Temperature dependant flash memory erase transient simulation (Part I)

We present a detailed and accurate physics based transient simulation for modeling flash memory erasing at ambient and non-ambient temperatures. Typical cells are erased by moving electrons from the floating gate to the drain, source or substrate. Part I of this paper addresses substrate erase modeling using a simulation based on the solution to Poisson’s equation with temperature as an independent variable. The goal of this paper is to demonstrate the derivation of an accurate erase simulation and show the effects of temperature on the threshold voltage shift during the erase process. Several papers have been published on this topic but fail to present detailed derivations and none using this exact set of equations to model the temperature dependent erasing process.     

物联网与标准

物联网本质是 ICT 与国民生产中更多行业的联姻。标准是促进物联网应用形成规模经济效应和避免碎片化的重要手段,在涉及重大基础设施建设的项目中标准更是客户采购的前提条件。通信行业达成共识成立全球性的物联网标准组织迈出了重要的一步,以业务层和终端管理的标准化作为起点是合理的步骤,也符合整个 ICT 行业的利益。     

First principle study of Nb defects in anatase (101) TiO2 surface

In this work, effects of Niobium (Nb) defects on TiO₂ surface using density functional theory (DFT) are investigated. Based on formation energy of the defects, their occurrences in two different extreme conditions, O-rich and O-poor conditions, are evaluated. Effects of Nb defects on surface and its electronic structure are studied and it is demonstrated that Nb doping widens valence band in deep energy level leaving the band gap without any change and it also lowers oxygen vacancy defect concentration due to the stronger bonding of Nb_sub defect with oxygen atoms specially bridging oxygen (most probable defect site for Oxygen vacancy). Higher density of Nb substitutional defects (Nb_sub) are examined and it is shown that higher density doping of TiO₂ surface leads to uniform distribution of defects over the anatase structure as a result of interaction of Nb defects when they are close and this fact prevents segregation of Nb atoms in Nb-doped TiO₂.     

CCD图像传感器的高分辨率技术

评价了 Ｃ Ｃ Ｄ 图像传感器与电子束摄像管的性能。分析了高分辨率 Ｃ Ｃ Ｄ 像感器的技术难点。阐述了解决这些问题的技术措施：双 Ｈ－ Ｃ Ｃ Ｄ 移位寄存器、 Ｓ Ｒ Ｄ 法、 Ｃ Ｃ Ｓ 法及微透镜技术等。给出了三种新器件的技术指标,并与常规方法构成的器件进行了比较     

FPGA实现的电子内窥镜与计算机接口

介绍了一种新型的可编程逻辑器件ＦＰＧＡ及其开发工具ＭＡＸ＋ＰＬＵＳⅡ,并使用ＦＬＥＸ１０Ｋ３０开发了电子内窥镜系统与计算机ＩＳＡ总线的接口系统,并说明系统的结构和工作原理。     

MOS器件的ESD失效

静电放电(ESD)对半导体器件,尤其是金属氧化物半导体(MOS)器件的影响日趋凸显,而相关的研究也是备受关注.综述了静电放电机理和3种常用的放电模型,遭受ESD应力后的MOS器件失效机理,MOS器件的两种失效模式;总结了ESD潜在性失效灵敏表征参量及检测方法;并提出了相应的静电防护措施.     

N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals

We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al₂O₃ layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm²/Vs and an on/off current ratio of about 10². In addition, the electrical characteristics of the TFT on bent substrates are briefly described.     

面向汽车应用的功率半导体器件与封装

汽车电子技术不断发展,越来越多的新器件、新封装应用在汽车中,这对汽车用功率半导体器件与封装提出很大挑战。文章介绍了不同种类功率半导体器件的特点,具体分析了当前主要的汽车用功率器件的分类、结构、封装与可靠性,并给出这一领域的发展现状。期望通过本综述能为发展国内汽车用功率半导体器件提供更广阔的视野。     

Radiation Effects of Proton Particles in Memory Devices

In this letter, we study the impact of single event upsets (SEUs) in space or defense electronic systems which use memory devices such as EEPROM, and SRAM. We built a microcontroller test board to measure the effects of protons on electronic devices at various radiation levels. We tested radiation hardening at beam current, and energy levels, measured the phenomenon of SEUs, and addressed possible reasons for SEUs.     

电子商务相关技术的发展

在计算机及网络技术发展的推动下,电子商务将成为２１世纪经济增长的驱动力,当前Ｉｎｔｅｒｎｅｔ电子商务主要涉及Ｉｎｔｅｒｎｅｔ电子商务安全性,网络的带以及用户界面友好程度等技术问题。在安全性方面,目前国际上采用公开和秘密钥和密关系来进行数据加密;交易过程安全方面最重要的电子协议（ＳＥＴ）的实施;电子支付的４种主要手段则都有相应的安全保护措施。此外,网络的宽带化、友好的用户界面是以广泛应用的必然要求。