Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

多带OFDM-UWB系统峰均功率比降低方法研究

针对多带OFDM—UWB信号存在高峰均功率比的问题，提出了利用扩展与交织降低系统信号峰均功率比的方法。该方法通过对传输数据进行正交扩展与交织，使得进入多载波调制的数据趋于高斯分布，减小了传输数据自相关函数的旁瓣峰值，降低了OFDM-UWB信号的峰均功率比。由于采用正交矩阵进行扩展，扩展前后的数据传输速率保持不变。仿真结果表明，扩展与交织可以有效地降低信号峰均功率比2-5dB左右。同时该方法还具有抗窄带干扰的鲁棒性。     

一种改进的新三步搜索算法

在对三步法工作原理进行研究的基础上提出了新三步搜索算法（NITSS）。该方法充分利用视频序列运动矢量概率分布上的中心偏置特性．在三步搜索算法的基础上引入了十字型分布的4个点构成搜索点群。实验结果表明。新三步搜索算法解决了三步法的小运动估计效果较差问题．提高了搜索精度，保持了三步法的高效率。     

掺镱双包层高功率光纤激光器输出特性研究

对线形腔掺镱双包层高功率光纤激光器的输出特性进行了研究 ,通过求解速率方程 ,得到了激光器泵浦阈值功率、输出光功率和斜率效率的表达式。分析了光纤长度、腔镜反射率和泵浦波长等因素对激光器阈值功率、输出光功率和斜率效率的影响 ,为高功率光纤激光器的优化设计提供了理论依据     

计量用脉冲Nd：YAG倍频激光器及其电源

介绍了脉冲Nd:YAG倍频激光器双波长（1064／532nm）3种输出的激光光路。1064nm输出的动静比可达0.40；KTP晶体外腔倍频效率可达0.50。介绍了稳定可靠的调Q电路、逻辑控制电路和开关电源的主电路及其参数计算。     

8VSB芯片的层次式设计方法

提出了深亚微米下系统级芯片层次式版图设计的方法，并用该方法设计了HDTV信道解码芯片8VSB的版图。实例设计结果表明，该方法在节约面积、加速时序收敛方面效果明显，大大缩短了芯片设计周期。     

探针馈电圆柱共形微带天线阻抗特性的FDTD法分析

将圆柱坐标系下非分裂式理想匹配层吸收边界条件(UPML)引入到圆柱共形微带天线的全波分析中，并给出了其中的场量迭代方程，明显地减小了计算空间，简化了编程；提出了圆柱坐标系下考虑有限尺寸探针半径的新算法，使得计算结果更加精确；应用GPOF方法预估了时域晚时响应，使计算时间减少了70％～90％。本文给出的模型能够对任意多层圆柱共形结构的微带天线进行计算，因此对此类天线的CAD设计具有实际意义。     

Handover and Uplink Power Control Performance in the 3.84 Mcps TDD mode of UTRA Network

In this article we consider the performance of the 3.84 Mcpstime-division duplex (TDD) mode of UTRA (Universal TerrestrialRadio Access) network. We emphasize two of the radio resourcemanagement algorithms, handover and uplink power control, whoserole in the overall system performance is studied extensively.First, a handover algorithm used in WCDMA (Wideband Code DivisionMultiple Access) standard is considered in a TDD-mode operation.This gives rise to a careful setting of different handoverparameters, and the evaluation of the effects to the systemperformance. Secondly, the specified uplink power controlalgorithm is considered. Since it is based on several user-mademeasurements which may involve both random and systematic errors acareful study about the suitability of the power control scheme iscarried out.     

一种单相串联混合电力有源滤波器的研究

文中对串联混合电力滤波器抑制谐波的原理进行了分析。为了检测单项系统的谐波电流,提出一种基于虚拟三相法和瞬时无功理论的谐波检测方法,并且对串联滤波逆变器的直流侧电压的控制进行了讨论。仿真结果证明了其有效性。