Spectral Feature Analysis of Semiconductor Thin Disk Laser

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay...     

Stability of tokamak plasmas with internal transport barriers against high n ideal magnetohydrodynamic ballooning mode

A ballooning mode equation for tokamak plasma, with the toroidicity and the Shafranov shift effects included, is derived for a shift circular flux tokamak configuration. Using this equation, the stability of the plasma configuration with an internal transport barrier （ITB） against the high n （the toroidal mode number） ideal magnetohydrodynamic （MHD） ballooning mode is analysed. It is shown that both the toroidicity and the Shaftanov shift effects are stabilizing. In the ITB region, these effects give rise to a low shear stable channel between the first and the second stability regions. Out of the ITB region towards the plasma edge, the stabilizing effect of the Shaftanov shift causes the unstable zone to be significantly narrowed.     

基于扩散势能和自由体积的自扩散系数模型

在考虑自由体积和局部临界扩散势能的基础上,提出一种新的计算自扩散系数模型,并给出新模型中各个因子物理含义．同时还提出一种计算局部临界扩散势能的新方法,并应用于新模型．另外将衍生van der Waals状态方程应用于求解自由体积,式中所需径向分布函数由Morsali-Goharshadi方程得到．在相同条件下,新模型比原自由体积模型更准确．     

自由基-分子反应:F+Propene(CH2CHCH3)的从头算研究

采用从头算CCSD(T)/6-311 G(2d,2p)//B3LYP/6-311G(d,p)方法,研究了自由基-分子反应F CH2CHCH3的各种不同的反应通道．该反应主要是通过复合物形成机制进行,即F分别加到碳碳双键的两端形成自由基复合物1和2．这两种亚稳态自由基会解离成三种产物:H C3H5F、CH3 C2H3F和HF C3H5．理论计算结果表明,生成CH3 C2H3F是反应的主要通道,而生成H C3H5F和HF C3H5对产物也有一定的贡献．这一结果和实验符合得很好．     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.     

CO_2激光对兔脑组织血脑屏障的影响

同等功率和照射时间条件下,在14只家兔大脑皮质运用伊文思蓝染料和超微结构观察方法进行血脑屏障改变的研究。结果表明:CO_2激光作用十分表浅,且激光作用后的水肿层血脑屏障改变是可逆的。     

双极型静电感应晶体管开关时间的测量与分析

从理论和实验两方面对静电感应晶体管（ＢＳＩＴ）的开关时间进行了分析和测量，提出了简单的分析方法，将影响ＢＳＩＴ开关时间的各个因素归结为结构因子和材料因子，从而简化了分析影响ＢＳＩＴ开关时间的因素，对于ＢＳＩＴ的实际工艺，结构设计有指导意义。     

动情期家兔输卵管上皮及其分泌活动的电镜观察

本实验用透射电镜和扫描电镜观察了动情期家兔输卵管上皮。证实分泌细胞和纤毛细胞都有分泌功能，共分泌三种分泌物质。本文对这些分泌物质的分泌方式、分泌活动进行了研究和探讨。另外，发现上皮基膜下方始终有一层成纤维细胞形成的胞质膜伴行，据此，对血一输卵管腔屏障的构成亦进行了讨论。     

隧穿问题的数值算法

本文给出一种新的数值方法，用以计算隧道效应中的透射系数和相移。这个方法适用于任意形状的势垒，不仅可以计算透射系数，还可以计算透射波和反射波的相位。分析表明该方法具有很高的精度。     

BRILL－NOETHER MATRIX FOR RANK TWO VECTOR BUNDLES

Lei X be an arbitrary smooth irreducible complex projective curve, E (?) X a rank two vector bundle generated by its sections. The author first represents E as a triple {D1,D2,f}, where D1 , D2 are two effective divisors with d = deg(D1) + deg(D2), and f ∈ H0(X, [D1] |D2) is a collection of polynomials. E is the extension of [D2] by [D1] which is determined by f. By using f and the Brill-Noether matrix of D1 + D2, the author constructs a 2g X d matrix WE whose zero space gives Im{H0(X,[D1]) (?) H0(X, [D1] |D1)}(?)Im{H0(X, E) (?) H0(X,[D2]) (?) H0(X,[D2] |D2)}. From this and H0(X,E) = H0(X, [D1]) (?) Im{H0(X, E) (?) H0(X, [D2])}, it is got in particular that dimH0(X, E) = deg(E) - rank(WE) + 2.