, respectively), and are suitable for enhanced-mobility field-effect transistor applications.     

PDMS-Au复合基底上多环芳烃分子的表面增强拉曼光谱

利用聚二甲基硅氧烷(PDMS)对有机物的富集功能,通过在金纳米粒子单层膜(Au MLF)表面旋涂薄层PDMS膜制备PDMS-Au MLF复合表面增强拉曼光谱(SERS)基底.研究了SERS增强性能与旋涂液浓度及稀释溶剂间的关系,考察了复合基底增强活性的均匀性.研究发现,采用叔丁醇为稀释溶剂,浓度为2%(质量分数)的旋涂液时所得复合基底表面多环芳烃(PAHs)的SERS信号强度最高,且此基底SERS信号强度偏差小于10%.分别以PDMS-Au MLF复合材料和Au MLF作为基底,对比研究了对萘、蒽、菲和芘4种多环芳烃的SERS检测能力.结果表明,PDMS-Au MLF复合基底对以上4种有机物的检出限分别为10~(-6),10~(-7),10~(-8)及10~(-7)mol/L,相比于单一Au MLF基底,其检测限至少降低了1个数量级,这主要源自于PDMS对PAHs的富集作用,且此类复合基底可用于多种多环芳烃混合物的特征识别.     

Integration of InGaP/GaAs/Ge triple‐junction solar cells on deeply patterned silicon substrates

We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma‐enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 10⁷/cm². The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum. Copyright © 2016 John Wiley & Sons, Ltd.     

PCB用高频（毫米波）材料与技术概述

文章概述了商用毫米波PCB材料的选择与技术。目前,商用微波设计走向毫米波体系并强烈要求薄型、高性能的基板材料。