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31.
c轴定向氮化铝薄膜的制备 总被引:3,自引:0,他引:3
利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。 相似文献
32.
We have grown thin carbon films by pulsed laser deposition and have investigated the extent to which the properties of such
films, as well as the processes responsible for these properties, are laser wavelength dependent. Films were grown by ablating
material from a graphite target onto room temperature Si(100) substrates with 1064 and 248 nm laser radiation. The films were
analyzed byin situ electron energy loss spectroscopy and byex situ Raman spectroscopy. The results indicated that films grown with 1064 nm ablation were graphitic, while those grown with 248
nm radiation were diamond-like. We have also examined the mass and kinetic energy distributions of the particles ejected from
graphite by the two laser wavelengths. The results indicated that irradiation of graphite with 1064 nm laser radiation results
in the ejection of a series of carbon cluster ions C
n
+
(1 ≤ n ≤ 30) with mean kinetic energies less than 5 eV. Ablation of graphite with 248 nm radiation results in the ejection
of primarily C
2
+
and C
3
+
with mean kinetic energies of 60 and 18 eV, respectively. These results suggest that large, low energy clusters produce graphitic
films, while small, high energy clusters produce films of diamond-like carbon. 相似文献
33.
查健江 《光纤与电缆及其应用技术》2004,1(4):14-19
人们对光纤生产过程中外汽相沉积(OVD)工艺的沉积机理的研究已经有好多年,但实际生产过程中,很多因素都会影响沉积速率和效率。为此我们通过试验,研究了决定沉积速率和沉积效率的主要因素,如预制棒表面温度、SiCl4流量和SiO2颗粒的温度等。 相似文献
34.
介绍了电泳技术制备YBCO高温超导厚膜的实验方法和YBCO高温超导厚膜的电学性质测量 ,讨论了在学生小型科研实验或设计实验中开展此实验的学时安排、注意事项和实验内容的扩展 . 相似文献
35.
G. K. Dalapati S. Chatterjee S. K. Samanta C. K. Maiti 《Applied Surface Science》2003,210(3-4):249-254
Thin films of titanium dioxide have been deposited on strained Si0.82Ge0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C3H7)4] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (Dit), fixed oxide charge density (Qf/q) and flat-band voltage (VFB) of as-deposited films were found to be 13.2, 40.6 Å, 6×1011 eV−1 cm−2, 3.1×1011 cm−2 and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications. 相似文献
36.
Kai Kamada Shintaro Udo Shuichi Yamashita Yuko Tsutsumi Yasumichi Matsumoto 《Solid State Ionics》2003,160(3-4):389-394
Quantitative analysis of metal cation doping by solid oxide electrochemical doping (SOED) has been performed under galvanostatic doping conditions. A M–β″-Al2O3 (M=Ag, Na) microelectrode (contact radius: about 10 μm) was used as cation source to attain a homogeneous solid–solid contact between the β″-Al2O3 and doping target. In Ag doping into alkali borate glass, the measured dopant amount closely matched the theoretical value. High Faraday efficiencies of above 90% were obtained. This suggests that the dopant amount can be precisely controlled on a micromole scale by the electric charge during electrolysis. On the other hand, current efficiencies of Na doping into Bi2Sr2CaCu2Oy (BSCCO) ceramics depended on the applied constant current. Efficiencies of above 80% were achieved at a constant current of 10 μA (1.6 A cm−2). The relatively low efficiencies were explained by the saturation of BSCCO grain boundaries with Na. By contrast, excess Na was detected on the anodic surface of ceramics at a constant current of 100 μA (16 A cm−2). In the present study, we demonstrate that SOED enables micromole-scale control over dopant amount. 相似文献
37.
Hiroshi Sakurai Fumitake Itoh Katsuyoshi Takano Hiromi Oike 《Journal of Physics and Chemistry of Solids》2004,65(12):2083-2088
A novel technique of measuring a magnetic Compton profile using the grazing angle geometry against a sample surface (Grazing Incidence Magnetic Compton Profile) has been successively developed. Measurements of a magnetic moment and a magnetic Compton profile are possible for a Fe 200 nm film on a thick glass substrate. The estimated thinnest limit for measurements is 100 nm for a Fe film. 相似文献
38.
CR-39 is a highly sensitive etched track detector for neutron monitoring and dosimetry applications but its dose equivalent response is strongly direction dependent with respect to the incident neutrons. This is considered to be a major drawback for their use. In the present study, an attempt has been made to develop a pyramid shaped dosimeter, which consists of polyethylene material of thickness 1 mm with the provision to hold three CR-39 films at an angle of 35° to each other. The response of CR-39 in this configuration under optimum electrochemical etching at elevated temperature have been found nearly angular independent and therefore the dosimeter can be used for neutron monitoring, i.e. personnel as well as area monitoring. 相似文献
39.
PECVDSiON薄膜的工艺控制,性质及其潜在应用 总被引:2,自引:1,他引:1
研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。 相似文献
40.
R. Niebuhr K. H. Bachem U. Kaufmann M. Maier C. Merz B. Santic P. Schlotter H. Jürgensen 《Journal of Electronic Materials》1997,26(10):1127-1130
Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried
ammonia using nitrogen (N2) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using
trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface.
Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N2O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations
in the range of 4×1016 cm−3 to 4×1018 cm−3 as measured by Hall effect. The observed carrier concentration increased with increasing N2O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B
exciton emission an exciton bound to a shallow donor. With increasing N2O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons.
These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius
and electronegativity arguments. 相似文献