Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing

The uniformity of deep levels in semi-insulating InP wafers, which have been obtained by multiple-step wafer annealing under phosphorus vapor pressure, was studied using the thermally stimulated current (TSC) and photoluminescence (PL) methods. Only three traps related to Fe, T₀ (ionization energy E_i=0.19 eV), T₁ (0.25 eV), and T₂ (0.33 eV), probably forming complex defects, were observed in the wafer and they exhibited a relatively uniform distribution. PL spectra relating to phosphorus vacancies observed in some regions of the wafer are correlated with a small TSC signal having an ionization energy of 0.43 eV.     

An EPR study of defects induced in 6H-SiC by ion implantation

Crystalline (0001) plane wafers of n-type 6H-SiC have been implanted at room temperature with 200 keV Ge⁺ ions in the dose range 10¹² to 10¹⁵ cm⁻². Electron paramagnetic resonance (EPR) measurements have been made on these samples both before and after annealing them at temperatures in the range room temperature to 1500°C. The as-implanted samples have a single isotropic and asymmetric line EPR spectrum whose width, ΔB_pp, increases with ion dose before falling when a buried continuous amorphous layer is produced. This increase is interpreted in terms of the change in the relative intensity of a line with g = 2.0028 ± 0.0002, ΔB_pp = 0.4 mT associated primarily with carbon dangling bonds in a-SiC and a line with g in the range 2.0033 to 2.0039 of uncertain origin. The variation with anneal temperature of the populations of these defects is reported.     

C49 defect influence on the C49–C54 transition

The C49–C54 transformation has been studied in TiSi₂ thin films having different concentration of defects. The defect concentration in the C49 phase has been varied using different thermal processes in the 460–540 °C temperature range; in fact, the defect concentration decreases with increasing the temperature and/or the duration of the thermal process as attested by the large variation of the silicide residual resistivity at 4 K. The kinetics of the transformation at 650 °C has been followed by in situ resistivity measurements and, for each sample, the transition time decreases as the defect concentration in the metastable phase decreases.     

DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes

The presence of hole traps has been studied by deep level transient spectroscopy (DLTS) characterization of low carrier densityp-type GaAs grown by MBE on p⁺-GaAs substrates using Al and Co Schottky contacts. The results obtained indicate the presence of several hole traps with energy levels of between 0.06 and 0.65 eV above the valence band in concentrations up to 2 × 10¹²/cm³. Some of these defects,e.g. Cu, are ascribed to system-, source-or substrate-related impurities, but the origin of several other defects is unknown.     

Effect of interface states associated with transitional nanophase precipitates in the enhancement of red emission from SrAl12O19:Pr by Ti incorporation

SrAl₁₂O₁₉:Pr³⁺, Ti⁴⁺ phosphor suitable for field emission displays is prepared by the wet chemical gel-carbonate method and the mechanism of enhancement in red photoluminescence (PL) intensity with Ti⁴⁺ therein has been investigated. The PL spectra of Pr³⁺ show both ¹D₂-³H₄ and ³P₀-³H₆ emission in the red region with very weak intensity when excited at 355 nm. The emission intensity has increased by about 100 times at room temperature in the compositional range SrAl_12−xTi_xO_19+x/2:Pr³⁺, with 0.1≤x≤0.3 in comparison to Ti-free SrAl₁₂O₁₉:Pr³⁺. TEM investigations show the presence of exsolved nanophase of SrAl₈Ti₃O₁₉, the precipitation of which is preceded by the presence of defect centers at the interfacial regions between the semicoherent transient phase and the parent SrAl₁₂O₁₉ matrix. The presence of transitional nanophase and the associated defects modify the excitation-emission process by way of formation of electronic sub-levels at lower energy (3.5 eV) than the band gap of SrAl₁₂O₁₉ (∼7 eV) followed by non-resonance energy transfer to Pr³⁺ level, leading to magnetic-dipole related red emission with enhanced intensity. The PL intensity of Pr³⁺ decreases at high Ti⁴⁺ concentrations (x>0.3) due to higher extent of segregation of non-emissive SrAl₈Ti₃O₁₉:Pr³⁺ phase.     

Band structure calculations on the layered compounds FeGa2S4 and NiGa2S4

For the compounds FeGa₂S₄ and NiGa₂S₄ band structure calculations have been performed by the ab initio plane wave pseudo-potential method. The valence charge density distribution points to an ionic type of chemical bonding between the transition metal atoms and the ligand atoms. Two models for the pseudo-potentials are used to calculate the band structures: (a) only s and p electrons and (b) also the d-shells of the transition metal atoms are included in the pseudo-potentials. The differences between these two cases of band structures are discussed. Energy gap formation peculiarities are analysed for both crystals. Zak's elementary energy band concept is demonstrated for the energy spectra of the considered crystals.     

Elastic charge density representation of the interaction via the nematic director field

The interaction between particle-like sources of the nematic director distortions (e.g., colloids, point defects, macromolecules in nematic emulsions) allows for a useful analogy with the electrostatic multipole interaction between charged bodies. In this paper we develop this analogy to the level corresponding to the charge density and consider the general status of the pairwise approach to the nematic emulsions with finite-size colloids. It is shown that the elastic analog of the surface electric charge density is represented by the two transverse director components on the surface imposing the director distortions. The elastic multipoles of a particle are expressed as integrals over the charge density distribution on this surface. Because of the difference between the scalar electrostatics and vector nematostatics, the number of elastic multipoles of each order is doubled compared to that in the electrostatics: there are two elastic charges, two vectors of dipole moments, two quadrupolar tensors, and so on. The two-component elastic charge is expressed via the vector of external mechanical torque applied on the particle. As a result, the elastic Coulomb-like coupling between two particles is found to be proportional to the scalar product of the two external torques and does not directly depend on the particles' form and anchoring. The real-space Green function method is used to develop the pairwise approach to nematic emulsions and determine its form and restrictions. The pairwise potentials are obtained in the familiar form, but, in contrast to the electrostatics, they describe the interaction between pairs (dyads) of the elastic multipole moments. The multipole moments are shown to be uniquely determined by the single-particle director field, unperturbed by other particles. The pairwise approximation is applicable only in the leading order in the small ratio particle size-to-interparticle distance as the next order contains irreducible three-body terms.     

Experimental and theoretical investigation of defects at (1 0 0) Si1−xGex/oxide interfaces

The identification of a nontrigonal Ge dangling bond at SiO₂/Si_1−xGe_x/SiO₂ heterostructures and its electrical activity are discussed, both from experimental and theoretical points of view. This dangling bond is observed from multifrequency electron-spin resonance experiments performed at 4.2 K, for typical Ge concentrations in the range 0.4 ≤ x ≤ 0.85. The electrical activity of this defect is revealed from capacitance-voltage characteristics measured at 300 and 77 K, and is found to behave like an acceptor defect. First-principles calculations of the electronic properties of this Ge dangling bond indicate that its energy level approaches the valence band edge of the Si_1−xGe_x layer as the Ge content increases, confirming its acceptor-like nature.     

Adsorption dynamics of O2 on Cu(1 0 0)

We have studied the adsorption of O₂ on the Cu(1 0 0) surface using both static potential energy surface (PES) calculations and ab initio molecular dynamics. The dynamical calculations complement the PES results, revealing steering effects which could not be predicted based on the static calculations only. We study the effect of oxidation and Ag doping on O₂ adsorption dynamics. The results are discussed in the light of recent molecular beam experiments.