K2O-ZnO-Al2O3-B2O3-SiO2系掺Cr3+透明莫来石微晶玻璃的研究

采用了X射线衍射、透射电镜和吸收光谱及荧光光谱技术研究了K2O－ZnO-Al2O3-B2O3－SiO2系掺Cr^3 玻璃的析晶性能和光谱。研究结果表明：在K2O－Al2O3-B2O3-SiO2系掺Cr^3 玻璃的基础上引入ZnO后，析晶性能明显改善；析晶温度降低，析出的纳米莫来石微晶均匀、规则；微晶玻璃的发光强度明显增强。     

A topological aspect of Sobolev mappings

Let be a connected open set, . We give a sufficient condition for a mapping , , to have the property that sgn is almost everywhere of one sign. Following the work of Müller, Spector, and Tang [MST], we give an application of our results to the theory of non-linear elasticity. Received: 13 October 2000 / Accepted: 23 January 2001 / Published online: 4 May 2001     

Backlund transformation and variable separation solutions for the generalized Nozhnik—Novikov—Veselov equation

Using the extended homogeneous balance method, the B?cklund transformation for a (2+1)-dimensional integrable model, the generalized Nizhnik－Novikov－Veselov (GNNV) equation, is first obtained. Also, making use of the B?cklund transformation, the GNNV equation is changed into three equations: linear, bilinear and trilinear form equations. Starting from these three equations, a rather general variable separation solution of the model is constructed. The abundant localized coherent structures of the model can be induced by the entrance of two variable-separated arbitrary functions.     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

Dislocations and flux pinning in YBa2Cu3O7

The dislocation structures of bulk textured and epitaxial thin film YBa₂Cu₃O₇ superconductors are examined. Correlations between increases in flux pinning and dislocation densities are noted. A model for flux pinning by individual dislocations is presented. This gives a treatment of strain induced effects and effects of normal state region interactions. It is shown that the values of pinning predicted are in line with experimental observations.     

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate. Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials. Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore, we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth.     

A new precipitate phase in Al-4wt. % Cu thin-film interconnects

We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation of electron diffraction intensities suggests that the basis structure is isomorphous with Al₂Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its implications for electromigration reliability are discussed.     

Thermal stability of poly(mono-n-alkylitaconates) and mono-n-alkylitaconate-co-vinylpyrrolidone copolymers I

Poly(monoitaconates) containing octyl, decyl and dodecyl groups and random monoalkylitaconate-co-vinylpyrrolidone copolymers were studied by thermogravimetric analysis. Copolymers of mono-n-octylitaconate (MOI), mono-n-decylitaconate (MDI), and mono-n-dodecylitaconate (MDoI), respectively, with N-vinyl-2-pyrrolidone (VP) of different compositions were studied by dynamic thermogravimetric analysis. The thermal stability of the copolymers depends on the structure of the monoitaconate comonomer and on the composition of the copolymer The kinetic analysis of the degradation data shows that the thermal decomposition of these copolymers can be described by several kinetic orders depending on the copolymer and on the composition. The relative thermal stability of the copolymers increases as the VP content increases and as the length of the side chain of the itaconate increases, following the same trend as the flexibility of the copolymers in solution.     

Enantioselective separations by capillary GC on derivatized cyclodextrins. Part 2: Determination of enantiomeric excess of some racemic 2,3-isopropylidene-1,2,3-cyclohexanetriol derivatives on permethyl α-, β-, and γ-cyclodextrins

Capillary GC on permethyl α-, β-, and γ-cyclodextrins has been applied to separate and quantify the enantiomers of some 2,3-iso-propylidene-1,2,3-cyclohexanetriol derivatives. Quantitative CGC data are compared to those obtained with chiral shift ¹H NMR.