单量子阱InGaN/GaN势垒高度与LED光电性能关系研究

通过对InxGa1-xN掺杂不同组份的In来改变InxGa1-xN的禁带宽度,从而改变量子阱势垒高度,并研究其与发光二极管光电性能、效率下降之间的关系。通过仿真模拟实验研究了不同量子阱势垒高度与InGaN /GaN量子阱发光二极管的功率光谱密度、内量子效率、发光功率及复合率之间的关系。分析结果表明：(1) In含量与发光二极管的光电性能并非成线性关系。(2) 在电流密度较低时,In组份越小,光谱密度峰值越大,发光功率越大。(3) 在电流密度较大时,In组份越大,光谱密度峰值越大,发光功率越大。(4) 光谱蓝移与电流密度大小紧密相关,电流密度大的蓝移程度大,反之越小。因此,应该根据不同的电流密度来选择In组份的大小,从而提高发光效率。     

面向可见光通信的硅基InGaN/GaN多量子阱多口分路器光子集成芯片

为研究面向可见光通信的多功能光子集成芯片,实现可见光信号发射、探测、传输和功率分配的一体化的复合功能,该文提出一种基于硅基InGaN/GaN多量子阱材料的微型发光二极管(LED)多口分路器结构的光子集成芯片,对集成芯片进行了形貌、光电特性和可见光通信测试等多方面表征,实现了对可见光信号的有效传输和不同比例的多口功率分路,并对分路器不同端口的出射光强进行量化处理,最后,利用信号发生器在微型LED光源发射端加载300 kHz的矩形波电信号,收集分路器末端发射的调制可见光信号,输入/接收信号的波形变化趋势一致,说明该光子集成芯片可实现有效的可见光通信。该研究的主要目的是尝试性将可见光波段的光源和光电探测器集成在氮化物晶圆上,为可见光通信的全光网络的可见光信号片上集成式处理提供新的研究思路和方案,为发展面向可见光通信网络需求的复合功能光子集成芯片终端提供了更多可能性。     

1.3μm wide bandwidth semiconductor laser module

We have fabricated high speed 1.3цm InGaAsP/InP laser module with a CW 3-dB modulation bandwidth of 4 GHz under direct modulation and a threshold current less than 40 mA at room temperature.In this paper ,the design,fabrication techniques and microwave package of module are descuibed in detail,and the microwave and optoelectronic performances are discussed.     

A 3D indoor positioning system based on common visible LEDs

We propose a realistic 3D positioning system for indoor navigation that exploits visible Light Emitting Diodes (LEDs), placed on the ceiling. A unique frequency tone is assigned to each lamp and modulates its intensity in periodic time slots. The Time Difference of Arrival (TDOA) is measured without the need of a synchronization system between the sources and the receiver, then it is used to accurately estimate the receiver position. We first describe the theoretical approach, then propose the model and characterize the possible sources of noise. Finally, we demonstrate the proof-of-concept of the proposed system by simulation of lightwave propagation. Namely, we assess its performance by using Montecarlo simulations in a common room and estimate the impact of the different implementation parameters on the accuracy of the proposed solution. We find that, in realistic conditions, the technique allows for centimeter precision. Pushing the device requirements, the precision can be further increased to a sub-centimeter accuracy.     

LED lighting efficacy: Status and directions

A monumental shift from conventional lighting technologies (incandescent, fluorescent, high intensity discharge) to LED lighting is currently transpiring. The primary driver for this shift has been energy efficiency and associated cost savings. LED lighting is now more efficacious than any of the conventional lighting technologies with room to still improve. Near term, phosphor-converted LED packages have the potential for efficacy improvement between 160 lm/W (now) to 255 lm/W. Longer term, color-mixed LED packages have the potential for efficacy levels conceivably as high as 330 lm/W, though reaching these performance levels requires breakthroughs in green and amber LED efficiency. LED package efficacy sets the upper limit to luminaire efficacy, with the luminaire containing its own efficacy loss channels. In this paper, based on analyses performed through the U.S. Department of Energy Solid State Lighting Program, various LED and luminaire loss channels are elucidated, and critical areas for improvement identified. Beyond massive energy savings, LED technology enables a host of new applications and added value not possible or economical with previous lighting technologies. These include connected lighting, lighting tailored for human physiological responses, horticultural lighting, and ecologically conscious lighting. None of these new applications would be viable if not for the high efficacies that have been achieved, and are themselves just the beginning of what LED lighting can do.     

1.3μm超辐射发光二极管制作和实验

通过在激光二极管端面底高减反膜，实现了辐射发光，制成了超辐射发光二极管，它在较宽的驱动电流范围（３３￣６８ｍＡ）内均呈现超辐射发光特性，对超辐射发光二极管特性进行了研究，实验表明，它的发射谱很宽，在输出功率达１ｍＷ情况下，谱线宽度仍达１５ｎｍ。     

半导体光源频率噪声对平均孤子传输容量的影响

分析了半导体光源频率噪声以及光放大器噪声对平均孤子传输系统容量产生的共同影响，前者将使系统的通信容量进一步降低，并据此解释了一个系统试验结果，同时提出了其改善措施。     

Determination of 15 polycyclic aromatic hydrocarbons in lotus root by QuEChERS-high performance liquid chromatographyEI北大核心CSCD

A method for the determination of 15 priority polycyclic aromatic hydrocarbonsPAHsin lotus root by QuEChERS technique combined with high performance liquid chromatography HPLC was established. Lotus root samples were extracted by acetonitrilefiltrated after salting out and purified by C18 and primary secondary aminePSAsorbent. Then the 15 kinds of PAHs were analyzed by HPLC with diode array detector or fluorescence detector after being separated by Athena PAHs column. When the 15 kinds of PAHs were analyzed by diode array detectorthe linear relationships were good between 0.02 and 1.0 mg/L with the correlation coefficients above 0.99 for all the 15 kinds of PAHs. The limits of quantitation were 0.02 mg/kg for allthe average recoveries of the 15 kinds of PAHs were 84.7%-117.1%and the relative standard deviations were 0.73%-11%. When the 14 kinds of PAHsexcept for acenaphthyleneanalyzed by fluorescence detectorthe linear relationships were good between 0.001 and 1.0 mg/L with the correlation coefficients above 0.99 for all the 14 kinds of PAHs except for acenaphthylene. The limits of quantitation were 5 μµg/kg for allthe average recoveries of the 14 kinds of PAHsexcept for acenaphthylenewere 69.1%-111.8%and the relative standard deviations were 0.18%-9.7%. Diode array detector and fluorescence detector are complementary. Diode array detector can analyze all the PAHsbut its sensitivity is relatively low. Fluorescence detector is not suitable for acenaphthylene with weak fluorescence signalbut its sensitivity is much higher than that of diode array detector. This method is suitable for simultaneously and quickly determination of 15 kinds of PAHs in lotus root. © 2022, Youke Publishing Co.,Ltd. All rights reserved.     

Regulating Perovskite Crystallization through Interfacial Engineering Using a Zwitterionic Additive Potassium Sulfamate for Efficient Pure-Blue Light-Emitting Diodes

Quasi-two-dimensional (quasi-2D) perovskites are emerging as efficient emitters in blue perovskite light-emitting diodes (PeLEDs), while the imbalanced crystallization of the halide-mixed system limits further improvements in device performance. The rapid crystallization caused by Cl doping produces massive defects at the interface, leading to aggravated non-radiative recombination. Meanwhile, unmanageable perovskite crystallization is prone to facilitate the formation of nonuniform low-dimensional phases, which results in energy loss during the exciton transfer process. Here, we propose a multifunctional interface engineering for nucleation and phase regulation by incorporating the zwitterionic additive potassium sulfamate into the hole transport layer. By using potassium ions (K⁺) as heterogeneous nucleation seeds, finely controlled growth of interfacial K⁺-guided grains is achieved. The sulfamate ions can simultaneously regulate the phase distribution and passivate defects through coordination interactions with undercoordinated lead atoms. Consequently, such synergistic effect constructs quasi-2D blue perovskite films with smooth energy landscape and reduced trap states, leading to pure-blue PeLEDs with a maximum external quantum efficiency (EQE) of 17.32 %, spectrally stable emission at 478 nm and the prolonged operational lifetime. This work provides a unique guide to comprehensively regulate the halide-mixed blue perovskite crystallization by manipulating the characteristics of grain-growth substrate.     

Narrowband Near-Infrared Multiple-Resonance Thermally Activated Delayed Fluorescence Emitters towards High-Performance and Stable Organic Light-Emitting Diodes

Multiple-resonance thermally activated delayed fluorescence (MR-TADF) materials are highly coveted for their high efficiency and narrowband emission in organic light-emitting diodes (OLEDs). Nevertheless, the development of near-infrared (NIR) MR-TADF emitters remains a formidable challenge. In this study, we design two new NIR MR-TADF emitters, PXZ−R−BN and BCz−R−BN, by embedding 10H-phenoxazine (PXZ) and 7H-dibenzo[c,g]carbazole (BCz) fragments to increase the electron-donating ability or extending π-conjugation on the framework of para-boron fusing polycyclic aromatic hydrocarbons (PAHs). Both compounds emit in the NIR region, with a full-width at half-maximum (FWHM) of 49 nm (0.13 eV) for PXZ−R−BN and 43 nm (0.11 eV) for BCz−R−BN in toluene. To sensitize the two NIR MR-TADF emitters in OLEDs, a new platinum complex, Pt-1, is designed as a sensitizer. The PXZ−R−BN-based sensitized OLEDs achieve a maximum external quantum efficiency (EQE_max) of nearly 30 % with an emission band at 693 nm, and exceptional long operational stability with an LT₉₇ (time to 97 % of the initial luminance) value of 39084 h at an initial radiance of 1000 mW sr⁻¹ m⁻². The BCz−R−BN-based OLEDs reach EQE_max values of 24.2 % with an emission band at 713 nm, which sets a record value for NIR OLEDs with emission bands beyond 700 nm.