ZnO量子点／SiO2复合器件的可调控电致发光研究

在不同浓度的SiO2乙醇溶液中制备了一系列ZnO量子点／SiO2复合材料,通过匀胶方法将其制备成复合薄膜器件。器件的电致发光（EL）随着SiO2浓度的增加逐渐蓝移。通过实验,探索了发生蓝移的机制。选取一种ZnO量子点／SiO2复合材料均匀混入不同质量的纯SiO2后,测试结果表明,该蓝移现象不是SiO2自身发光引起的。通...     

基于 DSP和S1D13305的EL屏显示控制系统设计

针对野外恶劣使用环境,设计了一种环境适应性强的显示控制系统。该系统采用基于DSP和S1D13305控制EL显示屏的设计方案,从软硬件两方面阐述了DSP和显示控制芯片之间的接口电路和设计方法,解决了显示控制芯片内部字库内容单一的问题,并给出了系统设置和显示控制芯片初始化程序,开发了显示驱动模块。经过实战考核和应用,该显示系统在野外恶劣环境中工作稳定,显示效果良好。该显示系统达到了预期效果。     

Analysis of alternating current driven electroluminescence in organic light emitting diodes: A comparative study

The alternating current (AC) responses of double-injection and double-insulated organic light-emitting diodes (OLEDs) were investigated and compared. To reveal the electroluminescent (EL) processes in these devices, the AC voltage and frequency dependence of the EL intensity and capacitive current were studied in the time domain with a focus on phase difference analysis. It was found that the voltage-dependent transit time and frequency-dependent carrier distribution were important for the AC-driven performance of the double-injection OLEDs. In contrast, although the double-insulated OLEDs shared some similarities with the double-injection OLEDs, they had some unique characteristics, which were the absence of resistive current and phase shift of EL profiles. It was revealed that the EL in the double-insulated OLEDs was driven by the displacement current generated by the ionization of the doped layers, which, however, formed space charge regions and undermined the EL emission. The space charge redistributed the electric field across the devices after the initiation of EL, making the EL maintain for a limited time interval. This effect was significant under low frequency and high AC voltage. Comparing the phase difference between both devices, it was indicated that the space charge effect was responsible for the observed EL phase shift and the asymmetric EL profiles at low frequency and high AC voltage in the double-insulated OLEDs. The proposed model was also of help to understand the EL saturation phenomena with AC frequency and voltage in those devices.     

Anomalous temperature-dependent behaviors of electroluminescence phenomena in disordered ITO/PEDOT/PF/Ca/Al polymer light-emitting diodes

In this study we systematically investigated the anomalous Berthelot-type optical property dependence of the electroluminescence (EL) that occurs in polymer light-emitting diode (PLED) structures. Devices were operated at 0.1 and 0.5 mA over a temperature range from 300 to 20 K. Initially, the emission intensity increased as the temperature decreased, until a maximum was reached at the turning-point temperature T_t. After this, the intensity decreased with further decrease of temperature down to 20 K. A smaller reduction in intensity was exhibited by the device with 0.5 mA, a larger one exhibited by the device with 0.1 mA. The strong electron-electron scattering arising from high excitation, high microcrystalline randomization and high hopping frequency led to the corresponding dominance of the Berthelot-type process by a large T_t. It can be seen in the Arrhenius plot of the integrated EL intensity that a smaller activation energy can be expected to facilitate the redistribution of the thermal carriers, overcoming the energy barrier and the large degradation of luminescence. This results in not only better than carrier confinement, but also enhances the quantum efficiency of PLED structures requiring lower excitation.     

Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm.     

晶硅太阳电池黑斑分析

p型单晶硅太阳电池在EL检测过程中,部分电池片出现黑斑现象.结合X射线能谱分析(EDS),对黑斑片与正常片进行对比分析,发现黑斑片电池与正常电池片大部分表面的成分相同,排除了镀膜及丝网印刷过程中产生黑斑的可能.利用X射线荧光光谱分析(XRF)测试了同一电池片的黑斑区域与正常区域,发现黑斑处Ca含量较大,并出现Sr、Ge和S等杂质元素.将6个档位的电池片制备成2 cm×2 cm的电池样片,利用光生诱导电流测量了每个电池的外量子效率(EQE).在460～1 000 nm波长范围内,同一电池片黑斑处与正常处的EQE相差较大,说明黑斑的出现与原生硅片缺陷无关,应归结于电池片生产过程中引入的杂质缺陷.给出了杂质引入的原因以及解决途径,从而显著减小了黑斑片产生的几率.     

Enhancement of electroluminescence intensity in poly(3-alkylthiophene) with different alkyl side-chain length by doping of fluorescent dye

Electroluminescent diodes utilizing poly(3-alkylthiophene) (PAT) containing fluorescent dyes have been fabricated and their unique enhancement of emission characteristics have been studied. Remarkable enhancement of the electroluminescence efficiency has been observed for diodes with PAT doped with oxadiazole derivative (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole; PBD) and perylene derivative (N,N′ - Bis(2,5 - di - tert - butylphenyl) - 3,4,9,10 - perylenedi- carboximide; BPPC). The mechanism of emission enhancement by doping of PBD into PAT has been discussed with different alkyl side-chain lengths. © 1997 John Wiley & Sons, Ltd.     

有机电致发光屏显示模块研究

通过对有机电致发光器件的结构以及发光机理的分析，介绍了一种以内藏式图形控制器T6963C为主控制芯片的0LED显示模块，并给出了该显示模块与单片机的接口以及软件控制流程。     

利用电致发光线的光学电压有效值传感器

利用电致发光(EL)线设计并实验研究了一种光学电压有效值传感器。所用EL线的主要材料为ZnS:Cu,在一定幅值的工频电压作用下,可产生中心波长约为525nm的可见光;将此EL用塑料光纤(POF)传输到光电探测器(PD),则PD的开路电压与被测电压有效值之间具有近似线性关系。对100～500V工频电压有效值进行了实验测量,其电压测量灵敏度约为10.8μV/V,非线性误差低于1.8%。实验测量了所用EL线的电致发光光谱、输入阻抗以及EL的温度特性。与以往基于Pockels电光效应的光学电压传感器不同的是,本文提出的电压传感器不需要工作光源,并具有结构简单、成本低等优点。     

半绝缘砷化镓的光淬灭对TSC的影响

实验研究了ＳＩ－ＧａＡｓ材料中的ＥＬ２能级光淬灭对ＴＳＣ谱的影响。ＥＬ２能级显著光淬灭后,ＴＳＣ谱发生了明显的变化。一些ＴＳＣ峰的高度明显降低甚至消失,在低温端ＴＳＣ谱出现一些新的峰。