网络无障碍技术研究及成果

随着信息技术的迅速发展,信息技术给社会和人们的生活带来了巨大的影响,然而相当数量的残障人士在获取信息方面存在着一定的障碍。首先介绍了信息无障碍所要解决的问题;然后着重就网站内容无障碍介绍了当前解决网站内容无障碍的两个主要途径:开发先进的技术支持和规范网站设计;接着介绍了哈尔滨亿时代数码科技开发有限公司在信息无障碍方面所做的工作:开发亿时代蓝天语音软件和盲人计算机、开通我国第一个无障碍网站—中国盲人网、拟定《网站内容可接入性设计指南》并开发相应的自动检测软件。     

An indirect probe of the possible half-metallic nature of LiFePO4 using resonant inelastic X-ray scattering

The Fe site in LiFePO₄ was probed resonantly and non-resonantly at the L_2,3 edge. A suspected half-metal, the experimental results were compared to band structure calculations to understand the electronic structure. We found that the probability of promoting an electron to the unoccupied band through simple photoexcitation or through scattering is highly influenced by magnon-exciton coupling. We have also found evidence that the correlation self-energy has a momentum-dependant component, causing spectral renormalization of the Fe 3d PDOS. Our experimental results are consistent with the predicted band, structure of LiFePO₄.     

First-principles energy band calculation for undoped and N-doped InTaO4 with layered wolframite-type structure

The electronic structures of undoped and N-doped InTaO₄ with optimized structures are calculated within the framework of the density functional theory. Calculated lattice constants are in excellent agreement with experimental values, within a difference of 2%. The valence band maximum (VBM) is located near the middle point on the ZD line and the conduction band minimum (CBM) near the middle point on the DX line. This means that InTaO₄ is an indirect-gap material and a minimum theoretical gap between VBM and CBM is ca. 3.7 eV. The valence band in the range from −6.0 to 0 eV mainly consists of O 2p orbitals, where In 4d5s5p and Ta 5d orbitals are slightly hybridized with O 2p orbitals. On the other hand, the conduction band below 5.5 eV is mainly composed of the Ta 5d orbitals and the contributions of In and O orbitals are small. The band gap of N-doped InTaO₄ decreases by 0.3 eV than that of undoped InTaO₄, because new gap states originating from N 2p orbitals appear near the top of the valence band. This result indicates that doping of N atoms into metal oxides is a useful method to develop photocatalysts sensitive to visible light.     

用于电压调节器的PZST反铁电陶瓷研究

通过调节Zr^4＋／Ti^4＋比对La^3＋、Sr^2＋掺杂的PZST反铁电陶瓷进行分析，从中得到两种能用于电压调节器件的陶瓷材料。在20～80℃时，这两种材料的相变电场随温度变化不大。材料的反向开关时间为1～12μs，开关时间随反向相变电场的升高而减小，且与样品的尺寸有关。     

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n⁻ drift region.     

变频调速技术在电子皮带称料机上的应用

本文通过变频装置在瑞士HASLER公司生产的电子称量料机上的应用，详细介绍了其变频调速的设计原理、控制过程和性能参数。对今后实际工作中，应用变频器调速对旧设备进行改造有一定的帮助。     

机载电子设备智能故障诊断技术研究

智能故障诊断在现代飞行器及先进的武器装备及其电子设备的设计、生产和维护过程中都起着关键的作用。介绍了现有电子设备智能故障诊断方法,包括基于规则的方法、故障树方法、模糊诊断方法、基于人工神经网络的方法和信息融合故障诊断方法,阐述各自的特点和局限性,讨论了航空电子设备智能故障诊断发展,提出了集成诊断技术、综合测试与诊断策略、机器学习方法和软件工具的开发等关键技术。     

HPL-2000CO2激光器工作气体的试验研究

针对横流HPL-2000 CO2激光器工作气体进行了试验研究，用LSQD35型冷水机组与HPL-2000激光器组成系统，能够在无氮工作气体的条件下稳定运行，使激光器运行成本大为降低。     

等离子体工艺引起的MOSFET栅氧化层损伤

在深亚微米 MOS集成电路制造中 ,等离子体工艺已经成为主流工艺。而等离子体工艺引起的栅氧化层损伤也已经成为限制 MOS器件成品率和长期可靠性的一个重要因素。文中主要讨论了等离子体工艺引起的充电损伤、边缘损伤和表面不平坦引起的电子遮蔽效应的主要机理 ,并在此基础上讨论了减小等离子体损伤的有效方法。     

A nanoscale field effect data storage of bipolar endo-fullerenes shuttle device

We investigated the internal dynamics of an electro-fluid shuttle memory element, consisting of K⁺@C₆₀ and F⁻@C₆₀ encapsulated in a C₆₄₀ nanocapsule. Energetics and operating responses of bipolar endo-fullerenes shuttle memory device, (K⁺@C₆₀–F⁻@C₆₀)@C₆₄₀, were examined by classical molecular dynamics simulations under the external force fields.