Effect of iso-electronic dopants on the dislocation density of GaAs

The addition of 1% In to LEC GaAs has been reported to reduce the dislocation density in this material; similar data exists for Sb doping. Several effects have been inferred to explain these phenomena, the most prevailing one stating that the solid stoichiometry is affected by an as yet unknown mechanism. Similar postulations have been made to explain the growth of semi-insulating GaAs. A thermodynamic model is described, based on earlier work, that shows a broadening of the existence region of GaAs when In or Sb are added to GaAs. Comparing the solidus phase diagrams of In- or Sb-doped GaAs to undoped GaAs shows that addition of either one of these two iso-electronic dopants has a similar effect on the solid stoichiometry as adding more As to the melt. However, the increased pressure problems in LEC growth of GaAs, normally associated with adding As, are circumvented if instead In or Sb are added to the melt. From our calculations it is also shown that the addition of the iso-electronic dopants Al or P to GaAs would not result in the same effect on the solid stoichiometry. Published experimental evidence supports this and shows that no dislocation reduction and semi-insulating GaAs is obtained with the use of these dopants. The model described in this paper explains the postulation that iso-electronic doping is of critical significance in controlling the solid stoichiometry and thereby obtaining zero dislocation density LEC GaAs and semi-insulating GaAs.     

光子晶体及其自组装制备

自从理论计算指出金刚石结构具有完全光子带隙以来，三维光子晶体的理论研究和实验制作一直受到高度重视。光子晶体的制备方法总体上可分为两大类：微制作法和自组装法。前者适合于制备微波、远红外及近红外波段的光子晶体，后者制备近红外、可见或更短波段的光子晶体具有独特的优势。简述了光子晶体的概念和基本特征，并对三维光子晶体的自组装制备方法进行了综述。     

二维光子晶体透射特性的FDTD数值研究

把时域有限差分方法(FDTD)用于二维光子晶体透射特性研究,计算后得到多种情况下二维光子晶体的透射系数与入射光频率的关系曲线,结果表明,禁带的宽度和位置与组成二维光子晶体的晶格结构和介电常数等因素有关,介质柱半径变大则禁带变宽且禁带的中心频率变大,介质柱的介电常数与本底材料的介电常数相差越显著越有利于形成禁带,降低结构的对称性,禁带宽度增大.     

液晶红外传感器系统

液晶红外传感器系统包括液晶斩波器,驱动电路、液晶聚合物热电元件、探测器、放大器和显示器等。液晶斩波器还可应用于温差电堆、热敏电阻测辐射热仪、红外摄象机等。热电液晶聚合物还可用作压电、驻极体、非线性光学元件等。     

一维声子晶体杆状结构纵向振动带隙特性

基于传递矩阵法,以一维声子晶体杆状结构纵向振动带隙特性为研究对象,应用MATLAB编程,数值模拟了A为金、铜、铝和碳,B为环氧树脂时纵向振动带隙特性,得到铜与与环氧树脂构成一维声子晶体时,形成最大振动带隙宽度3．39KHz ,其中金能够形成较多的带隙区间。数值模拟了A为铜,B为硅橡胶、有机玻璃1、有机玻璃2和塑料时,得到A为铜,B为塑料时形成最大带隙在0．51KHz -7．06KHz ,带隙宽度为6．55KHz ,这两种组合形成了最大带隙宽度。A为铜,B为有机玻璃1时形成较多的带隙结构。研究结论为一维声子晶体器件制作提供参考。     

半导体光子晶体激光器的研究进展

半导体光子晶体激光器已成为当今世界范围内的一个研究热点.简述了光子晶体的物理特性对优化半导体激光器的贡献,介绍了几种类型光子晶体激光器,详细阐述了器件的工作原理,并展望了光子晶体激光器的潜在应用前景.     

Brewster-angle cut doubled light shutter

New types of doubled electro-optic, and low voltage controlled doubled elasto-optic light shutters containing Brewster-angle cut crystals instead of separate polarizers are investigated. Light transmission characteristics show that the devices without polarizers can give a modulation depth of about 20%.     

Nanohybrid Materials with Tunable Birefringence via Cation Exchange in Polymer Films

In this work, a nanohybrid material based on a freestanding polymeric liquid crystal network capable of postmodification via cation exchange to tune birefringence is proposed. The smectic liquid crystal films can be infiltrated with a variety of cations, thereby changing the refractive indices (n_e and n_o) and the effective birefringence (Δn) of the nanohybrid material, with reversible cation infiltration occurring within minutes. Birefringence could be tuned between values of 0.06 and 0.19, depending on the cation infiltrated into the network. Upon infiltration, a decrease in the smectic layer spacing is found with layer contraction independent of the induced change in birefringence. Potential applications are in the field of specialty optical devices, such as flexible, retunable reflective filters.     

二维Kagome格子光子晶体禁带的数值模拟

采用平面波展开法模拟计算了由空气背景中的介质柱构成的二维Kagome格子光子晶体的能带结构，得到了使完全光子禁带最大化的结构参量．计算结果表明：由圆形、正六边形和正四边形三种不同形状锗介质柱构成的Kagome格子光子晶体都出现了完全光子禁带，最大禁带分别为△=0．014(ωa／2πc)、△=0．013(ωa／2πc)、△=0．011(ωa／2πc)．发现由圆形和正六边形两种介质柱构成的Kagome格子光子晶体在填充比连续变化的较大的范围内都有宽度较为稳定的完全禁带，且它们具有非常相似的能带结构．     

Helium blistering of niobium: Large swelling measurements supporting the gas pressure model

Crystal potentials are usually obtained through a combination of theoretical calculation and the fitting of crystal properties. Because of thermal expansion of the crystal, the equilibrium condition is not satisfied at all temperatures unless the crystal potential is made temperature-dependent. A quasiharmonic potential that satisfies the equilibrium condition at all temperatures is derived from KC1 and used to calculate temperature-dependent defect energies (at constant volume). Other thermodynamic defect parameters are then derived by combining these results with the experimental Gibbs energies. The temperature-dependence of these parameters is displayed.