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71.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
72.
73.
ZhaoYahong ZhangZhongpei WuWeiling 《电子科学学刊(英文版)》2003,20(3):177-182
Adaptive modulation and power allocation is introduced into the multicarrier DSCDMA system to improve the system performance and bandwidth efficiency.First,the system design appropriate for adaptive modulation and power allocation is given,then the algorithm of adaptive modulation and power allocation is applied.Simulation results demonstrate great performance improvement compared with the fixed modulated one. 相似文献
74.
75.
本文在简要回顾MIMO-STC[多输入、多输出(天线)-[空时编码]Turbo码(透平码或增强型反馈码)及OFDM(正交频分多路复用)技术特征基础上,重点论述MIMO-STC与Turbo码及OFDM级联传输技术,及其对下一代宽带无线(NGBW)演进发展具有的突出优势与战略重点性. 相似文献
76.
基于支持向量机的多类分类研究 总被引:1,自引:0,他引:1
现今流行的分类方法的重要基础是传统的统计学,前提是要有足够的样本,当样本数目有限时容易出现过学习的问题,导致分类效果不理想。引入支持向量机方法,它基于统计学习理论,采用了结构风险最小化原则代替经验风险最小化原则,较好的解决了小样本学习的问题;又由于采用了核函数思想,把非线性空间的问题转换到线性空间,降低了算法的复杂度。对其相关内容包括优化算法及多类分类问题的解决进行了研究,最后用一个实例说明了该方法的可行性和有效性。 相似文献
77.
OCT图像散斑的形成机理和清除方法 总被引:4,自引:1,他引:3
根据光相干层析成像(OCT)的光学和光电检测系统特点,结合现有的理论模型,分析了OCT成像和散斑形成机理。指出失去相干性的多次散射光部分会被滤波电路排除,散斑是由高散射组织相干长度之内的不同散射截面上的若干具有nπ光程差的相干散射光彼此叠加形成的。最后讨论了消除散斑的方法。 相似文献
78.
基于扩展分形和CFAR特征融合的SAR图像目标识别 总被引:3,自引:0,他引:3
研究了多信息融合技术在SAR图像目标识别中的应用。将扩展分形特征(Extended Fractal)与双参数恒虚警特征(Double Parameter CFAR)形成的多信息进行融合处理。运用Dempster-Shafer证据理论,在决策层对SAR图像中的像素进行识别分类。实验结果表明通过融合对像素分类的准确性明显好于单特征的检测结果,减少了虚警概率,提高了系统的识别能力。 相似文献
79.
提出一种视频点播系统传送数据的结构,结合单播与群播两种数据传送的方法,通过动态改变群播与单播的频道分配比例,让大部分的使用者无需等待即可开始观看影片,进而减少整体使用者的等待时间. 相似文献
80.
Woo‐Seok Cheong 《ETRI Journal》2003,25(6):503-509
Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating. 相似文献