Electronic structure and absolute band edge position of tetragonal AgInS2 photocatalyst: A hybrid density functional study

Energy bands, effective mass of carriers, absolute band edge positions and optical properties of tetragonal AgInS₂ were calculated using a first-principles approach with the exchange correlation described by B3LYP hybrid functional. The results indicate that tetragonal AgInS₂ has a direct band gap of 1.93 eV, which reproduce well experimental value. Calculated effective masses of electrons and holes are both small which are beneficial to separation and migration of electron and hole pairs. This implies that AgInS₂ has good photocatalytic performance. The calculated optical characteristics indicate that AgInS₂ has a slight anisotropy for both the real and imaginary parts of the dielectric function and exhibits large optical absorption in the visible light region. Furthermore, the calculated band edge positions in (100), (010) and (001) surfaces indicate that tetragonal AgInS₂ is beneficial to the reduction and oxidation of water to hydrogen and oxygen under visible light irradiation.     

面向消费类电子产品的自动化生产线成组技术

针对现代消费类电子产品快速更新换代的现状, 介绍了该类产品的自动化生产线成组技术,阐述了通过度量消费类电子产品相似性和派生性特征,对产线进行成组编码的原理,研究产线工位单元的建模方法,描述了建模内容,并通过有无装载板的产线结构,论述了产线成组编码集成的途径和方法.     

车载电子设备机柜布线工艺设计

对电子机柜传统的走线方式进行了分析、解剖，提出了新的走线方案模式，从工艺角度对机柜走线结构进行了改进设计，使之更适合于车载机柜的布线要求。     

光电设备电子机柜布线工艺研究

作为信号和电能载体的导线，同时也是噪声的载体和外来噪声侵入设备的媒体。描述了噪声通过导线侵入设备内部的方式，通过降低噪声的途径确定了机柜布线的原则，介绍了布线的要求和方法，最后提出了用布线槽布线的建议。     

提高托盘利用效率的重要手段——电子信息化管理

托盘能否有效运用对物流的畅通与否关系重大,这已经引起了国内外专家和学者们的重视,并就此制定了托盘电子信息化管理系统,旨在更合理地使用托盘,推进托盘一体化和共用系统的建立。而RFID技术在托盘的电子信息化管理的应用更将大大提高物流的效率与准确性,托盘电子信息化管理将成为今后托盘管理的趋势。     

光互连技术的研究现状及发展

本文首先总结了光学互连的主要实现途径，然后评述了光互连的研究现状与最新发展，通过对存在的问题分析，最后给出了有关的结论。     

Structures and stability of Al<Subscript><Emphasis Type="Bold">7</Emphasis></Subscript>C and Al<Subscript><Emphasis Type="Bold">7</Emphasis></Subscript>N clusters

We report results of the atomic and electronic structures of Al₇C cluster using ab initio molecular dynamics with ultrasoft pseudopotentials and generalized gradient approximation. The lowest energy structure is found to be the one in which carbon atom occupies an interstitial position in Al₇ cluster. The electronic structure shows that the recent observation [Chem. Phys. Lett. 316, 31 (2000)] of magic behavior of Al₇C^- cluster is due to a large highest occupied and lowest unoccupied molecular orbital (HOMO-LUMO) gap which makes Al₇C^- chemically inert. These results have further led us to the finding of a new neutral magic cluster Al₇N which has the same number of valence electrons as in Al₇C^- and a large HOMO-LUMO gap of 1.99 eV. Further, calculations have been carried out on (Al₇N)₂ to study interaction between magic clusters. Received 28 July 2001     

A simple electronic speckle shearing interferometer

A new speckle shearing interferometer with simple setup is proposed. The interferometer can be converted easily from a speckle referenced speckle pattern interferometer into a speckle shearing interferometer and vice versa. A beamsplitter and a mirror are used to generate the shear. The amount of shear can be adjusted by simply rotating the mirror. The costs involved are low and it is particularly useful for fast inspection in non-destructive testing of structural integrity. Both the theoretical studies of the method of measurement and the experimental results are presented.     

Electronic properties of Fibonacci quasi-periodic heterostructures

We study the electronic states of different GaAs-AlAs Fibonacci quasi-perodic heterostructures grown along the (001) direction. We employ an empirical tight-binding Hamiltonian including spin-orbit coupling together with the surface Green function matching method. We present results for the eighth Fibonacci generation formed from different building blocks. We compare these results with those of the constituent quantum wells and with those of heterostructures containing the same number of GaAs and AlAs slabs after periodic repetition of the building blocks. No Fibonacci spectrum is found in the energy regions near the conduction and valence band edges of GaAs. A selective localization of the local density of states in the GaAs layers is found for many electronic states.     

Electronic properties of model quantum-dot structures in zero and finite magnetic fields

We have computed electronic structures and total energies of circularly confined two-dimensional quantum dots and their lateral dimers in zero and finite uniform external magnetic fields using different theoretical schemes: the spin-density-functional theory (SDFT), the current-and-spin-density-functional theory (CSDFT), and the variational quantum Monte Carlo (VMC) method. The SDFT and CSDFT calculations employ a recently-developed, symmetry-unrestricted real-space algorithm allowing solutions which break the spin symmetry. Results obtained for a six-electron dot in the weak confinement limit and in zero magnetic field as well as in a moderate confinement and in finite magnetic fields enable us to draw conclusions about the reliability of the more approximative SDFT and CSDFT schemes in comparison with the VMC method. The same is true for results obtained for the two-electron quantum dot dimer as a function of inter-dot distance. The structure and role of the symmetry-breaking solutions appearing in the SDFT and CSDFT calculations for the above systems are discussed. Received 16 October 2001 and Received in final form 17 January 2002